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Nexperia USA Inc. BAT854CW,135
- Part No.:
- BAT854CW,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAT854CW,135.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:35,162
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Product details
Overview
BAT854CW,135 from Nexperia is a dual Schottky barrier diode in SOT323 (SC-70) package, rated for 40 V reverse voltage and 200 mA continuous forward current per diode, with 420 mV typical forward voltage at 30 mA and 0.5 µA max reverse leakage at 25 V - optimized for ultra-high-speed switching and low-power handheld protection circuits.
For engineers reviewing the BAT854CW,135 datasheet, BAT854CW,135 pinout, BAT854CW,135 application, or BAT854CW,135 equivalent, key selection criteria include common-cathode dual-diode topology, guard ring stress protection, sub-1 V forward conduction, <20 pF junction capacitance at 1 V, and thermal resistance of 625 K/W on FR4 PCB.
Technical Context
This dual Schottky diode integrates two independent anodes (A1, A2) sharing a common cathode (K1/K2), enabling compact dual-path clamping or polarity-selective blocking without cross-conduction. Its planar structure with integrated guard ring enhances ESD and transient robustness beyond standard Schottky designs.
Operating parameters are specified across −65 °C to 150 °C ambient and junction temperature ranges, with repetitive peak forward current up to 300 mA (tp ≤ 1 s) and non-repetitive surge capability of 1 A (8.3 ms half-sine). Diode capacitance drops from 20 pF at 1 V to <10 pF above 10 V reverse bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - supports rail-to-rail clamping in 3.3 V/5 V/12 V logic and power domains without breakdown. |
| Forward Voltage (VF) | 420 mV @ 30 mA - enables <0.5 V drop in low-voltage signal path or battery-side blocking applications. |
| Reverse Leakage (IR) | 0.5 µA @ 25 V - ensures minimal standby current loss in always-on protection or hold-up circuits. |
| Junction Capacitance (Cd) | 20 pF @ 1 V - preserves signal integrity in <100 MHz digital or RF detector applications. |
| Thermal Resistance (Rth(j-a)) | 625 K/W - requires minimal copper area on FR4 for thermal management in space-constrained layouts. |
| Peak Surge Current (IFSM) | 1 A @ 8.3 ms - withstands IEC 61000-4-5 level 3 surges when used in input-stage protection. |
Pinout & Package
Encapsulated in SC-70 (SOT323) plastic SMD package: 3-pin, 1.3 mm pitch, 2.0 × 1.25 × 0.95 mm body, tin-plated terminations compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Independent input node for first Schottky path; enables discrete routing of dual signals or supplies. |
| 2 | Anode (Diode 2) | Independent input node for second Schottky path; supports dual-rail OR-ing or mirrored protection. |
| 3 | Common Cathode (K1/K2) | Shared output node - simplifies PCB layout by eliminating separate cathode traces and reduces parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring protection | Integrated stress-relief structure prevents edge breakdown under high dv/dt or ESD transients. |
| Low VF / low IR trade-off | 420 mV VF at 30 mA with only 0.5 µA IR - balances efficiency and leakage better than generic Schottkys. |
| Ultra-small footprint | SOT323 package saves >60% board area vs. SOIC-8 dual diodes - critical for wearables and IoT sensors. |
| High-speed switching | Sub-nanosecond recovery time (inferred from <20 pF Cd and Schottky physics) - suitable for >100 MHz clock clamping. |
Applications
| USB Port Protection | Low-Voltage Rail OR-ing |
|---|---|
|
Use Scenario: Preventing backfeed and ESD damage on USB 2.0 data and VBUS lines in portable devices. IC Role / Device Role / Timing Role: Dual-path clamping diode - A1 clamps D+ to VBUS, A2 clamps D− to VBUS, shared cathode tied to TVS ground. Use Value: 420 mV VF avoids signal distortion on 3.3 V logic levels; guard ring sustains ±8 kV contact ESD per IEC 61000-4-2. |
Use Scenario: Selecting between two 3.3 V power sources (e.g., battery and USB) in battery-powered microcontrollers. IC Role / Device Role / Timing Role: Common-cathode OR-ing diode - A1 connects to battery, A2 to USB supply, cathode feeds MCU VDD. Use Value: Low 420 mV forward drop minimizes voltage loss and power dissipation (<13 mW @ 30 mA), extending runtime. |
| RF Detector Biasing | Logic-Level Translation Clamp |
|
Use Scenario: Providing DC bias and RF return path in 2.4 GHz Wi-Fi front-end detector circuits. IC Role / Device Role / Timing Role: Signal-path Schottky clamp - A1 to RF input, cathode to bias network, A2 unused or grounded. Use Value: 20 pF capacitance at 1 V reverse bias maintains impedance match; low IR avoids loading sensitive detector outputs. |
Use Scenario: Level-shifting 1.8 V GPIO signals to 3.3 V peripherals while preventing overvoltage damage. IC Role / Device Role / Timing Role: Bidirectional clamping diode - A1 to 1.8 V net, A2 to 3.3 V net, cathode to 3.3 V rail. Use Value: 420 mV VF ensures fast turn-on during overvoltage events; common cathode eliminates need for two discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F40NXT5G | Same SOT-323 package; 40 V VR; 200 mA IF; but VF = 450 mV @ 30 mA and IR = 2 µA @ 25 V. | Higher leakage limits use in ultra-low-power sleep modes; slightly higher VF increases conduction loss. | Select when legacy ON Semi BOM compatibility required; verify leakage budget in always-on systems. |
| Vishay SDM20U40 | SO-8 package (not SOT-323); 40 V VR; 200 mA IF per diode; VF = 410 mV @ 30 mA; IR = 0.3 µA @ 25 V. | Larger footprint precludes space-constrained designs; lower IR improves standby performance. | Choose for higher-reliability industrial boards where SO-8 solder joint robustness outweighs size penalty. |
Compared with NSR20F40NXT5G and SDM20U40, BAT854CW,135 delivers the best balance of ultra-low leakage (0.5 µA), compact SOT323 packaging, and proven guard ring reliability - making it optimal for consumer wearables and high-density USB-C accessories.
Availability
BAT854CW,135 is available at Aetrix Electronics and suitable for USB port protection, low-voltage rail OR-ing, and RF detector biasing requiring stable component supply and consistent SOT323 form factor across production batches.
Supply support for BAT854CW,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, miniaturization, and manufacturability.
BAT854CW,135 belongs to Nexperia's Schottky diode portfolio designed specifically for space-constrained, low-power, high-speed signal integrity applications in portable and interface electronics.
FAQ
Is BAT854CW,135 automotive qualified?
No. Per Nexperia's revision history (v.3, October 2024), BAT854CW,135 is explicitly designated as non-automotive qualified. It lacks AEC-Q101 stress testing and automotive-grade process controls. For automotive use, Nexperia offers the BAT854CW-Q variant with full qualification documentation.
What is the maximum allowable PCB pad temperature during reflow soldering?
The BAT854CW,135 SOT323 package supports JEDEC J-STD-020D-compliant reflow profiles with peak temperature up to 260 °C for ≤30 seconds. The recommended profile uses ramp rates ≤3 °C/s, preheat 150–200 °C for 60–120 s, and time above liquidus (TAL) of 60–90 s at 235–245 °C.
Can BAT854CW,135 be used in reverse-biased RF coupling applications?
Yes - its 20 pF junction capacitance at 1 V reverse bias and low series resistance enable effective AC coupling up to ~100 MHz. However, capacitance varies nonlinearly with voltage (e.g., ~12 pF at 10 V), so impedance matching must account for bias-dependent Cj in RF paths.
Does the common cathode configuration support independent control of each diode?
No - the cathodes are internally bonded together (K1/K2), so both diodes share the same cathode potential. Independent control requires external circuitry (e.g., separate cathode resistors or active switches); the device does not support individual cathode biasing or isolation.
BAT854CW,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 550 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 nA @ 25 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAT854CW,135 FAQ
1.How can I place an order for BAT854CW,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT854CW,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT854CW,135 reliable?
The price and inventory of BAT854CW,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT854CW,135 is usually 5 days.
3.What payment methods are accepted for BAT854CW,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT854CW,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT854CW,135?
BAT854CW,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT854CW,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT854CW,135?
For technical support, including BAT854CW,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT854CW,135 requirements.
6.How does Aetrix verify that BAT854CW,135 is sourced from the original manufacturer or authorized distributors?
All BAT854CW,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT854CW,135 meets industry standards.
7.What is the process for return or replacement of BAT854CW,135?
All BAT854CW,135 units undergo pre-shipment inspection (PSI). If there is an issue with BAT854CW,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT854CW,135 part is unused and in its original packaging.
Return procedure for BAT854CW,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT854CW,135 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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