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Nexperia USA Inc. BAT854AW,115
- Part No.:
- BAT854AW,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAT854AW,115.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:10,913
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Product details
Overview
BAT854AW,115 from Nexperia is a dual Schottky barrier diode in SOT323 (SC-70) package, featuring common-anode configuration, 40 V reverse voltage rating, 200 mA forward current per diode, and 550 mV forward voltage at 100 mA - optimized for ultra-high-speed switching and low-power clamping in portable electronics.
For engineers reviewing the BAT854AW,115 datasheet, BAT854AW,115 pinout, BAT854AW,115 application, or BAT854AW,115 equivalent, key selection criteria include pulsed reverse leakage (0.5 µA at 25 V), junction-to-ambient thermal resistance (625 K/W on FR4), diode capacitance (20 pF at 1 V), and guard ring–enabled stress protection in a 2.0 × 1.25 × 0.95 mm footprint.
Technical Context
This dual Schottky diode integrates two independent anode-connected diodes sharing a common anode terminal (Pin 3), with isolated cathodes (Pins 1 and 2). Its planar structure with integrated guard ring enhances ESD and transient robustness without compromising switching speed.
The device operates across –65 °C to +150 °C ambient range, supports repetitive peak forward current up to 300 mA (tp ≤ 1 s), and delivers stable VF characteristics from 0.1 mA to 100 mA - enabling precise low-current biasing and fast recovery in signal-path protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - defines maximum DC blocking capability per diode without breakdown |
| Forward Current (IF) | 200 mA continuous - sets max steady-state conduction limit per diode |
| Forward Voltage (VF) | 550 mV at IF = 100 mA, 25 °C - enables low-loss clamping and minimal power dissipation |
| Reverse Current (IR) | 0.5 µA at VR = 25 V, pulsed - ensures high isolation in voltage-clamp and level-shift circuits |
| Diode Capacitance (Cd) | 20 pF at VR = 1 V, 1 MHz - supports >100 MHz signal integrity in RF detector and high-speed logic interfaces |
| Junction Temp (Tj) | 150 °C max - allows operation in thermally constrained handheld and IoT enclosures |
| Thermal Resistance (Rth(j-a)) | 625 K/W on single-sided FR4 PCB - informs derating for sustained 200 mA loads without heatsinking |
Pinout & Package
Encapsulated in SOT323 (SC-70), a 3-terminal surface-mount plastic package measuring 2.0 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch and tin-plated terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Diode 1) | Output node for first Schottky path; connects to load or signal line requiring clamping |
| 2 | Cathode (Diode 2) | Independent output node for second Schottky path; enables dual-rail or redundant protection |
| 3 | Common Anode | Shared input node; simplifies PCB routing in OR-ing, polarity protection, and dual-input clamp designs |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring protection | Integrated stress-relief structure improves ESD robustness and long-term reliability under voltage transients |
| Low VF across current range | 200–550 mV from 0.1 mA to 100 mA - reduces dropout and heat generation in battery-powered systems |
| Ultra-low IR | 0.5 µA pulsed reverse leakage - minimizes standby current in always-on protection circuits |
| Small-footprint SOT323 | 2.0 × 1.25 mm body - saves board space in compact wearables and sensor nodes |
Applications
| USB Port Protection | RF Detector Biasing |
|---|---|
Use Scenario: Protecting USB 2.0 data lines from ESD and overvoltage events during hot-plug insertion. IC Role / Device Role / Timing Role: Dual-cathode Schottky clamp limiting differential and common-mode transients to <±15 V. Use Value: Guard ring and 0.5 µA IR ensure no signal loading or DC offset shift during normal operation. |
Use Scenario: Providing temperature-stable bias to GaAs FET detectors in 2.4 GHz ISM-band receivers. IC Role / Device Role / Timing Role: Low-Cd (20 pF), low-VF diode rectifying RF envelope while minimizing harmonic distortion. Use Value: 550 mV VF at 100 mA enables accurate DC output scaling without calibration drift. |
| Handheld Device Power OR-ing | Low-Power Microcontroller Reset Clamping |
Use Scenario: Selecting between coin-cell and USB power sources in Bluetooth earbuds with <10 µA quiescent current. IC Role / Device Role / Timing Role: Common-anode dual diode implementing lossless power-source arbitration. Use Value: 200 mA rating and 550 mV VF allow >95% efficiency at 3.3 V supply with 100 mA load. |
Use Scenario: Clamping reset pin voltage to safe levels during brown-out or ESD events in ARM Cortex-M0+ MCUs. IC Role / Device Role / Timing Role: Fast-recovery Schottky shunting transient spikes above VDD + 0.3 V. Use Value: Sub-1 ns recovery and 0.5 µA IR prevent false resets or latch-up during 100 ns pulses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F40NXT5G | Same SOT323 package, but 40 V/200 mA with VF = 520 mV @ 100 mA; no guard ring | Lacks integrated guard ring - requires external TVS for ESD-prone USB ports | Select when lower VF is prioritized and system-level ESD protection is already implemented |
| Vishay VS-2EDH01HM3/85A | SOD-323 package (smaller 1.7 × 1.25 mm), 40 V/200 mA, VF = 580 mV @ 100 mA, Cd = 15 pF | Lower capacitance suits higher-frequency RF detection (>5 GHz), but reduced thermal margin (Rth(j-a) = 750 K/W) | Prefer for mmWave detector bias where size and Cd outweigh thermal constraints |
Compared with BAT854AW,115, NSR20F40NXT5G trades guard ring robustness for marginally lower VF, while VS-2EDH01HM3/85A offers smaller footprint and lower Cd at the cost of thermal performance and higher VF - making BAT854AW,115 optimal for balanced ESD resilience, thermal management, and general-purpose clamping.
Availability
BAT854AW,115 is available at Aetrix Electronics and suitable for USB port protection, RF detector biasing, handheld device power OR-ing, and low-power microcontroller reset clamping requiring stable component supply and full traceability.
Supply support for BAT854AW,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, headquartered in Nijmegen, Netherlands.
BAT854AW,115 belongs to Nexperia's Schottky diode portfolio designed specifically for low-voltage, high-speed signal integrity and power-path protection in consumer and industrial portable electronics.
FAQ
Is BAT854AW,115 automotive qualified?
No. BAT854AW,115 is explicitly marked non-automotive qualified per Nexperia's revision history (v.3, July 2023). It lacks AEC-Q101 qualification, automotive-grade testing, and extended temperature validation beyond 150 °C junction. For automotive use, Nexperia recommends the BAT854W-Q series with full AEC-Q101 compliance and enhanced HTOL screening.
What is the meaning of the '82%' marking on BAT854AW,115 units?
The '82%' marking is a manufacturing site code per Nexperia's datasheet Table 4, where '%' serves as a placeholder for the actual production location identifier (e.g., '82A' for one fab, '82B' for another). This code enables full traceability to wafer lot, assembly line, and test batch - critical for failure analysis and quality audits.
Can BAT854AW,115 be used in reverse-biased RF applications?
Yes - its 20 pF capacitance at 1 V reverse bias and low series resistance support RF coupling and tuning up to ~1 GHz. However, capacitance varies nonlinearly with VR (e.g., 16 pF at 5 V, 12 pF at 10 V per Fig. 3), so impedance matching must account for this voltage dependence in variable-tuned circuits.
How does the guard ring affect layout requirements?
The integrated guard ring requires ≥0.3 mm clearance from adjacent copper pours or traces on all sides of the SOT323 footprint, per Nexperia's layout guidelines. Violating this spacing risks field crowding and premature breakdown - especially under humidity or contamination. The reflow solder land pattern in Fig. 5 must be strictly followed to maintain guard ring effectiveness.
BAT854AW,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 550 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 nA @ 25 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAT854AW,115 FAQ
1.How can I place an order for BAT854AW,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT854AW,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT854AW,115 reliable?
The price and inventory of BAT854AW,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT854AW,115 is usually 5 days.
3.What payment methods are accepted for BAT854AW,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT854AW,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT854AW,115?
BAT854AW,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT854AW,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT854AW,115?
For technical support, including BAT854AW,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT854AW,115 requirements.
6.How does Aetrix verify that BAT854AW,115 is sourced from the original manufacturer or authorized distributors?
All BAT854AW,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT854AW,115 meets industry standards.
7.What is the process for return or replacement of BAT854AW,115?
All BAT854AW,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAT854AW,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT854AW,115 part is unused and in its original packaging.
Return procedure for BAT854AW,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT854AW,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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