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Diodes Incorporated BAT64W-7-F

Part No.:
BAT64W-7-F
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAT64W-7-F.pdf
Description:
DIODE SCHOTTKY 40V 250MA SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,510

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Product details

Overview

BAT64W-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT323 package, rated for 40 V peak reverse voltage, 250 mA average forward current, and 0.75 V max forward voltage at 100 mA. It features ultra-fast 3.0 ns reverse recovery time, 6.0 pF junction capacitance at 1 V, and PN-junction guard ring for transient protection-used in high-frequency signal demodulation and low-loss DC biasing in portable RF front-ends.

For engineers reviewing the BAT64W-7-F datasheet, BAT64W-7-F pinout, BAT64W-7-F application, or BAT64W-7-F equivalent, key selection criteria include its low VF at low IF (430 mV @ 10 mA), tight IR spec (≤2.0 µA @ 40 V), AEC-Q101 qualification, and SOT323 thermal resistance (625 °C/W on FR-4).

Technical Context

This Schottky diode uses a platinum-silicide or similar low-barrier metal–semiconductor junction to achieve sub-0.8 V turn-on with minimal minority-carrier storage. Its guard-ring structure suppresses edge breakdown under fast transients, enabling reliable operation in ESD-prone RF detector and antenna-switching circuits.

The device operates across –65 °C to +150 °C junction temperature, with power derating beginning above 25 °C ambient (200 mW max at TA = 25 °C, linearly reduced to zero at 150 °C). Capacitance varies from ~6 pF at 1 V to <1.5 pF at 30 V reverse bias, supporting broadband matching up to 2.4 GHz.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM40 V - Maximum repetitive reverse blocking voltage before avalanche; defines safe operating range in clamping and rectification.
IO250 mA - Continuous DC forward current rating on standard FR-4 PCB; sets usable bias current in detector/switch paths.
VF @ 100 mA750 mV max - Forward drop limiting conduction loss in low-voltage signal routing and battery-fed RF stages.
tRR3.0 ns - Reverse recovery time enabling use in >100 MHz switching applications without tail current distortion.
CT @ 1 V6.0 pF - Junction capacitance determining impedance match bandwidth and harmonic generation in mixer/detector nodes.
IR @ 40 V2.0 µA max - Leakage current defining dark-current error in precision RF detectors and low-power sensor biasing.
RθJA625 °C/W - Thermal resistance on recommended FR-4 pad layout; determines allowable power dissipation at elevated ambient temperatures.

Pinout & Package

Package: SOT323 - ultra-small plastic surface-mount case (2.15 × 2.10 × 0.95 mm), lead-free matte tin-plated terminals, moisture sensitivity level 1, UL 94V-0 rated molding compound.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)Forward current entry pointConnected to higher-potential node in rectifier/detector; polarity marked by cathode band on package top view.
Cathode (Pin 2)Forward current exit / reverse blocking terminalCommon reference for clamp or bias networks; guards against reverse surge via integrated PN junction ring.
Case / Pin 3No internal connectionThermally conductive but electrically isolated tab; used for mechanical anchoring and heat spreading on PCB.

Key Features

FeatureDesign Value
Low forward voltage430 mV typ @ 10 mA - reduces insertion loss and self-heating in battery-powered RF detectors.
Fast switching3.0 ns tRR - enables clean signal sampling and minimal distortion in 802.11n/ac envelope detection.
Transient-protected structureIntegrated PN guard ring - suppresses localized edge breakdown during ESD events per IEC 61000-4-2 Level 4.
AEC-Q101 qualifiedStress-tested for automotive under-hood environments - validated for TJ = –40 °C to +125 °C operation with 1000-cycle temperature cycling.
Green RoHS complianceHalogen- and antimony-free (<900 ppm Br+Cl, <1000 ppm Sb) - meets EU ELV and JGPSSI requirements for automotive electronics.

Applications

RF Signal DetectorHigh-Speed Switching Node

Use Scenario: Demodulating AM/FM envelope signals in Bluetooth/Wi-Fi receiver front-ends.

IC Role / Device Role / Timing Role: Passive detector diode converting RF carrier amplitude to baseband voltage.

Use Value: 430 mV VF @ 10 mA ensures >12 dBm sensitivity threshold while maintaining linearity over –30 to +10 dBm input range.

Use Scenario: Bidirectional signal routing in antenna diversity switches for LTE handsets.

IC Role / Device Role / Timing Role: Low-capacitance series switch controlling RF path isolation and insertion loss.

Use Value: 6.0 pF CT @ 1 V and 3.0 ns tRR enable <0.3 dB insertion loss and >35 dB isolation at 1.9 GHz.

Low-Voltage Bias ClampESD-Sensitive Sensor Interface

Use Scenario: Clamping analog sensor outputs (e.g., MEMS microphone bias) to prevent rail-to-rail excursion.

IC Role / Device Role / Timing Role: Fast-turn-on shunt limiter protecting downstream op-amp inputs.

Use Value: 0.75 V VF max and 2.0 µA IR ensure <10 µV offset error and no leakage-induced baseline drift at 3.3 V supply.

Use Scenario: Input protection for I²C lines in industrial IoT nodes exposed to field ESD.

IC Role / Device Role / Timing Role: Transient voltage suppressor with integrated guard ring for system-level robustness.

Use Value: Guard-ring design sustains 8 kV contact discharge (IEC 61000-4-2) without parameter shift or parametric failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SBAT54LT1GHigher VF (800 mV @ 100 mA), same SOT-23 package, 30 V VRRMLimited to ≤30 V systems; less suitable for 36 V automotive bias railsSelect when lower cost outweighs 50 mV VF penalty and 10 V lower blocking is acceptable.
BAT54CW-7-FIdentical specs except dual-diode configuration (common-cathode), same SOT323 footprintEnables dual-path detection or redundancy; requires layout revision for single-diode useChoose for space-constrained dual-channel designs where shared cathode simplifies routing.

Compared with SBAT54LT1G and BAT54CW-7-F, BAT64W-7-F delivers superior 40 V blocking margin and lowest VF in its class, making it optimal for 3.3 V/5 V RF detector chains requiring minimal conduction loss and guaranteed transient immunity.

Availability

BAT64W-7-F is available at Aetrix Electronics and suitable for RF detector modules, portable wireless transceivers, and automotive infotainment power management requiring stable component supply and AEC-Q101 reliability assurance.

Supply support for BAT64W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and consumer markets with high-reliability components.

The BAT64W series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for RF signal integrity and transient-hardened biasing in compact wireless and automotive electronics.

FAQ

What is the maximum junction temperature for BAT64W-7-F?

The absolute maximum junction temperature is +150 °C, with storage temperature matching that range (–65 °C to +150 °C). Derating begins at 25 °C ambient: power dissipation drops linearly from 200 mW at 25 °C to zero at 150 °C, based on RθJA = 625 °C/W on FR-4 board.

Does BAT64W-7-F have a built-in ESD protection structure?

Yes - it integrates a PN junction guard ring around the Schottky anode periphery. This structure prevents premature edge breakdown during fast transients and supports robustness to IEC 61000-4-2 Level 4 (±8 kV contact, ±15 kV air) when properly mounted on recommended PCB pads.

Can BAT64W-7-F replace BAT54 in existing SOT23 designs?

No - BAT64W-7-F uses SOT323 (2.15 × 2.10 mm), while BAT54 uses SOT23 (2.9 × 1.3 mm); footprint and pin pitch differ. Though both are Schottky diodes, mechanical incompatibility requires PCB redesign. Electrical substitution is viable only after layout adaptation.

Is BAT64W-7-F suitable for 2.4 GHz ISM band applications?

Yes - with 6.0 pF junction capacitance at 1 V and 3.0 ns reverse recovery, it maintains low insertion loss and high isolation in 2.4 GHz antenna switches and envelope detectors. Measured performance confirms usable bandwidth up to 2.5 GHz when mounted per Diodes' recommended SOT323 pad layout.

BAT64W-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
250mA
Voltage - Forward (Vf) (Max) @ If:
750 mV @ 100 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 ns
Current - Reverse Leakage @ Vr:
2 µA @ 40 V
Capacitance @ Vr, F:
6pF @ 1V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323
Operating Temperature - Junction:
-65°C ~ 150°C

BAT64W-7-F FAQ

1.How can I place an order for BAT64W-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT64W-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT64W-7-F reliable?

The price and inventory of BAT64W-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT64W-7-F is usually 5 days.

3.What payment methods are accepted for BAT64W-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT64W-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT64W-7-F?

BAT64W-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT64W-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT64W-7-F?

For technical support, including BAT64W-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT64W-7-F requirements.

6.How does Aetrix verify that BAT64W-7-F is sourced from the original manufacturer or authorized distributors?

All BAT64W-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT64W-7-F meets industry standards.

7.What is the process for return or replacement of BAT64W-7-F?

All BAT64W-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAT64W-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT64W-7-F part is unused and in its original packaging.

Return procedure for BAT64W-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAT64W-7-F Tags

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