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Nexperia USA Inc. BAT854SW-QX
- Part No.:
- BAT854SW-QX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAT854SW-QX.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:4,854
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Product details
Overview
BAT854SW-QX from Nexperia is a dual Schottky barrier diode in SOT323 (SC-70) package, rated for 40 V reverse voltage and 200 mA forward current per diode, with 550 mV typical forward voltage at 100 mA and 0.5 µA reverse leakage at 25 V, used in automotive-grade protection and clamping circuits.
For engineers reviewing the BAT854SW-QX datasheet, BAT854SW-QX pinout, BAT854SW-QX application, or BAT854SW-QX equivalent, this device supports ultra-high-speed switching, low-power handheld systems, and AEC-Q101-compliant automotive signal conditioning where low VF, low IR, and guard ring stress protection are critical selection criteria.
Technical Context
This dual Schottky diode integrates two independent junctions sharing a common terminal (Pin 3 = K1/A2), enabling compact bidirectional clamping or series/anti-parallel configurations. Its planar structure with integrated guard ring enhances ESD and transient robustness without external components.
The device operates across −65 °C to +150 °C ambient, with 625 K/W junction-to-ambient thermal resistance on FR4 PCB, and exhibits 20 pF capacitance at 1 V reverse bias - key for RF-sensitive signal routing and fast-switching power rail protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - defines maximum allowable blocking voltage before breakdown in protection/clamping roles |
| Forward Current (IF) | 200 mA per diode - sets continuous DC load-handling capability in low-power supply paths |
| Forward Voltage (VF) | 550 mV @ 100 mA, 25 °C - enables <100 mW conduction loss in 3.3 V/5 V rail clamping |
| Reverse Current (IR) | 0.5 µA @ 25 V, pulsed - ensures minimal leakage-induced battery drain in always-on hand-held applications |
| Diode Capacitance (Cd) | 20 pF @ 1 V, 1 MHz - supports <100 MHz signal integrity in ESD protection paths without resonance issues |
| Junction Temperature (Tj) | 150 °C max - allows operation in under-hood automotive environments with localized heating |
Pinout & Package
Encapsulated in SOT323 (SC-70), a 2.0 mm × 1.25 mm × 0.95 mm surface-mount plastic package with 1.3 mm lead pitch and single-sided copper thermal pad compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for first diode's forward conduction path; connects to protected signal or supply rail |
| 2 | Cathode of Diode 2 (K2) | Return node for second diode; used in anti-parallel configuration or independent clamping |
| 3 | Cathode of Diode 1 / Anode of Diode 2 (K1, A2) | Shared terminal enabling compact dual-diode topologies - e.g., bidirectional TVS or level-shift clamping |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring protection | Integrated stress mitigation structure prevents edge breakdown during ESD or voltage transients |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and ESD testing per JESD22 |
| Low VF / Low IR trade-off | 550 mV VF and 0.5 µA IR achieved simultaneously - rare in Schottky diodes below 1 A rating |
| SOT323 footprint | Enables <2.5 mm² board area usage - suitable for space-constrained modules like ADAS sensors and infotainment USB ports |
Applications
| Automotive Signal Clamping | USB Port ESD Protection |
|---|---|
|
Use Scenario: Protecting CAN FD or LIN bus transceivers from ±25 kV contact ESD events. IC Role / Device Role / Timing Role: Dual-diode clamp between data line and VCC/GND, leveraging shared Pin 3 for symmetrical bidirectional conduction. Use Value: 0.5 µA IR prevents signal distortion during idle; 20 pF Cd avoids USB 2.0 eye diagram degradation. |
Use Scenario: Safeguarding Type-A USB 2.0 D+/D− lines in infotainment head units. IC Role / Device Role / Timing Role: Low-capacitance shunt clamp to ground/VBUS, using discrete anode/cathode pins for independent line control. Use Value: 550 mV VF ensures clamping activates before transceiver damage threshold; AEC-Q101 ensures field reliability. |
| Handheld Device Power Rail Blocking | Low-Power Sensor Biasing |
|
Use Scenario: Isolating backup battery from main Li-ion supply in medical wearables. IC Role / Device Role / Timing Role: Reverse-polarity blocking diode (Diode 1) with ultra-low VF to minimize voltage drop in 3.3 V supply path. Use Value: 200 mA IF rating supports peak sensor burst currents; 0.5 µA IR extends shelf life beyond 5 years. |
Use Scenario: Providing stable bias to MEMS microphone or Hall-effect sensor in automotive cabin modules. IC Role / Device Role / Timing Role: Low-noise voltage reference feed via Diode 2, exploiting low IR to avoid bias drift over temperature. Use Value: 150 °C Tj rating accommodates under-dash mounting; guard ring prevents latch-up during ignition noise spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky barrier dual diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS40201MR6T1G | Same SOT-323 package; 40 V VR, but 300 mA IF and higher VF (620 mV @ 100 mA) | Higher current handling suits 5 V USB-C PD sink paths; less optimal for ultra-low-power standby | Select when forward current margin >200 mA is required and 70 mV VF penalty is acceptable |
| Vishay VS-2EDH01HM3/85A | DO-214AC package; 40 V VR, 1 A IF, but 10× larger footprint and 100× higher IR (50 µA) | Designed for high-energy surge suppression, not signal-level clamping or space-constrained layouts | Choose only for industrial AC-line transient protection where size and leakage are secondary |
Compared with NSS40201MR6T1G and VS-2EDH01HM3/85A, BAT854SW-QX uniquely balances ultra-low leakage, compact SOT323 size, and AEC-Q101 compliance - making it optimal for automotive signal integrity and battery-sensitive portable electronics where all three attributes are non-negotiable.
Availability
BAT854SW-QX is available at Aetrix Electronics and suitable for automotive signal clamping, USB port ESD protection, and low-power handheld device power rail blocking requiring stable component supply across production lifecycles.
Supply support for BAT854SW-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions for automotive, industrial, and mobile markets.
BAT854SW-QX belongs to Nexperia's AEC-Q101-qualified Schottky diode product line, engineered specifically for automotive signal integrity, ESD resilience, and ultra-low-power system protection in harsh thermal environments.
FAQ
What is the maximum pulsed forward current rating for BAT854SW-QX?
The non-repetitive peak forward current (IFSM) is 1 A for an 8.3 ms half-sine pulse at 25 °C initial junction temperature, per IEC 60134 JEDEC test conditions. This rating supports short-duration surge events such as hot-swap transients or load dump spikes in automotive subsystems.
Can BAT854SW-QX be used in bidirectional TVS configurations?
Yes - its pinout (A1, K2, K1/A2) enables direct implementation of a bidirectional clamping circuit by connecting A1 and K2 to the protected line and K1/A2 to VCC or GND. The guard ring and low capacitance ensure effective ESD immunity without signal distortion.
Is the 0.5 µA reverse current measured under DC or pulsed conditions?
The 0.5 µA IR value is specified under pulsed conditions: VR = 25 V, pulse width ≤300 µs, duty cycle ≤0.02, and ambient temperature 25 °C. Under steady-state DC bias, measured IR is typically <0.1 µA, supporting multi-year battery retention in always-on IoT nodes.
Does BAT854SW-QX require derating above 85 °C ambient?
Yes - the absolute maximum junction temperature is 150 °C, but the recommended operating ambient range is −65 °C to +150 °C. At 125 °C ambient, forward voltage increases to ~620 mV and reverse current rises to ~5 µA; design margins must account for these shifts in under-hood applications.
BAT854SW-QX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 550 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 nA @ 25 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAT854SW-QX FAQ
1.How can I place an order for BAT854SW-QX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT854SW-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT854SW-QX reliable?
The price and inventory of BAT854SW-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT854SW-QX is usually 5 days.
3.What payment methods are accepted for BAT854SW-QX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT854SW-QX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT854SW-QX?
BAT854SW-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT854SW-QX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT854SW-QX?
For technical support, including BAT854SW-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT854SW-QX requirements.
6.How does Aetrix verify that BAT854SW-QX is sourced from the original manufacturer or authorized distributors?
All BAT854SW-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT854SW-QX meets industry standards.
7.What is the process for return or replacement of BAT854SW-QX?
All BAT854SW-QX units undergo pre-shipment inspection (PSI). If there is an issue with BAT854SW-QX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT854SW-QX part is unused and in its original packaging.
Return procedure for BAT854SW-QX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT854SW-QX Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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