Infineon Technologies BAT6202VH6327XTSA1

Overview

BAT6202VH6327XTSA1 from Infineon Technologies is a silicon Schottky diode optimized for RF detector and mixer applications up to 1 GHz, featuring 40 V reverse voltage rating, 0.58 V typical forward voltage at 2 mA, 0.35 pF typical junction capacitance at 0 V, 225 kΩ typical differential resistance at 0 V/10 kHz, and housed in SOT-23 (SC-59) package with single-diode configuration.

For engineers reviewing the BAT6202VH6327XTSA1 datasheet, BAT6202VH6327XTSA1 pinout, BAT6202VH6327XTSA1 application, or BAT6202VH6327XTSA1 equivalent, key selection criteria include low-barrier RF performance, tight forward voltage matching (<20 mV), ESD-sensitive handling requirements, and thermal resistance of 410 K/W (junction-to-soldering point).

Technical Context

This Schottky diode employs a low-barrier metal-semiconductor junction enabling high-frequency detection with minimal series resistance and ultra-low junction capacitance. Its design targets zero-bias or low-bias operation in RF signal paths, where nonlinear conduction characteristics are leveraged for envelope detection and frequency mixing.

The device operates within a junction temperature range of –55 °C to 150 °C and supports DC forward currents up to 20 mA with 100 mW total power dissipation at specified thermal limits. Reverse leakage remains ≤10 µA at 40 V, ensuring stable detector offset behavior across temperature.

Key Specifications

Pinout & Package

Package: SOT-23 (SC-59), surface-mount, plastic, 3-pin, single-diode configuration. Cathode marked by band on package top.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF detector applications.

Compared with BAR63-03W and SKY13350-374LF, BAT6202VH6327XTSA1 delivers superior high-frequency response (lower CT) and zero-bias usability, making it optimal for compact, battery-constrained RF detectors where layout simplicity and GHz-range fidelity are critical.

Availability

BAT6202VH6327XTSA1 is available at Aetrix Electronics and suitable for wireless remote keyless entry (RKE), GSM/GPRS front-end detectors, ISM band sensor transmitters, and UWB pulse energy detection requiring stable component supply and traceable sourcing.

Supply support for BAT6202VH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, industrial, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

BAT6202VH6327XTSA1 belongs to Infineon's BAT62 family of low-barrier Schottky diodes engineered specifically for high-frequency detector, mixer, and sampling applications in sub-1 GHz to 3 GHz wireless systems.

FAQ

Is BAT6202VH6327XTSA1 suitable for zero-bias operation?

Yes. The low-barrier Schottky structure and 0.58 V typical forward voltage at 2 mA enable reliable zero-bias RF detection. Measured differential resistance of 225 kΩ at 0 V confirms effective small-signal rectification without DC bias, validated in 900 MHz envelope detection circuits per Infineon Application Note AN245.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C. At ambient temperature of 25 °C and 20 mA DC forward current, junction temperature rise is limited to 410 K/W × 100 mW = 41 K, resulting in ~66 °C junction temperature - well within safe operating range per thermal characterization data in Rev. 2.1 datasheet.

Does this diode require special PCB layout considerations for RF performance?

Yes. To preserve sub-0.4 pF junction capacitance, minimize pad area on both anode and cathode traces, use ground cutouts beneath the SOT-23 body, and keep RF trace lengths under 2 mm. Infineon recommends 0.25 mm trace width with 0.3 mm spacing to adjacent ground for 50 Ω microstrip at 1 GHz.

Can BAT6202VH6327XTSA1 replace BAT62-02W in existing designs?

Yes, with identical pinout, electrical specs, and thermal performance. BAT6202VH6327XTSA1 is the tape-and-reel variant of BAT62-02W (same SOT-23 package, 410 K/W RthJS, 0.35 pF CT). No layout or schematic changes are needed; only reel packaging and ordering code differ per Infineon's part numbering guide.