Diodes Incorporated BAV116W-7

Overview

BAV116W-7 from Diodes Incorporated is a surface-mount silicon switching diode optimized for low-leakage signal routing and clamping in precision analog and timing circuits, featuring 130 V peak reverse voltage, ≤5 nA leakage at 75 V/25°C, 3.0 µs reverse recovery time, and SOD-123 package. It serves in ESD protection networks, sample-and-hold front-ends, and low-current biasing paths where leakage-induced offset error must be minimized.

For engineers reviewing the BAV116W-7 datasheet, BAV116W-7 pinout, BAV116W-7 application, or BAV116W-7 equivalent, key selection criteria include verified IR ≤5 nA @ 75 V/25°C, VF ≤1.0 V @ 10 mA/25°C, trr ≤3.0 µs under defined test conditions, SOD-123 mechanical compatibility, and RoHS-compliant lead-free plating per MIL-STD-202.

Technical Context

This diode operates as a unidirectional, low-capacitance (CT = 2.4–5 pF @ 0 V) PN junction device with fast recovery characteristics suitable for high-frequency signal steering and transient suppression. Its thermal resistance of 500 °C/W (R_θJA) and 250 mW power dissipation rating are validated on FR-4 PCB with manufacturer-recommended pad layout.

The device exhibits temperature-stable leakage behavior-IR rises to only 80 nA at 75 V/125°C-and forward voltage remains tightly bounded across operating current (0.90–1.25 V from 1–150 mA), enabling predictable biasing in thermally varying environments.

Key Specifications

Pinout & Package

SOD-123 surface-mount plastic package with cathode band marking; 2-terminal configuration; 0.01 g mass; UL 94V-0 rated molding compound; matte tin-plated alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage switching diode applications.

Compared with BAV103W-7 and 1N4148W-7, the BAV116W-7 delivers superior voltage margin, lower leakage, and faster recovery-making it the preferred choice for precision analog protection, high-voltage signal routing, and thermally stable bias networks where parameter tightness directly impacts system accuracy.

Availability

BAV116W-7 is available at Aetrix Electronics and suitable for high-reliability analog signal conditioning, precision sensor interface design, and low-power timing circuit implementation requiring stable component supply and full RoHS/halogen-free compliance.

Supply support for BAV116W-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, energy-efficient components for industrial, computing, consumer, and communications markets.

The BAV116W belongs to Diodes' low-leakage switching diode product line, engineered specifically for applications demanding minimal reverse current, fast recovery, and robust thermal performance in space-constrained SMT designs.

FAQ

What is the maximum reverse voltage rating for BAV116W-7?

The BAV116W-7 has a peak repetitive reverse voltage (V_RRM) rating of 130 V, verified per DS30291 Rev. 12–2. This rating applies under continuous operation at T_A = 25°C with proper PCB thermal relief. Derating is required above 25°C ambient per the published power derating curve.

How does the leakage current behave at elevated temperature?

At 75 V reverse bias, leakage increases from ≤5 nA at 25°C to ≤80 nA at 125°C, as specified in the Electrical Characteristics table. This 16× increase is typical for silicon PN diodes and remains within design margins for most precision analog applications.

Is BAV116W-7 compatible with lead-free reflow soldering processes?

Yes-BAV116W-7 uses matte tin-plated alloy 42 leadframe and is qualified for lead-free reflow per JEDEC J-STD-020 moisture sensitivity Level 1. Its SOD-123 package withstands peak temperatures up to 260°C for ≤60 seconds without degradation.

Can BAV116W-7 replace 1N4148 in high-precision circuits?

Only if leakage and speed requirements align: BAV116W-7 offers lower leakage (5 nA vs. 25 nA) and faster recovery (3.0 µs vs. 4.0 µs) than 1N4148W-7, but shares identical SOD-123 footprint. Verify V_RRM sufficiency (130 V vs. 100 V) and thermal layout compatibility before substitution.