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Infineon Technologies BAT64E6327HTSA1
- Part No.:
- BAT64E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAT64E6327HTSA1.pdf
- Description:
- DIODE SCHOTTKY 40V 120MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:21,387
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Product details
Overview
BAT64E6327HTSA1 from Infineon Technologies is a silicon Schottky diode in SCD80 (SOT-23 variant) package, configured as a single anode-cathode device with 40 V reverse voltage rating, 250 mA forward current capability, and ultrafast 5 ns reverse recovery time. It delivers low forward voltage (310 mV typ. at 10 mA) and 4 pF capacitance at 1 V for high-frequency clamping and bias isolation in automotive sensor interfaces.
For engineers reviewing the BAT64E6327HTSA1 datasheet, BAT64E6327HTSA1 pinout, BAT64E6327HTSA1 application, or BAT64E6327HTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, integrated diffused guard ring for ESD robustness, thermal resistance of ≤115 K/W (junction-to-soldering point), and suitability for low-loss meter protection circuits requiring stable leakage performance up to 85°C.
Technical Context
This Schottky diode employs a planar silicon process with diffused guard ring to suppress edge breakdown and ensure reliable operation under transient overvoltage. Its low barrier height yields sub-0.4 V forward drop at 30 mA while maintaining <2 µA reverse leakage at 30 V and 25°C.
The device's 5 ns trr and 4 pF CT at 1 MHz/1 V enable effective RF signal clamping and high-speed sampling protection without introducing significant phase distortion or loading in analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage | 40 V - supports bias isolation in 24 V automotive systems with 2× safety margin |
| Forward Current | 250 mA - sufficient for continuous LED bias or sensor supply rail clamping |
| Reverse Recovery Time | 5 ns - enables use in >100 MHz RF detector and fast-switching protection paths |
| Forward Voltage | 310 mV typ. at 10 mA - minimizes power loss in low-voltage precision reference paths |
| Diode Capacitance | 4 pF at 1 V, 1 MHz - preserves bandwidth in RF envelope detection and antenna switching |
| Junction Temperature | 150 °C - allows operation in under-hood automotive environments with derated current |
| Thermal Resistance | ≤115 K/W (RthJS) - enables direct PCB copper pour heatsinking without external thermal vias |
Pinout & Package
Package: SCD80 (pin-compatible with SOT-23 but optimized for thermal performance; 1.7 mm × 0.8 mm footprint, 0.7 mm height, cathode marked by bar on terminal 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | Input node for forward conduction path; connects to protected signal or bias source |
| 2 | Cathode | Output/reference node; marked with cathode bar; ties to ground or lower-potential rail |
| 3 | Not connected | Internally isolated; no electrical function - must remain unconnected in layout |
Key Features
| Feature | Design Value |
|---|---|
| Integrated diffused guard ring | Suppresses surface leakage and improves voltage standoff consistency across temperature |
| AEC-Q101 qualified | Validated for automotive applications including engine control and body electronics |
| Pb-free RoHS-compliant packaging | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (J-STD-020) |
| Low IR at elevated temperature | 200 µA max reverse current at 30 V and 85°C - ensures stable clamping in hot ambient |
Applications
| Automotive Sensor Protection | RF Signal Clamping |
|---|---|
Use Scenario: Protecting Hall-effect and crankshaft position sensors from load-dump transients and ESD events in 12 V/24 V vehicle networks. IC Role / Device Role: Bidirectional transient voltage clamp placed between sensor output and microcontroller input. Use Value: 5 ns trr prevents signal distortion during fast-edge pulses; 40 V VR withstands ISO 7637-2 Pulse 1/2a without breakdown. | Use Scenario: Envelope detection and signal limiting in UHF RFID reader front-ends and GPS L1-band receivers. IC Role / Device Role: Passive RF limiter diode in shunt configuration across antenna feed line. Use Value: 4 pF CT avoids detuning of 1.575 GHz matching networks; low VF maintains detector sensitivity down to –30 dBm. |
| Metering Circuit Bias Isolation | Low-Voltage Reference Clamp |
Use Scenario: Isolating precision voltage references from switching noise in smart electricity meters with isolated DC-DC converters. IC Role / Device Role: Reverse-biased Schottky barrier isolating reference rail from noisy digital supply domains. Use Value: <2 µA IR at 25°C ensures reference stability; 310 mV VF enables minimal headroom loss when forward-biased for fault current limiting. | Use Scenario: Clamping DAC output buffers and op-amp inputs against overvoltage in battery-powered portable instrumentation. IC Role / Device Role: Low-capacitance, low-VF clamp protecting 12-bit ADC drivers from ±5 V transients. Use Value: 115 K/W RthJS allows direct thermal coupling to ground plane; 250 mA IF handles brief surge currents without bond wire fusing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR0230HT1G | 30 V VR, 200 mA IF, 0.6 pF CT - lower capacitance but reduced voltage margin | Preferred for <1 GHz RF apps where VR margin less critical than CT | Select when minimizing parasitic capacitance outweighs need for 40 V transient immunity |
| BAT54C,215 | 30 V VR, common-cathode dual, 10 ns trr - higher recovery time, dual configuration | Suitable for dual-rail clamping or level-shifting where space permits dual diode | Choose only if dual-diode topology matches schematic and layout constraints |
Compared with NSR0230HT1G and BAT54C,215, BAT64E6327HTSA1 uniquely balances 40 V robustness, 5 ns speed, and 4 pF capacitance - making it optimal for automotive-grade RF front-end protection where both voltage margin and bandwidth preservation are non-negotiable.
Availability
BAT64E6327HTSA1 is available at Aetrix Electronics and suitable for automotive sensor protection, RF signal clamping, and precision metering applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAT64E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to IATF 16949.
The BAT64 series belongs to Infineon's high-reliability Schottky diode product line, designed specifically for AEC-Q101-compliant automotive signal conditioning and protection functions where low VF, fast trr, and guard-ring-enhanced ruggedness are mandatory.
FAQ
What is the maximum junction temperature and how does it affect derating?
The absolute maximum junction temperature is 150°C. At ambient temperatures above 85°C, forward current must be derated per the IF vs. TS curves in the datasheet - e.g., at 125°C case temperature, maximum continuous IF drops to ~150 mA for BAT64E6327HTSA1 due to its ≤115 K/W RthJS.
Is BAT64E6327HTSA1 pin-compatible with standard SOT-23 diodes?
It uses the SCD80 package - a dimensionally optimized variant of SOT-23 with identical 1.7 mm × 0.8 mm footprint and 0.7 mm height, but with enhanced thermal pad design. Pin 1 (anode) and Pin 2 (cathode) align with JEDEC SOT-23; Pin 3 is NC and must not be soldered.
Does this diode require special handling for ESD sensitivity?
Yes - BAT64E6327HTSA1 is classified as ESD-sensitive (HBM Class 2, ≥2 kV). Handling requires grounded workstations, ionized air, and static-dissipative packaging; PCB layout must avoid floating traces near the cathode/anode pads to prevent field-induced leakage.
How does the diffused guard ring improve reliability compared to planar-only Schottky diodes?
The integrated diffused guard ring reduces electric field crowding at the mesa edge, suppressing premature avalanche and improving consistency of reverse breakdown voltage across temperature and process variation - validated by AEC-Q101 stress testing including HTGB and TCT.
BAT64E6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- BAT64
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 120mA
- Voltage - Forward (Vf) (Max) @ If:
- 750 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 30 V
- Capacitance @ Vr, F:
- 6pF @ 1V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
- Operating Temperature - Junction:
- 150°C (Max)
BAT64E6327HTSA1 FAQ
1.How can I place an order for BAT64E6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT64E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT64E6327HTSA1 reliable?
The price and inventory of BAT64E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT64E6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BAT64E6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT64E6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT64E6327HTSA1?
BAT64E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT64E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT64E6327HTSA1?
For technical support, including BAT64E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT64E6327HTSA1 requirements.
6.How does Aetrix verify that BAT64E6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BAT64E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT64E6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BAT64E6327HTSA1?
All BAT64E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT64E6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT64E6327HTSA1 part is unused and in its original packaging.
Return procedure for BAT64E6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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