Diodes Incorporated BAV116W-13-F

Overview

BAV116W-13-F from Diodes Incorporated is a surface-mount low-leakage silicon switching diode in SOD-123 package, rated for 130 V peak reverse voltage, 215 mA forward current, and exhibiting only 5 nA reverse leakage at 75 V and 25°C. It serves as a precision clamping or signal-level protection device in high-impedance analog front-ends and timing circuits.

For engineers reviewing the BAV116W-13-F datasheet, BAV116W-13-F pinout, BAV116W-13-F application, or BAV116W-13-F equivalent, key selection criteria include ultra-low IR (5 nA @ 75 V), fast trr (3.0 µs), tight VF consistency across temperature, and RoHS-compliant green packaging suitable for space-constrained, low-power sensing nodes.

Technical Context

This diode operates as a unidirectional voltage clamp with cathode-band polarity marking, optimized for low-current signal routing where reverse leakage directly impacts measurement accuracy. Its 2.4 pF typical junction capacitance and 3.0 µs reverse recovery time support stable operation in 1–10 MHz sampling or clock conditioning paths.

The SOD-123 package enables automated placement while maintaining thermal resistance of 500°C/W on FR-4, allowing continuous operation up to +150°C ambient when derated per Figure 1. The device uses annealed matte tin over Alloy 42 leadframe for reliable solderability and halogen-free molding compound compliant with UL 94V-0.

Key Specifications

Pinout & Package

SOD-123 surface-mount package: 2-terminal, single-diode configuration with molded plastic body, cathode band marking, and matte tin-plated Alloy 42 leads. Dimensions: 3.7 mm × 1.55 mm × 1.0 mm (L × W × H); weight ≈ 0.01 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage switching diode applications.

Compared with BAS16W-7-F and 1N4148W-7-F, the BAV116W-13-F delivers superior leakage control and higher voltage margin-critical for battery-powered sensor nodes and metrology-grade signal conditioning where nanoscale current errors directly impact measurement validity.

Availability

BAV116W-13-F is available at Aetrix Electronics and suitable for photodiode bias networks, crystal oscillator load stabilization, and precision voltage reference clamping requiring stable component supply across automotive cabin sensors, industrial process monitors, and portable medical diagnostics.

Supply support for BAV116W-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAV116W belongs to Diodes' precision switching diode product line, engineered specifically for low-leakage, high-speed signal integrity in instrumentation, timing, and sensor interface applications-not general-purpose rectification.

FAQ

What is the maximum junction temperature for continuous operation?

The BAV116W-13-F has an absolute maximum junction temperature of +150°C, with continuous operation limited by ambient temperature and PCB thermal design. Derating begins at +25°C ambient per Figure 1: power dissipation drops linearly to zero at +150°C ambient when mounted on FR-4 with recommended pad layout.

Is the BAV116W-13-F suitable for use in automotive applications?

Yes-the device is qualified to AEC-Q101 and operates across -65°C to +150°C, meeting temperature and reliability requirements for under-hood and cabin electronics. Its green, halogen-free construction also satisfies automotive OEM material compliance mandates such as GMW3172 and Ford WSS-M99P9999-A1.

How does the SOD-123 package affect thermal performance?

The SOD-123 package delivers a thermal resistance of 500°C/W junction-to-ambient on standard FR-4 with Diodes Inc.'s recommended copper pad layout. This allows 250 mW dissipation at +25°C ambient but requires careful PCB copper area allocation to sustain >100 mW at elevated temperatures.

Can the BAV116W-13-F replace the 1N4148 in existing designs?

It can substitute in most SOD-123 layouts, but only if the design requires ≥130 V reverse rating and ≤5 nA leakage. While pin-compatible, its tighter leakage spec and higher VRRM may alter transient response or bias stability in legacy 1N4148 circuits-validation under worst-case temperature and voltage conditions is required.