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Diodes Incorporated BAT64CQ-7-F

Part No.:
BAT64CQ-7-F
Manufacturer:
Diodes Incorporated
Category:
Diode Arrays
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAT64CQ-7-F.pdf
Description:
DIODE ARR SCHOT 40V 250MA SOT233
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,760

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Product details

Overview

BAT64CQ-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT23 package, rated for 40 V peak reverse voltage, 250 mA average forward current, and 0.75 V max forward voltage at 100 mA. It features a PN junction guard ring for transient protection and is AEC-Q101 qualified for automotive power rail clamping and ESD-sensitive signal path protection.

For engineers reviewing the BAT64CQ-7-F datasheet, BAT64CQ-7-F pinout, BAT64CQ-7-F application, or BAT64CQ-7-F equivalent, key selection criteria include low VF at low IF (350 mV @ 1 mA), fast 3.0 ns reverse recovery time, 6.0 pF junction capacitance at 1 V, AEC-Q101 qualification, and SOT23 thermal resistance of 500 °C/W on FR-4.

Technical Context

This Schottky diode uses a planar epitaxial structure with integrated PN guard ring to suppress edge breakdown and improve surge robustness under repetitive transients. Its low forward voltage enables efficient voltage clamping in 3.3 V/5 V supply rails without excessive conduction loss.

The device operates across –55 °C to +150 °C, with thermal derating beginning at 25 °C (250 mW max at TA = 25 °C, linearly reduced to zero at 150 °C). Junction-to-ambient thermal resistance is specified at 500 °C/W under standard FR-4 mounting per Diodes' recommended pad layout.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM40 V - Maximum non-repetitive reverse blocking voltage before breakdown; sets clamp threshold in overvoltage protection circuits
IO250 mA - Continuous DC forward current rating; defines maximum steady-state load current handling capability
VF Max0.75 V @ 100 mA - Upper limit of forward drop; determines conduction loss and self-heating at rated load
tRR3.0 ns - Measured reverse recovery time at IF = IR = 10 mA; enables high-frequency switching in RF detector and sampling applications
CT6.0 pF @ VR = 1 V, f = 1 MHz - Junction capacitance value; impacts bandwidth and signal integrity in high-speed signal routing
IR Max2.0 µA @ VR = 40 V - Maximum leakage under full-rated reverse bias; critical for low-power standby and battery-backed circuits
TJ Range–55 °C to +150 °C - Operational junction temperature window; supports under-hood automotive and industrial ambient conditions

Pinout & Package

Package: SOT23 - Surface-mount plastic package with three terminals, 0.008 g mass, UL 94V-0 rated molding compound, and matte tin-plated Alloy 42 leadframe.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)Forward current entry pointConnected to higher-potential node in clamping or rectification path; polarity marked by cathode band on package top view
Cathode (Pin 2)Forward current exit / reverse blocking terminalTypically tied to ground or lower-potential rail; forms low-impedance discharge path during transient events
No-Connect (Pin 3)Internal die attach flag / thermal slugNot electrically connected; serves mechanical anchoring and minor thermal conduction to PCB copper in optimized layouts

Key Features

FeatureDesign Value
Low turn-on voltage350 mV @ 1 mA - Enables reliable activation in low-voltage logic-level detection and biasing circuits
Fast switching speed3.0 ns tRR - Supports >100 MHz RF envelope detection and high-speed data line protection
PN junction guard ringIntegrated edge termination - Prevents premature avalanche at chip periphery, improving reliability under repetitive ESD or load dump stress
AEC-Q101 qualificationAutomotive-grade stress testing passed - Validated for use in engine control units, body electronics, and ADAS sensor interfaces
Halogen & antimony free<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Complies with automotive OEM green material specifications and RoHS 3 (2015/863/EU)

Applications

Automotive Power Rail ClampUSB Data Line ESD Protection

Use Scenario: Suppresses load-dump transients on 12 V vehicle battery lines feeding infotainment head units.

IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between VBAT and GND, conducting only during overvoltage events above 40 V.

Use Value: Limits peak clamped voltage to ≤45 V with <2 µA leakage at nominal 13.5 V, preserving downstream LDO input stage integrity.

Use Scenario: Protects USB 2.0 D+ and D− lines from IEC 61000-4-2 ±8 kV contact discharge.

IC Role / Device Role / Timing Role: Low-capacitance (6.0 pF) bidirectional clamping diode array configured as two back-to-back BAT64CQ units per line.

Use Value: Maintains signal rise/fall times <1 ns while limiting line voltage excursion to ±3.6 V during ESD event.

Low-Voltage Signal RectificationRF Detector in ISM Band Receivers

Use Scenario: Demodulates 2.4 GHz Wi-Fi beacon signals in battery-powered IoT sensor nodes.

IC Role / Device Role / Timing Role: Half-wave rectifier in envelope detector circuit, converting RF AC to DC baseband voltage.

Use Value: Delivers 350 mV output at 1 mA input with <3 ns delay, enabling accurate RSSI estimation below –30 dBm.

Use Scenario: Detects 915 MHz sub-GHz wireless link presence in smart meter RF front ends.

IC Role / Device Role / Timing Role: Zero-bias Schottky detector diode operating without external bias, leveraging low VF and low CT.

Use Value: Achieves –48 dBm sensitivity with 6.0 pF capacitance minimizing RF shunting, supporting duty-cycled receiver architectures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SBAT54AWT1GSame SOT23 package, 30 V VRRM, 200 mA IO, 0.33 V VF @ 10 mALower voltage rating limits use in 12 V automotive clamping; better suited for 3.3 V logic-level detectionSelect when lower VF at microamp bias is prioritized over 40 V blocking capability
NSR0230HT1GSame 40 V VRRM, but 300 mA IO, 0.52 V VF @ 100 mA, 15 pF CTHigher capacitance reduces RF bandwidth; higher current rating suits higher-power DC-DC feedback pathsChoose for higher continuous current needs where 15 pF CT is acceptable in <10 MHz applications

Compared with SBAT54AWT1G and NSR0230HT1G, BAT64CQ-7-F uniquely balances 40 V blocking, 3.0 ns tRR, and 6.0 pF CT-making it optimal for automotive signal-line protection and sub-GHz RF detection where both speed and low capacitance are required.

Availability

BAT64CQ-7-F is available at Aetrix Electronics and suitable for automotive power rail clamping, USB data line ESD protection, and low-voltage RF detection requiring stable component supply, AEC-Q101 compliance, and consistent SOT23 packaging across production lots.

Supply support for BAT64CQ-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAT64 series belongs to Diodes' automotive-qualified Schottky diode product line, engineered specifically for transient voltage suppression and high-speed signal conditioning in harsh-environment electronic control modules.

FAQ

What is the marking code for BAT64CQ-7-F on the SOT23 package?

The top-side marking for BAT64CQ-7-F is "K67" followed by a two-character date code (e.g., "K67 M9" for April 2025), per Diodes' DS45354 Rev. 5–2 specification. The "K67" uniquely identifies the BAT64CQ variant within the BAT64Q/AQ/CQ/SQ family.

Is BAT64CQ-7-F suitable for bidirectional ESD protection?

Yes-when used in a back-to-back configuration (anode-to-anode or cathode-to-cathode), BAT64CQ-7-F provides symmetrical ±40 V clamping with matched VF and CT characteristics. This configuration is validated in Diodes' application note AP02011 for USB 2.0 line protection.

Does BAT64CQ-7-F require a heatsink for 250 mA operation?

No heatsink is required at 250 mA continuous DC if mounted on a standard FR-4 PCB with Diodes' recommended SOT23 pad layout (2.0 mm × 0.8 mm copper area). At TA = 25 °C, junction temperature rise is ~125 °C (250 mW × 500 °C/W), staying within the 150 °C TJ max limit only with strict ambient control.

How does the PN junction guard ring improve reliability?

The integrated PN guard ring redistributes electric field intensity away from the active Schottky junction periphery, preventing localized avalanche and hot-carrier injection during repetitive 40 V reverse transients. This extends lifetime under ISO 7637-2 Pulse 5a load-dump stress and improves ESD robustness per AEC-Q101 stress test HBM ≥8 kV.

BAT64CQ-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io) (per Diode):
250mA
Voltage - Forward (Vf) (Max) @ If:
750 mV @ 100 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 ns
Current - Reverse Leakage @ Vr:
2 µA @ 40 V
Operating Temperature - Junction:
-65°C ~ 150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

BAT64CQ-7-F FAQ

1.How can I place an order for BAT64CQ-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT64CQ-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT64CQ-7-F reliable?

The price and inventory of BAT64CQ-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT64CQ-7-F is usually 5 days.

3.What payment methods are accepted for BAT64CQ-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT64CQ-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT64CQ-7-F?

BAT64CQ-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT64CQ-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT64CQ-7-F?

For technical support, including BAT64CQ-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT64CQ-7-F requirements.

6.How does Aetrix verify that BAT64CQ-7-F is sourced from the original manufacturer or authorized distributors?

All BAT64CQ-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT64CQ-7-F meets industry standards.

7.What is the process for return or replacement of BAT64CQ-7-F?

All BAT64CQ-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAT64CQ-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT64CQ-7-F part is unused and in its original packaging.

Return procedure for BAT64CQ-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAT64CQ-7-F Tags

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