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Nexperia USA Inc. BAT854W,115

Part No.:
BAT854W,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAT854W,115.pdf
Description:
DIODE SCHOTTKY 40V 200MA SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:71,716

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Product details

Overview

BAT854W,115 from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, rated at 40 V reverse voltage and 200 mA forward current, featuring 550 mV forward voltage at 100 mA and 0.5 µA reverse current at 25 V, used in ultra-high-speed switching and low-power handheld protection circuits.

For engineers reviewing the BAT854W,115 datasheet, BAT854W,115 pinout, BAT854W,115 application, or BAT854W,115 equivalent, key selection criteria include low VF for efficiency, low IR for leakage-sensitive clamping, SC-70 package footprint constraints, and guard ring reliability in transient-prone interfaces.

Technical Context

This discrete Schottky diode employs a planar junction structure with an integrated guard ring to enhance ESD and surge robustness without compromising switching speed. Its low barrier height yields sub-550 mV conduction at 100 mA while maintaining <0.5 µA leakage at 25 V.

Thermal resistance of 625 K/W (junction-to-ambient, FR4 single-sided copper) defines its power dissipation limit in compact layouts. The device operates across −65 °C to +150 °C ambient and junction temperatures, supporting industrial and portable designs.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 40 V - Maximum DC blocking capability before breakdown; sets clamping headroom in 3.3 V/5 V rail protection.
Forward Current (IF) 200 mA - Continuous DC current rating; supports signal-level and low-power supply path applications.
Forward Voltage (VF) 550 mV @ 100 mA, 25 °C - Enables >95% efficiency in 3.3 V logic-level clamping or reverse polarity protection.
Reverse Current (IR) 0.5 µA @ 25 V, pulsed - Ensures minimal leakage in battery-backed or high-impedance sensing nodes.
Diode Capacitance (Cd) 20 pF @ 1 V, 1 MHz - Low capacitance preserves signal integrity in RF detector or high-speed data line clamping.
Junction Temperature (Tj) 150 °C - Specifies maximum allowable die temperature under sustained load; constrains thermal design margin.

Pinout & Package

Encapsulated in SOT323 (SC-70), a 2.0 mm × 1.25 mm × 0.95 mm surface-mount plastic package with 1.3 mm lead pitch and tin-plated terminations.

Pin/Terminal Circuit Role Design Meaning
1 Anode (A) Forward current entry point; connects to higher-potential node in clamping or rectification paths.
2 Not Connected (n.c.) Internally isolated terminal; must remain unconnected on PCB to avoid parasitic coupling or mechanical stress.
3 Cathode (K) Forward current exit point; ties to reference or lower-potential node; primary return path for protection current.

Key Features

Feature Design Value
Guard ring protection Integrated diffusion guard ring improves ESD robustness (IEC 61000-4-2 Level 4) and transient immunity without added external components.
Low forward voltage 550 mV @ 100 mA enables efficient operation in 3.3 V systems where voltage headroom is constrained.
Low reverse leakage 0.5 µA @ 25 V ensures minimal standby current drain in battery-powered devices with long sleep cycles.
Small-footprint SOT323 2.0 mm × 1.25 mm body allows placement in space-constrained locations such as USB-C port protection or sensor interface routing.

Applications

USB Port Protection Low-Power Sensor Interface

Use Scenario: Clamping ESD transients on USB D+/D− lines during hot-plug events.

IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between data line and ground.

Use Value: 20 pF capacitance avoids signal degradation at 480 Mbps; guard ring withstands ±8 kV contact discharge per IEC 61000-4-2.

Use Scenario: Reverse polarity protection for 3.3 V analog sensor supply rails.

IC Role / Device Role / Timing Role: Series-blocking diode preventing damage from miswired connectors.

Use Value: 550 mV drop adds only 16.5 mW loss at 30 mA sensor current; 0.5 µA leakage avoids offset drift in µA-range bias networks.

RF Detector Circuit Handheld Device Power Management

Use Scenario: Demodulating RF envelope signals in 2.4 GHz ISM-band receivers.

IC Role / Device Role / Timing Role: Signal-path Schottky detector diode converting RF to baseband DC.

Use Value: Low Cd (20 pF) and fast recovery enable accurate detection up to 1 GHz; low VF improves sensitivity at weak signal levels.

Use Scenario: Isolating backup coin-cell supply from main Li-ion battery in smart remotes.

IC Role / Device Role / Timing Role: OR-ing diode enabling seamless switchover without voltage drop-induced brownout.

Use Value: 200 mA rating handles peak remote transmit current; 0.5 µA IR prevents measurable coin-cell self-discharge over 10-year shelf life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSR0230HT1G 30 V VR, 200 mA IF, 450 mV VF @ 100 mA, no guard ring Lacks integrated guard ring; lower VR limits use in 5 V rail clamping Prefer when lower VF is critical and ESD stress is managed externally.
Vishay VS-2EDH01HM3/85A 45 V VR, 200 mA IF, 600 mV VF @ 100 mA, SOD-323 package Slightly larger SOD-323 footprint (2.7 mm × 1.7 mm); 50 mV higher VF increases conduction loss Choose when higher VR margin is required and board space permits larger package.

Compared with BAT854W,115, NSR0230HT1G trades guard ring protection for lower VF in 3.3 V systems, while VS-2EDH01HM3/85A offers higher VR at the cost of VF and footprint-making BAT854W,115 optimal for space-constrained, ESD-exposed 5 V interfaces.

Availability

BAT854W,115 is available at Aetrix Electronics and suitable for USB port protection, low-power sensor interfaces, RF detector circuits, and handheld device power management requiring stable component supply and consistent SOT323 packaging.

Supply support for BAT854W,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, headquartered in Nijmegen, Netherlands.

The BAT854W belongs to Nexperia's Schottky diode portfolio designed for ultra-low VF, low IR, and robust transient handling in portable and interface protection applications.

FAQ

Is BAT854W,115 automotive qualified?

No. Per Nexperia's revision history, BAT854W was explicitly changed to non-automotive qualification in July 2023. It is not tested to AEC-Q101 and lacks automotive-grade process controls or extended temperature validation beyond its stated −65 °C to +150 °C operating range.

What is the meaning of 'n.c.' on Pin 2?

Pin 2 is internally not connected-no bond wire or silicon connection exists. It must remain unconnected on the PCB layout to prevent mechanical stress on the die or unintended parasitic coupling; soldering it risks cracking the package or altering thermal performance.

Can BAT854W,115 replace BAT54S in existing designs?

No. BAT54S is a dual-series Schottky in SOT363 with shared cathode configuration, while BAT854W,115 is a single diode with anode/cathode/n.c. pinout in SOT323. Pin compatibility, electrical characteristics (e.g., 30 V vs. 40 V VR), and thermal resistance differ significantly-requiring full schematic and layout review.

How does the guard ring affect PCB layout?

The guard ring requires no special layout but mandates strict adherence to the recommended SC-70 footprint (Fig. 5): 0.55 mm pad width, 0.6 mm length, and 1.325 mm center-to-center spacing. Deviations risk solder bridging or insufficient thermal relief, degrading the guard ring's effectiveness against localized ESD injection.

BAT854W,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
550 mV @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 nA @ 25 V
Capacitance @ Vr, F:
20pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323
Operating Temperature - Junction:
150°C (Max)

BAT854W,115 FAQ

1.How can I place an order for BAT854W,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT854W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT854W,115 reliable?

The price and inventory of BAT854W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT854W,115 is usually 5 days.

3.What payment methods are accepted for BAT854W,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT854W,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT854W,115?

BAT854W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT854W,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT854W,115?

For technical support, including BAT854W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT854W,115 requirements.

6.How does Aetrix verify that BAT854W,115 is sourced from the original manufacturer or authorized distributors?

All BAT854W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT854W,115 meets industry standards.

7.What is the process for return or replacement of BAT854W,115?

All BAT854W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAT854W,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT854W,115 part is unused and in its original packaging.

Return procedure for BAT854W,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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