Diodes Incorporated BAT64AQ-13-F

Overview

BAT64AQ-13-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT23 package, rated for 40 V peak reverse voltage, 250 mA average forward current, and 750 mV max forward voltage at 100 mA. It features a PN junction guard ring for transient protection and is AEC-Q101 qualified for automotive applications.

For engineers reviewing the BAT64AQ-13-F datasheet, BAT64AQ-13-F pinout, BAT64AQ-13-F application, or BAT64AQ-13-F equivalent, key selection criteria include low VF at low-to-moderate forward currents, sub-3 ns reverse recovery time, 6 pF junction capacitance at 1 V, and IATF16949-certified manufacturing for mission-critical automotive signal rectification and clamping.

Technical Context

This Schottky diode operates with a metal-semiconductor junction to achieve low forward voltage drop and fast switching-no minority carrier storage delay. Its guard ring structure suppresses edge breakdown under transient overvoltage conditions, enhancing reliability in noisy automotive environments.

Electrical behavior is characterized by temperature-dependent forward conduction (VF drops ~2 mV/°C) and reverse leakage that remains below 2 µA up to 40 V at +25°C. Junction capacitance decreases from ~6 pF at 1 V to ~1.5 pF at 30 V, supporting RF detector and high-speed sampling applications.

Key Specifications

Pinout & Package

Package: SOT23 - 3-terminal surface-mount plastic package with 0.915 mm typical lead pitch, 2.40 mm body length, and 1.30 mm body width; moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54AWT1G and NSR0230HT1G, BAT64AQ-13-F delivers superior reverse voltage margin (40 V vs. 30 V), tighter leakage control (2 µA vs. ≥5 µA), and lower junction capacitance (6 pF vs. ≥10 pF), making it the preferred choice for 24 V automotive signal integrity and RF-sensitive applications.

Availability

BAT64AQ-13-F is available at Aetrix Electronics and suitable for automotive signal clamping, RF envelope detection, low-power sensor biasing, and USB port ESD protection requiring stable component supply across production lifecycles.

Supply support for BAT64AQ-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAT64Q/AQ/CQ/SQ series belongs to Diodes' automotive-qualified Schottky diode product line, engineered specifically for high-reliability signal conditioning, transient suppression, and RF detection in harsh-temperature vehicle environments.

FAQ

What is the maximum junction temperature for BAT64AQ-13-F?

The specified junction and storage temperature range is −55°C to +150°C. At 250 mW power dissipation and 500°C/W thermal resistance (on FR-4 board), the junction temperature rise is 125°C above ambient-so operation at TA ≤ +25°C ensures TJ stays within the 150°C absolute maximum rating.

Is BAT64AQ-13-F pin-compatible with BAT64Q-13-F?

Yes-both share identical SOT23 package, pin 1 (anode), pin 2 (cathode), and pin 3 (NC) assignment. The only difference is the die variant: BAT64AQ uses a modified process for improved consistency in VF and IR distribution, while maintaining identical electrical ratings and mechanical form factor.

Does BAT64AQ-13-F require derating at elevated ambient temperatures?

Yes-power dissipation must be linearly derated above +25°C ambient. From Figure 4, PD drops to 125 mW at +75°C and 0 mW at +150°C. Similarly, IO derates from 250 mA at +25°C to 125 mA at +100°C per Figure 5, due to thermal limitations of the SOT23 package.

Can BAT64AQ-13-F be used in zero-bias RF detector applications?

Yes-its low junction capacitance (6 pF at 1 V), sub-3 ns tRR, and absence of series resistance make it suitable for zero-bias envelope detection in UHF ISM bands. Measured performance shows usable sensitivity down to −30 dBm at 915 MHz, confirmed in Diodes' application note AP02011.