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Nexperia USA Inc. BAT854CW-QF

Part No.:
BAT854CW-QF
Manufacturer:
Nexperia USA Inc.
Category:
Diode Arrays
Package:
SC-70, SOT-323
Datasheet:
AetrixBAT854CW-QF.pdf
Description:
DIODE ARR SCHOT 40V 200MA SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,180

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Product details

Overview

BAT854CW-Q from Nexperia is a planar Schottky barrier dual diode in SOT323 (SC-70) package, featuring a common cathode configuration, 40 V reverse voltage rating, 200 mA forward current capability, and 550 mV typical forward voltage at 100 mA - optimized for ultra-high-speed switching and automotive-grade protection circuits.

For engineers reviewing the BAT854CW-Q datasheet, BAT854CW-Q pinout, BAT854CW-Q application, or BAT854CW-Q equivalent, this device delivers verified low-leakage (0.5 µA at 25 V), low-capacitance (20 pF at 1 V), AEC-Q101-qualified performance in space-constrained hand-held and automotive power management designs.

Technical Context

This dual Schottky diode integrates a guard ring for mechanical and electrical stress protection, enabling robust operation under transient conditions. Its common-cathode topology supports independent anode control while sharing a single cathode terminal, reducing PCB footprint versus discrete solutions.

The device operates across –65 °C to +150 °C ambient and junction temperatures, with thermal resistance of 625 K/W (junction-to-ambient, FR4 PCB, single-sided copper), and exhibits pulsed reverse current limiting (0.5 µA at VR = 25 V, tp ≤ 300 µs, δ ≤ 0.02).

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 40 V - maximum blocking capability per diode; defines safe operating range in clamping and reverse-polarity protection.
Forward Current (IF) 200 mA continuous - supports low-power rail steering and signal-level rectification without derating at 25 °C.
Forward Voltage (VF) 550 mV at IF = 100 mA, 25 °C - enables efficient voltage clamping with minimal conduction loss in battery-sensitive systems.
Reverse Current (IR) 0.5 µA at VR = 25 V, pulsed - ensures low leakage in high-impedance sensing and standby power paths.
Diode Capacitance (Cd) 20 pF at VR = 1 V, f = 1 MHz - supports >100 MHz switching in RF detector and high-speed logic interface applications.
Junction Temperature (Tj) 150 °C max - allows sustained operation in under-hood automotive environments and thermally dense PCB layouts.

Pinout & Package

Encapsulated in SOT323 (SC-70), a 3-lead surface-mount plastic package measuring 2.0 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch and tin-plated terminations.

Pin/Terminal Circuit Role Design Meaning
1 Anode (Diode 1) Input terminal for first Schottky junction; connects to source/positive rail in clamping or OR-ing configurations.
2 Anode (Diode 2) Independent input terminal for second Schottky junction; enables dual-path signal routing or redundancy.
3 Common Cathode (K1/K2) Shared output node for both diodes; simplifies layout by eliminating separate cathode traces and reduces parasitic inductance.

Key Features

Feature Design Value
Guard ring protection Integrated structural feature that enhances ESD and mechanical stress immunity, improving reliability in automotive vibration and thermal cycling.
AEC-Q101 qualification Validated for automotive use per Stress Test Qualification for Discrete Semiconductors, covering temperature cycling, HTRB, and ESD.
Low VF / low IR trade-off 550 mV VF at 100 mA and only 0.5 µA IR at 25 V enable simultaneous efficiency and signal integrity in low-voltage logic interfaces.
SOT323 footprint compatibility Standard SC-70 land pattern (2.65 mm × 2.35 mm solder mask opening, 0.55 mm paste stencil) supports automated reflow assembly with IPC-7351 compliance.

Applications

Automotive Door Module Protection USB Port Reverse-Polarity Clamp

Use Scenario: Protecting LIN bus transceivers and window motor drivers from load dump and reverse-battery events in door control units.

IC Role / Device Role / Timing Role: Dual-anode clamping diode providing bidirectional overvoltage suppression at each signal line input.

Use Value: Guard ring and AEC-Q101 qualification ensure survival under ISO 7637-2 Pulse 5a (load dump) and extended temperature cycling (-40 °C to +125 °C).

Use Scenario: Preventing damage to USB 2.0 data lines and VBUS detection circuitry during accidental reverse-connection of external accessories.

IC Role / Device Role / Timing Role: Common-cathode dual Schottky acting as back-to-back clamp to limit differential voltage swing to <1.2 V.

Use Value: 20 pF capacitance and sub-ns recovery time preserve signal integrity up to 480 Mbps without added jitter or reflection.

Hand-Held Medical Sensor Power OR-ing Low-Power IoT Node Voltage Clamping

Use Scenario: Selecting between coin-cell and USB-charger supply rails in portable pulse oximeters while minimizing quiescent current drain.

IC Role / Device Role / Timing Role: Dual-anode OR-ing diode enabling seamless switchover with shared cathode output to system regulator input.

Use Value: 550 mV VF at 100 mA reduces dropout loss by 30% vs. standard silicon diodes, extending battery life by >12% in 24-hour monitoring cycles.

Use Scenario: Clamping GPIO pins and ADC reference inputs against ESD and I/O overvoltage in battery-powered environmental sensor nodes.

IC Role / Device Role / Timing Role: Low-leakage Schottky clamp protecting 12-bit SAR ADC inputs from ±8 kV contact discharge per IEC 61000-4-2.

Use Value: 0.5 µA IR at 25 V prevents reference voltage drift in high-impedance bias networks, maintaining <0.1% measurement error at 25 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky dual diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSR20F40NXT5G Higher IF (400 mA), higher VF (620 mV typ. @ 100 mA), same SOT-323 package and common-cathode pinout. Better suited for higher-current OR-ing but less optimal for low-VF clamping in signal paths. Select when forward current headroom >200 mA is required and 70 mV VF penalty is acceptable.
Vishay SDM20U40 Same VR (40 V), lower IR (0.2 µA @ 25 V), higher Cd (35 pF @ 1 V), SOD-323 package (different footprint). Superior leakage performance for precision analog clamping, but incompatible pin layout and higher capacitance limits speed. Choose for ultra-low-leakage analog protection where board redesign for SOD-323 is feasible.

Compared with NSR20F40NXT5G and SDM20U40, BAT854CW-Q uniquely balances low VF (550 mV), low IR (0.5 µA), and AEC-Q101 qualification in SOT323 - making it optimal for automotive signal clamping and space-constrained dual-rail OR-ing where both efficiency and reliability are critical.

Availability

BAT854CW-Q is available at Aetrix Electronics and suitable for automotive door modules, USB Type-A port protection, hand-held medical sensors, and low-power IoT node voltage clamping requiring stable component supply and long-term lifecycle support.

Supply support for BAT854CW-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency, delivering high-performance, reliable discrete, logic, and MOSFET devices for automotive, industrial, and consumer markets.

BAT854CW-Q belongs to Nexperia's AEC-Q101-qualified Schottky diode portfolio, engineered specifically for high-reliability automotive signal conditioning and compact power management in constrained spaces.

FAQ

Is BAT854CW-Q suitable for hot-swap applications?

Yes. Its 200 mA continuous forward current, 1 A non-repetitive peak forward current (8.3 ms half-sine), and low 550 mV VF enable controlled inrush limiting and rail isolation during live insertion. The guard ring structure also improves robustness against transient overstress during connection events.

What is the thermal derating behavior above 25 °C ambient?

Derating begins at Tamb > 25 °C using Rth(j-a) = 625 K/W. At 85 °C ambient, maximum continuous IF drops to approximately 130 mA to maintain Tj ≤ 150 °C. Full derating curve is defined in Section 8 (Limiting Values) of the official datasheet.

Can BAT854CW-Q replace BAT54C in existing designs?

Yes, with verification. Both are common-cathode dual Schottkys in SOT-23/SOT-323, but BAT854CW-Q offers AEC-Q101 qualification, lower VF (550 mV vs. ~600 mV), and tighter IR (0.5 µA vs. 1–2 µA). Layout adaptation may be needed due to SOT323's smaller body and 1.3 mm pitch.

Does the common cathode configuration support independent reverse-bias operation?

Yes. With anodes biased independently and cathode held at fixed potential, each diode blocks up to 40 V in reverse. However, reverse leakage adds linearly (up to 1.0 µA total at 25 V), and thermal coupling between junctions requires attention in high-power dual-channel operation.

BAT854CW-QF Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io) (per Diode):
200mA
Voltage - Forward (Vf) (Max) @ If:
550 mV @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 nA @ 25 V
Operating Temperature - Junction:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

BAT854CW-QF FAQ

1.How can I place an order for BAT854CW-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT854CW-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT854CW-QF reliable?

The price and inventory of BAT854CW-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT854CW-QF is usually 5 days.

3.What payment methods are accepted for BAT854CW-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT854CW-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT854CW-QF?

BAT854CW-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT854CW-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT854CW-QF?

For technical support, including BAT854CW-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT854CW-QF requirements.

6.How does Aetrix verify that BAT854CW-QF is sourced from the original manufacturer or authorized distributors?

All BAT854CW-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT854CW-QF meets industry standards.

7.What is the process for return or replacement of BAT854CW-QF?

All BAT854CW-QF units undergo pre-shipment inspection (PSI). If there is an issue with BAT854CW-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT854CW-QF part is unused and in its original packaging.

Return procedure for BAT854CW-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAT854CW-QF Tags

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