Diodes Incorporated BAT54WSQ-7-F

Overview

BAT54WSQ-7-F from Diodes Incorporated is an AEC-Q101 qualified surface-mount Schottky barrier diode in SOD323 package, rated for 30 V peak reverse voltage, 100 mA average forward current, and 1000 mV max forward voltage at 100 mA. It delivers ultra-fast 5.0 ns reverse recovery time and 2.0 µA max reverse leakage at 25 V, enabling reverse polarity protection and freewheeling in compact automotive power rails.

For engineers reviewing the BAT54WSQ-7-F datasheet, BAT54WSQ-7-F pinout, BAT54WSQ-7-F application, or BAT54WSQ-7-F equivalent, key selection criteria include its low VF at low IF (240 mV @ 0.1 mA), 10 pF junction capacitance at 1 V, thermal resistance of 625 °C/W, and IATF 16949-certified manufacturing for automotive-grade reliability.

Technical Context

This Schottky diode uses a planar epitaxial construction with PN junction guard ring to suppress ESD transients and improve ruggedness. Its low forward voltage drop and minimal stored charge enable efficient clamping and flyback energy dissipation in DC-DC converter outputs and battery input stages.

The device operates across –65°C to +150°C, with power derating beginning above +25°C ambient per its 200 mW absolute maximum rating. Its 10 pF capacitance at 1 V reverse bias supports high-frequency signal routing and RF decoupling in mixed-signal PCBs.

Key Specifications

Pinout & Package

Package: SOD323 - ultra-small plastic surface-mount package (1.30 mm × 1.70 mm × 0.95 mm), moisture sensitivity level 1, cathode band marked on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54SWT and NSR0230P2T5G, BAT54WSQ-7-F uniquely balances automotive qualification, ultra-low leakage, and proven board-level reliability in SOD323-making it optimal for safety-critical 12 V input protection where long-term parametric stability matters more than marginal VF reduction.

Availability

BAT54WSQ-7-F is available at Aetrix Electronics and suitable for automotive body control modules, USB-C port protection circuits, and industrial sensor node power rails requiring stable component supply and full AEC-Q101 compliance.

Supply support for BAT54WSQ-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAT54WSQ-7-F belongs to Diodes' automotive-qualified Schottky diode product line, engineered specifically for reverse polarity protection and freewheeling in harsh-environment 12 V/24 V systems where reliability, low leakage, and rapid switching are mandatory.

FAQ

Is BAT54WSQ-7-F pin-compatible with BAT54WS-7-F?

Yes - both share identical SOD323 package dimensions, anode/cathode terminal layout, and marking orientation. The "Q" suffix denotes AEC-Q101 qualification and PPAP capability; electrical specs and mechanical form are fully interchangeable. No PCB redesign is needed when upgrading from BAT54WS-7-F to BAT54WSQ-7-F.

What is the maximum continuous forward current at +85°C ambient?

Per the power derating curve (Figure 5), at +85°C ambient, the allowable power dissipation drops to ~120 mW. With VF ≈ 400 mV at 100 mA, the practical continuous forward current is limited to approximately 300 mA × (120 mW / 200 mW) = 180 mA - but the absolute maximum IO rating remains 100 mA per datasheet definition due to thermal runaway constraints on FR-4.

Does BAT54WSQ-7-F require special PCB layout for ESD robustness?

No special layout beyond standard SOD323 pad recommendations is required. Its integrated PN guard ring provides inherent ESD protection up to 8 kV HBM. However, placing the cathode trace directly to a solid ground plane (not via-stitched) and minimizing anode loop area reduces inductive kick during fast transients, preserving its 5 ns tRR advantage in real-world layouts.

Can BAT54WSQ-7-F be used in AC signal rectification at 1 MHz?

Yes - with 5.0 ns reverse recovery time and only 10 pF junction capacitance at 1 V, it supports clean half-wave rectification up to at least 50 MHz. At 1 MHz, forward conduction losses remain low (<1000 mV at 100 mA), and reverse recovery distortion is negligible. Ensure VR does not exceed 21 V RMS (30 V peak) and average current stays within 100 mA.