Diodes Incorporated BAV116T-7

Overview

BAV116T-7 from Diodes Incorporated is an ultra-low-leakage surface-mount silicon switching diode in SOD523 package, rated for 85 V peak repetitive reverse voltage (V_RRM), 200 mA forward current (I_F), and exhibiting only 0.2 nA reverse leakage at 75 V and 25°C. It delivers low capacitance (1.2 pF typ. at 0 V), fast recovery (0.6 µs typ.), and is optimized for precision signal clamping and high-impedance sampling circuits in battery-powered instrumentation.

For engineers reviewing the BAV116T-7 datasheet, BAV116T-7 pinout, BAV116T-7 application, or BAV116T-7 equivalent, key selection criteria include verified ultra-low IR (<0.3 nA @ 75 V), thermal resistance (R_θJA = 450 °C/W), SOD523 mechanical compatibility, and its role in low-power analog front-end protection where leakage-induced offset must be minimized.

Technical Context

This diode employs a planar-diffused silicon junction optimized for minimal generation-recombination current, enabling sub-nanoampere reverse leakage across -55°C to +150°C. Its 0.6 µs typical reverse recovery time (t_RR) supports moderate-speed switching up to ~1 MHz in sample-and-hold or RF detector applications.

The SOD523 package's low thermal resistance to soldering point (R_θJS = 120 °C/W) and 280 mW power dissipation rating allow operation at elevated ambient temperatures when mounted per AP02001 pad layout, with derating beginning above 25°C per the published curve.

Key Specifications

Pinout & Package

Package: SOD523 - ultra-compact surface-mount plastic case (1.6 × 0.8 × 0.6 mm), moisture sensitivity level 1, matte tin–plated alloy 42 leadframe, cathode identified by band marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-leakage diode applications.

Compared with BAV199LT1G and 1N4148WS, the BAV116T-7 uniquely satisfies sub-nanoampere leakage requirements in space-constrained analog signal chains, where its SOD523 size and 0.2 nA IR enable performance unattainable with larger or higher-leakage alternatives.

Availability

BAV116T-7 is available at Aetrix Electronics and suitable for battery-powered sensor front-ends, RF signal detectors, and precision sample-and-hold circuits requiring stable component supply with guaranteed long-term availability.

Supply support for BAV116T-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The BAV116T-7 belongs to Diodes' advanced signal diode product line, engineered specifically for ultra-low-leakage, high-speed signal conditioning in portable and precision analog systems.

FAQ

What is the maximum operating temperature for BAV116T-7?

The BAV116T-7 is rated for junction and storage temperatures from -65°C to +150°C. At 150°C, reverse leakage rises to 3.0 nA at 75 V, and power derating reduces allowable dissipation to ~70 mW. Operation within this range requires adherence to the AP02001 pad layout for thermal performance.

Is BAV116T-7 compatible with lead-free reflow processes?

Yes - BAV116T-7 is fully RoHS-compliant, lead-free, and halogen/antimony-free ("Green"). Its matte tin finish meets MIL-STD-202 Method 208 solderability requirements and withstands standard Pb-free reflow profiles (peak 260°C, 10-second dwell) without degradation.

How does BAV116T-7 differ from standard 1N4148 diodes?

Unlike 1N4148 variants, BAV116T-7 offers 25× lower leakage (0.2 nA vs. 5–25 nA), 2× lower capacitance (1.2 pF vs. 2–4 pF), and a smaller SOD523 package. These differences make it suitable for precision analog and low-power RF applications where 1N4148 leakage and capacitance would degrade performance.

Can BAV116T-7 be used in reverse-biased Zener mode?

No - BAV116T-7 is a standard PN junction switching diode, not a Zener. Its specified reverse breakdown (V_(BR)R = 85 V min) is a destructive limit, not a regulated voltage. It must never be operated continuously in reverse breakdown; use only for clamping, protection, or rectification within rated V_RRM.