Nexperia USA Inc. BAT854SW,115
- Part No.:
- BAT854SW,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAT854SW,115.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT323
- Quantity:
- Payment:

- Shipping:

Inventory:113,058
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Product details
Overview
BAT854SW,115 from Nexperia is a dual Schottky barrier diode in SOT323 (SC-70) package, rated for 40 V reverse voltage and 200 mA forward current per diode, with 550 mV forward voltage at 100 mA and 0.5 µA reverse leakage at 25 V. It integrates a guard ring for stress protection and is AEC-Q101 qualified for automotive use.
For engineers reviewing the BAT854SW,115 datasheet, BAT854SW,115 pinout, BAT854SW,115 application, or BAT854SW,115 equivalent, key selection criteria include low VF for efficiency-critical hand-held power rails, low IR for signal integrity in clamping circuits, dual common-cathode/anode configuration for compact bidirectional protection, and thermal resistance of 625 K/W on FR4 PCB.
Technical Context
This dual Schottky diode features a planar structure with integrated guard ring to suppress edge breakdown under transient stress. Its two diodes share terminal 3 (K1/A2), enabling common-cathode (pins 1–3) and common-anode (pins 2–3) configurations within one package.
Designed for ultra-high-speed switching, it delivers 20 pF capacitance at 1 V reverse bias and 1 MHz, with VF ranging from 200 mV (IF = 0.1 mA) to 550 mV (IF = 100 mA), supporting low-power rail steering and fast transient suppression in space-constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - Maximum blocking capability per diode; suitable for 3.3 V/5 V/12 V rail clamping without avalanche risk. |
| Forward Current (IF) | 200 mA continuous - Supports moderate load switching in portable battery management and USB port protection. |
| Forward Voltage (VF) | 550 mV @ 100 mA - Enables <100 mW conduction loss at typical operating point, critical for energy-sensitive designs. |
| Reverse Current (IR) | 0.5 µA @ 25 V - Ensures minimal leakage in high-impedance sensing or standby power paths. |
| Diode Capacitance (Cd) | 20 pF @ 1 V - Low junction capacitance preserves signal rise/fall times in RF detector or ESD clamp applications. |
| Junction Temperature (Tj) | 150 °C max - Allows operation in under-hood automotive environments with derated current above 85 °C ambient. |
Pinout & Package
Encapsulated in SOT323 (SC-70), a 3-lead surface-mount plastic package measuring 2.0 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch and tin-plated copper footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first diode; used in forward conduction path from pin 1 to pin 3. |
| 2 | Cathode (Diode 2) | Output node for second diode; enables reverse-biased clamping when driven from pin 3. |
| 3 | Cathode (Diode 1) / Anode (Diode 2) | Shared terminal enabling dual configuration: common cathode (D1: 1→3, D2: 3→2) or common anode (D1: 3←1, D2: 2←3). |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring protection | Prevents premature edge breakdown during ESD or surge events, improving reliability in unregulated input stages. |
| AEC-Q101 qualification | Validated for automotive-grade temperature cycling, humidity, and mechanical stress-enables direct use in infotainment and body control modules. |
| Low VF across current range | 200–550 mV from 0.1 mA to 100 mA ensures consistent efficiency in both standby and active modes of portable devices. |
| Small SOT323 footprint | 2.0 mm × 1.25 mm area saves >60% board space vs. SOIC-8 dual diodes-ideal for wearables and compact sensor nodes. |
Applications
| USB Port Protection | Automotive Sensor Interface |
|---|---|
Use Scenario: Bidirectional ESD and overvoltage protection on USB 2.0 data lines (D+/D−) and VBUS line. IC Role / Device Role / Timing Role: Dual Schottky clamping diode providing low-capacitance (<20 pF), low-VF path to ground/rail for transient energy diversion. Use Value: Prevents damage to USB transceivers during ±8 kV contact discharge while maintaining signal integrity up to 480 Mbps. |
Use Scenario: Reverse polarity and load dump protection for analog sensor outputs (e.g., pressure, temperature) in engine bay modules. IC Role / Device Role / Timing Role: Dual diode configured as common-cathode clamp to 5 V supply and common-anode clamp to ground. Use Value: Withstands 12 V reverse connection and 40 V load dump spikes without latch-up, meeting ISO 16750-2 pulse 5a requirements. |
| Hand-Held Device Power Rail Steering | Low-Power Signal Level Shifting |
Use Scenario: OR-ing diode for seamless switchover between battery and USB charging input in Bluetooth earbuds. IC Role / Device Role / Timing Role: Two independent Schottky diodes used in series with each power source to prevent backfeed and enable automatic priority selection. Use Value: 550 mV VF minimizes voltage drop and extends runtime; 0.5 µA IR avoids battery drain during sleep mode. |
Use Scenario: Level translation between 1.8 V microcontroller GPIO and 3.3 V peripheral I²C bus in medical patch monitors. IC Role / Device Role / Timing Role: Diode-connected configuration (anode to 1.8 V, cathode to 3.3 V line) to shift logic high threshold. Use Value: 200 mV VF at 0.1 mA enables accurate 1.8 V → 3.3 V translation with <100 ns propagation delay and no active components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky barrier dual diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS40201MR6T1G | Same SOT-363 package; higher IF (300 mA), but VF = 600 mV @ 100 mA and IR = 2 µA @ 25 V. | Higher leakage limits use in ultra-low-power sleep circuits; better suited for higher-current charge-pump biasing. | Select when higher forward current headroom is needed and 0.5 µA IR is not mandatory. |
| Vishay VS-2EDH02-M3/84A | SOT-23-3 package; single-diode topology; VR = 40 V, VF = 450 mV @ 100 mA, IR = 0.2 µA @ 25 V. | Lacks dual-diode integration; requires two devices for bidirectional clamping, increasing layout area and BOM count. | Choose only if lowest possible IR is critical and dual functionality can be implemented discretely. |
Compared with NSS40201MR6T1G and VS-2EDH02-M3/84A, BAT854SW,115 uniquely balances ultra-low IR (0.5 µA), compact dual-diode integration in SOT323, and AEC-Q101 qualification-making it optimal for space- and reliability-constrained automotive and portable electronics where leakage and footprint are primary constraints.
Availability
BAT854SW,115 is available at Aetrix Electronics and suitable for USB port protection, automotive sensor interface, and hand-held device power rail steering requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for BAT854SW,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with core expertise in Schottky diodes, MOSFETs, and ESD protection solutions.
The BAT854SW belongs to Nexperia's AEC-Q101-qualified Schottky diode family, engineered specifically for automotive and portable electronics demanding low VF, low IR, and robust transient immunity in miniaturized packages.
FAQ
What is the maximum junction temperature and how does it affect thermal design?
The BAT854SW,115 has a maximum junction temperature of 150 °C. With a thermal resistance of 625 K/W on standard FR4 PCB, dissipating 100 mW raises Tj by 62.5 °C above ambient. For reliable operation at 85 °C ambient, derate IF to ~150 mA to keep Tj ≤ 150 °C-verified via Figure 1 VF vs. IF curves at elevated temperatures.
Can BAT854SW,115 be used in reverse-biased ESD protection without external resistors?
Yes-its 40 V VR rating and guard ring structure allow direct placement between I/O line and VCC/GND without series resistors in Class 1B/2 ESD protection per IEC 61000-4-2. The 20 pF capacitance at 1 V ensures <1 ns RC time constant with typical PCB trace impedance, preserving signal bandwidth up to 100 MHz.
How does the shared pin (pin 3) configuration impact PCB layout routing?
Pin 3 serves as both cathode of D1 and anode of D2, enabling compact dual-direction clamping. Layout must avoid routing high-noise signals adjacent to pin 3, as it carries return current for both diodes. Use separate thermal pads for pins 1 and 2, and ensure pin 3 pad connects directly to solid ground or supply plane to minimize inductance during transient events.
Is BAT854SW,115 compatible with lead-free reflow profiles per JEDEC J-STD-020?
Yes-BAT854SW,115 is qualified for lead-free reflow with peak temperature up to 260 °C (per Figure 5 footprint). Its SOT323 package withstands 60-second exposure above 220 °C, matching standard Level 1 moisture sensitivity. No pre-bake required for dry-packed reels shipped in sealed moisture-barrier bags.
BAT854SW,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 550 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 nA @ 25 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAT854SW,115 FAQ
1.How can I place an order for BAT854SW,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT854SW,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT854SW,115 reliable?
The price and inventory of BAT854SW,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT854SW,115 is usually 5 days.
3.What payment methods are accepted for BAT854SW,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT854SW,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT854SW,115?
BAT854SW,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT854SW,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT854SW,115?
For technical support, including BAT854SW,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT854SW,115 requirements.
6.How does Aetrix verify that BAT854SW,115 is sourced from the original manufacturer or authorized distributors?
All BAT854SW,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT854SW,115 meets industry standards.
7.What is the process for return or replacement of BAT854SW,115?
All BAT854SW,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAT854SW,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT854SW,115 part is unused and in its original packaging.
Return procedure for BAT854SW,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT854SW,115 Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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