Diodes Incorporated BAV116W-7-F

Overview

BAV116W-7-F from Diodes Incorporated is a surface-mount low-leakage silicon switching diode in SOD-123 package, rated for 130 V peak repetitive reverse voltage, 215 mA forward continuous current, and exhibiting only 5 nA leakage at 75 V and 25°C. It serves as a precision clamping or signal-level protection device in high-impedance analog front-ends and low-power sensor interfaces.

For engineers reviewing the BAV116W-7-F datasheet, BAV116W-7-F pinout, BAV116W-7-F application, or BAV116W-7-F equivalent, key selection criteria include ultra-low IR (5 nA @ 75 V), fast trr (3.0 µs), tight VF consistency across temperature, and SOD-123 footprint compatibility with space-constrained PCB layouts.

Technical Context

This diode operates as a unidirectional PN junction rectifier optimized for low-current signal integrity rather than power handling. Its design emphasizes minimal reverse leakage and stable forward conduction over -65°C to +150°C, enabled by controlled doping and passivated junction geometry.

The device uses an alloy 42 leadframe with matte tin plating and green molding compound (UL 94V-0), supporting automated placement and reflow soldering per J-STD-020 Level 1 moisture sensitivity. Polarity is marked by a cathode band on the SOD-123 body.

Key Specifications

Pinout & Package

SOD-123 is a two-terminal surface-mount plastic package with cathode band marking; dimensions: 3.7 mm × 1.55 mm × 1.0 mm (L × W × H), weight ≈ 0.01 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage diode applications.

Compared with BAV103W-7-F and 1N4148W-7-F, the BAV116W-7-F delivers superior voltage margin (+30 V), fivefold lower leakage, and faster recovery-making it the preferred choice for high-accuracy, high-reliability signal conditioning where leakage-induced error or voltage headroom is critical.

Availability

BAV116W-7-F is available at Aetrix Electronics and suitable for instrumentation signal clamping, low-power sensor biasing, RF detector circuits, and ESD-sensitive interface protection requiring stable component supply and full RoHS/Green compliance.

Supply support for BAV116W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAV116W belongs to Diodes' precision switching diode product line, engineered specifically for applications demanding ultra-low leakage, stable VF, and reliable performance in compact, thermally constrained environments.

FAQ

What is the maximum operating temperature for BAV116W-7-F?

The BAV116W-7-F has a specified operating junction temperature range of -65°C to +150°C. Its thermal resistance (RθJA) is 500°C/W on standard FR-4 PCB, so sustained operation above 125°C ambient requires derating power dissipation per Figure 1 in the datasheet. The device remains functional but must not exceed 150°C junction temperature under any condition.

Is BAV116W-7-F compatible with lead-free reflow processes?

Yes. BAV116W-7-F features matte tin-plated terminals over alloy 42 leadframe and is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its moisture sensitivity level is Class 1, meaning it can be stored indefinitely at ≤30°C/60% RH without baking prior to assembly. The green molding compound meets UL 94V-0 flammability rating.

How does the leakage current change at elevated temperature?

Leakage increases with temperature: IR is 5 nA at 75 V and 25°C, rising to 80 nA at 75 V and 125°C (per datasheet Table "Electrical Characteristics"). This 16× increase reflects typical silicon PN junction behavior and must be accounted for in high-temperature bias networks where leakage-induced error could exceed system tolerance.

Can BAV116W-7-F replace 1N4148 in existing designs?

It can replace 1N4148 in most SOD-123 footprints, but only where its higher VRRM (130 V vs. 100 V) and lower IR (5 nA vs. 25 nA) provide benefit. Due to tighter VF distribution and faster trr, it improves performance in precision clamping and RF detection-but requires validation in high-speed switching applications where subtle timing differences may affect system behavior.