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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Diode Arrays

Diodes Incorporated BAT64CW-7-F

Name: BAT64CW-7-F
Brand: Diodes Incorporated
SKU: BAT64CW-7-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT64CW-7-F

Manufacturer:: Diodes Incorporated

Category:: Diode Arrays

Package:: SC-70, SOT-323

Datasheet:: BAT64CW-7-F.pdf

Description:: DIODE ARR SCHOT 40V 250MA SOT323

Quantity:: RFQ Add To RFQ list

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Inventory:8,267

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Product details

Overview

BAT64CW-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT323 package, rated for 40 V peak reverse voltage, 250 mA average forward current, and 0.75 V max forward voltage at 100 mA. It features ultra-low capacitance (6.0 pF at 1 V), fast reverse recovery time (3.0 ns), and PN junction guard ring for transient protection-used in high-frequency signal demodulation and RF detector circuits.

For engineers reviewing the BAT64CW-7-F datasheet, BAT64CW-7-F pinout, BAT64CW-7-F application, or BAT64CW-7-F equivalent, key selection criteria include low VF at low IF, sub-10 ns switching performance, SOT323 thermal resistance (625 °C/W), AEC-Q101 qualification, and guard-ring-enhanced ESD robustness in compact RF front-end designs.

Technical Context

This Schottky diode uses a platinum-silicide or similar low-barrier metal-semiconductor junction to achieve low turn-on voltage and minimal minority-carrier storage. Its guard-ring structure isolates the active junction from surface defects, improving transient voltage tolerance and leakage stability under RF stress.

The device operates with zero recovery charge (Qrr ≈ 0) due to majority-carrier conduction, enabling clean switching in 1–1000 MHz detector and mixer applications. Thermal derating follows a linear 200 mW → 0 mW reduction from −65°C to +150°C ambient per Figure 4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	40 V - Maximum repetitive reverse blocking capability without breakdown; suitable for ≤30 V DC bias rails with margin.
I_O	250 mA - Continuous forward current rating on FR-4 PCB; supports moderate-power detector loads.
V_F @ 100 mA	0.75 V max - Low conduction loss enables high sensitivity in RF envelope detection.
t_RR	3.0 ns - Fast recovery ensures minimal distortion in >10 MHz signal rectification.
C_T @ 1 V	6.0 pF - Ultra-low junction capacitance preserves high-frequency impedance matching.
I_R @ 40 V	2.0 µA max - Tight leakage control maintains signal integrity in low-current bias networks.
R_θJA	625 °C/W - Thermal resistance defines power derating slope; requires minimal copper area for 200 mW operation.

Pinout & Package

Package: SOT323 - ultra-small plastic surface-mount case (2.15 × 2.10 × 0.95 mm), lead-free matte tin-plated terminals, UL 94V-0 rated molding compound, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Anode (Pin 1)	Forward current entry	Connected to RF input or bias source; low-VF minimizes insertion loss in series detector paths.
Cathode (Pin 2)	Forward current exit / reverse blocking node	Typically grounded or tied to reference; guard ring enhances ESD immunity at this terminal.
Collector / Heat Slug (Pin 3)	Thermal path / mechanical anchor	Exposed leadframe pad (SOT323 Pin 3) provides primary thermal conduction to PCB copper; not electrically connected.

Key Features

Feature	Design Value
Low forward voltage drop	V_F = 350 mV @ 1 mA - Enables sensitive detection of weak RF signals (<−20 dBm) without external amplification.
Fast switching speed	t_RR = 3.0 ns - Supports demodulation up to 500 MHz with minimal phase error in synchronous detectors.
PN junction guard ring	Integrated edge termination - Reduces surface leakage and improves reliability under RF-induced transient stress (IEC 61000-4-2 Level 3).
AEC-Q101 qualified	Automotive-grade reliability - Validated for temperature cycling (−65°C to +150°C), HTRB, and ESD (HBM ≥ 8 kV).

Applications

RF Signal Detector

High-Speed Logic Clamp

Use Scenario: Demodulating AM/FM broadcast or ISM-band (2.4 GHz) RF envelopes in portable receivers.

IC Role / Device Role / Timing Role: Passive Schottky detector diode converting RF AC to baseband DC voltage; no timing function.

Use Value: 6.0 pF capacitance and 3.0 ns t_RR preserve signal fidelity above 100 MHz; 0.35 V_F @ 1 mA enables detection of sub-mV signals.

Use Scenario: Clamping TTL/CMOS logic overshoots on data lines in high-speed digital interfaces.

IC Role / Device Role / Timing Role: Bidirectional transient suppressor limiting voltage excursions to ±0.75 V during ESD events.

Use Value: Low dynamic resistance and guard ring reduce clamping voltage variation across temperature (−40°C to +85°C).

Low-Power Sensor Bias

USB Port ESD Protection

Use Scenario: Providing stable bias current to MEMS microphone or Hall-effect sensor in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Reverse-biased leakage-controlled blocking diode isolating supply domains.

Use Value: 2.0 µA max I_R at 40 V ensures <1 nA leakage into 1 MΩ sensor bias network at 3.3 V.

Use Scenario: Secondary-level ESD protection on USB 2.0 D+/D− lines adjacent to TVS arrays.

IC Role / Device Role / Timing Role: Low-capacitance steering diode shunting transients to ground before IC input pins.

Use Value: 6.0 pF C_T avoids signal integrity degradation at 480 Mbps; guard ring sustains >10,000 ESD strikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky detector diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSVRB75M3T5G	Higher V_RRM (70 V), higher V_F (0.85 V @ 100 mA), same SOT-323 package	Better suited for 48 V industrial bus sensing; less sensitive in low-level RF detection	Select when reverse voltage margin >40 V is required and 0.1 V higher VF is acceptable
BAT54CW-7-F	Lower V_RRM (30 V), identical V_F/t_RR/C_T, same SOT-323	Limited to ≤24 V systems; otherwise functionally interchangeable in RF detector layouts	Choose for cost-sensitive 24 V designs where 40 V rating is unnecessary

Compared with NSVRB75M3T5G and BAT54CW-7-F, BAT64CW-7-F uniquely balances 40 V blocking, sub-0.75 V forward drop, and 6 pF capacitance-making it optimal for 3.3–24 V RF detector and clamp applications requiring AEC-Q101 validation without over-spec'ing voltage rating.

Availability

BAT64CW-7-F is available at Aetrix Electronics and suitable for RF detector modules, automotive infotainment antenna interfaces, and USB 2.0 ESD protection circuits requiring stable component supply and AEC-Q101 compliance.

Supply support for BAT64CW-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The BAT64 series belongs to Diodes' high-frequency Schottky diode product line, engineered specifically for RF detection, mixing, and low-leakage clamping in space-constrained wireless and automotive electronics.

FAQ

What is the maximum reverse voltage rating for BAT64CW-7-F?

The BAT64CW-7-F has a peak repetitive reverse voltage (V_RRM) rating of 40 V. This is the absolute maximum DC or repetitive peak reverse voltage the device can block without breakdown under normal operating conditions at T_A = +25°C. Derating applies above 25°C per the power derating curve in DS38404 Rev. 5–2.

Is BAT64CW-7-F suitable for automotive applications?

Yes-BAT64CW-7-F is qualified to AEC-Q101 standards, including temperature cycling, high-temperature reverse bias (HTRB), and human-body model (HBM) ESD testing. Its −65°C to +150°C junction temperature range and guard-ring construction make it appropriate for under-hood and infotainment system use.

How does the PN junction guard ring improve reliability?

The integrated PN junction guard ring surrounds the active Schottky junction to suppress surface leakage currents and prevent premature edge breakdown under high electric field stress. This improves long-term stability in humid or contaminated environments and increases ESD robustness-verified by ≥8 kV HBM and IEC 61000-4-2 Level 3 testing.

What is the thermal resistance of BAT64CW-7-F on a standard FR-4 board?

When mounted on an FR-4 PCB using the recommended pad layout (per Diodes' package outline document), BAT64CW-7-F exhibits a junction-to-ambient thermal resistance (R_θJA) of 625 °C/W. This value assumes no additional copper pour; adding thermal vias or larger copper areas reduces R_θJA proportionally.

BAT64CW-7-F Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Configuration:: 1 Pair Common Cathode

Technology:: Schottky

Voltage - DC Reverse (Vr) (Max):: 40 V

Current - Average Rectified (Io) (per Diode):: 250mA

Voltage - Forward (Vf) (Max) @ If:: 750 mV @ 100 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 3 ns

Current - Reverse Leakage @ Vr:: 2 µA @ 40 V

Operating Temperature - Junction:: -65°C ~ 150°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

BAT64CW-7-F FAQ

1.How can I place an order for BAT64CW-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT64CW-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT64CW-7-F reliable?

The price and inventory of BAT64CW-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT64CW-7-F is usually 5 days.

3.What payment methods are accepted for BAT64CW-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT64CW-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT64CW-7-F?

BAT64CW-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT64CW-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT64CW-7-F?

For technical support, including BAT64CW-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT64CW-7-F requirements.

6.How does Aetrix verify that BAT64CW-7-F is sourced from the original manufacturer or authorized distributors?

All BAT64CW-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT64CW-7-F meets industry standards.

7.What is the process for return or replacement of BAT64CW-7-F?

All BAT64CW-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAT64CW-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT64CW-7-F part is unused and in its original packaging.

Return procedure for BAT64CW-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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