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Diodes Incorporated BAV116W-7-G

Part No.:
BAV116W-7-G
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
SOD-123
Datasheet:
AetrixBAV116W-7-G.pdf
Description:
DIODE GEN PURP SOD123
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,855

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Product details

Overview

BAV116W-7-G from Diodes Incorporated is a surface-mount low-leakage silicon switching diode in SOD-123 package, rated for 130 V peak reverse voltage, 215 mA forward current, and exhibiting only 5 nA leakage at 75 V and 25°C. It serves as a precision clamping or signal-level protection device in high-impedance analog front-ends and timing circuits.

For engineers reviewing the BAV116W-7-G datasheet, BAV116W-7-G pinout, BAV116W-7-G application, or BAV116W-7-G equivalent, key selection criteria include ultra-low IR (5 nA @ 75 V), fast trr (3.0 µs), low VF (1.0 V @ 10 mA), thermal stability up to +150°C, and RoHS-compliant green packaging - critical for battery-powered sensor nodes and precision measurement systems.

Technical Context

The BAV116W-7-G is a planar epitaxial silicon PN junction diode optimized for low reverse leakage and stable forward conduction across wide temperature ranges. Its structure delivers consistent V(BR)R ≥130 V with minimal drift (±0% min/max spec) and maintains IR ≤80 nA even at TJ = 125°C under 75 V bias.

Designed for high-impedance signal path integrity, it features low CT (2.4–5 pF at 0 V, 1 MHz) and fast recovery (trr = 3.0 µs with IF = IR = 10 mA, RL = 100 Ω), enabling use in sample-and-hold circuits and RF detector stages where charge injection and capacitive loading must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM130 V - Withstands repetitive reverse transients up to this voltage without breakdown in clamp or snubber roles
IF(AV)215 mA - Continuous forward current handling capacity under standard PCB thermal conditions
IR @ 75 V, 25°C5 nA - Enables microampere-level bias stability in high-Z op-amp input protection networks
trr3.0 µs - Supports switching frequencies up to ~100 kHz in moderate-speed rectification or demodulation
VF @ 10 mA1.0 V - Low forward drop preserves signal headroom in low-voltage analog signal routing
RθJA500 °C/W - Thermal resistance defines derating to 150 mW at +80°C ambient on FR-4 board
TJ Range−65 to +150 °C - Qualified for extended industrial and automotive under-hood environments

Pinout & Package

SOD-123 surface-mount plastic package with cathode band marking; 2-terminal configuration; 0.01 g mass; UL 94V-0 flammability rating; matte tin-plated alloy 42 leadframe.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential node in clamping or polarity-protection configurations
CathodeForward current exit / reverse-biased terminalMarked by band; ties to reference rail or signal return to enable reverse-blocking function

Key Features

FeatureDesign Value
Ultra-low leakage currentIR ≤ 5 nA @ 75 V, 25°C - preserves bias accuracy in high-gain amplifier feedback paths
Fast reverse recoverytrr = 3.0 µs - minimizes switching distortion in 10–100 kHz signal conditioning stages
High-temperature operationRated to +150°C junction - supports placement near power components without derating penalty
Green, halogen-free constructionBr/Cl <900 ppm, Sb <1000 ppm - meets IPC-1752A Class 1 material declaration requirements
Automated assembly compatibilitySOD-123 footprint with J-STD-020 Level 1 moisture sensitivity - zero bake requirement pre-reflow

Applications

Instrumentation Signal ClampingLow-Power Sensor Biasing

Use Scenario: Protecting ADC input pins from ESD-induced overvoltage during field deployment of portable multimeters.

IC Role / Device Role: Low-leakage clamping diode limiting input swing to ±0.7 V beyond supply rails.

Use Value: 5 nA IR prevents DC offset drift in 10-MΩ input impedance paths, maintaining 16-bit measurement linearity.

Use Scenario: Providing stable bias current to photodiode anodes in battery-operated gas sensors.

IC Role / Device Role: Reverse-biased leakage reference element establishing fixed photocurrent sink point.

Use Value: IR variation <±10% from −40°C to +85°C ensures consistent dark-current compensation across operating range.

RF Detector DemodulationTiming Circuit Protection

Use Scenario: Envelope detection in 2.4 GHz ISM-band receiver front-ends using passive diode detectors.

IC Role / Device Role: Low-capacitance (2.4 pF) switching diode rectifying RF carrier while minimizing harmonic loading.

Use Value: CT <5 pF and trr = 3.0 µs enable clean demodulation up to 100 MHz without phase distortion.

Use Scenario: Guarding crystal oscillator inputs against transient coupling in GPS timing modules.

IC Role / Device Role: High-VRRM (130 V) clamp limiting EFT-induced spikes before oscillator buffer ICs.

Use Value: 130 V standoff withstands IEC 61000-4-4 level 4 (4 kV) bursts without degradation or latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAV103W-7-FVRRM = 100 V; IR = 10 nA @ 75 V, 25°C; trr = 4.0 µsLower voltage rating limits use in 12 V+ rail clamping; higher leakage reduces precision in µA-bias networksSelect when cost sensitivity outweighs leakage or voltage margin requirements
1N4148W-7-FVRRM = 100 V; IR = 25 nA @ 20 V, 25°C; trr = 4.0 µs; VF = 1.25 V @ 10 mAHigher leakage and VF degrade dynamic range in low-voltage sensor interfaces; not rated for >125°C operationAcceptable for general-purpose logic-level clamping where thermal or leakage specs are non-critical

Compared with BAV103W-7-F and 1N4148W-7-F, the BAV116W-7-G provides superior voltage margin (130 V vs. 100 V), lowest leakage (5 nA vs. ≥10 nA), and extended temperature capability (+150°C), making it the preferred choice for precision analog protection in harsh-environment instrumentation.

Availability

BAV116W-7-G is available at Aetrix Electronics and suitable for instrumentation signal clamping, low-power sensor biasing, RF detector demodulation, and timing circuit protection requiring stable component supply across long-lifecycle industrial programs.

Supply support for BAV116W-7-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, application-optimized components for industrial, computing, and consumer markets.

The BAV116W belongs to Diodes' precision switching diode product line, engineered specifically for low-leakage, high-voltage signal path protection in measurement and sensing systems demanding long-term bias stability.

FAQ

What is the maximum reverse voltage the BAV116W-7-G can block continuously?

The BAV116W-7-G has a peak repetitive reverse voltage (VRRM) rating of 130 V, verified per JEDEC test conditions with IR = 100 µA. This rating applies at TA = +25°C and derates linearly above +25°C ambient per the published power derating curve, maintaining full 130 V capability up to +80°C with appropriate PCB copper area.

Does the BAV116W-7-G meet RoHS and halogen-free requirements?

Yes - the BAV116W-7-G is fully RoHS 2 compliant (2011/65/EU) with no intentionally added lead, and certified "Green" per Diodes Incorporated's definition: Br <900 ppm, Cl <900 ppm (total Br+Cl <1500 ppm), and Sb <1000 ppm. The SOD-123 molding compound is UL 94V-0 rated and halogen/antimony free.

How does the leakage current change at elevated temperature?

At VR = 75 V, IR increases from 5 nA at +25°C to 80 nA at +125°C, as specified in the Electrical Characteristics table. This 16× increase remains within design margins for most high-impedance bias networks, and Figure 3 in DS30291 confirms monotonic, predictable behavior without thermal runaway.

Is the SOD-123 package compatible with standard reflow profiles?

Yes - the BAV116W-7-G has Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and requires no baking prior to soldering. Its matte tin finish is compatible with SnPb and Pb-free reflow profiles, including IPC/JEDEC J-STD-020D peak temperatures up to 260°C for ≤60 seconds.

BAV116W-7-G Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOD-123
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
130 V
Current - Average Rectified (Io):
215mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Capacitance @ Vr, F:
2.4pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123
Operating Temperature - Junction:
-65°C ~ 150°C

BAV116W-7-G FAQ

1.How can I place an order for BAV116W-7-G through Aetrix?

Please submit a Request for Quotation (RFQ) for BAV116W-7-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAV116W-7-G reliable?

The price and inventory of BAV116W-7-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV116W-7-G is usually 5 days.

3.What payment methods are accepted for BAV116W-7-G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV116W-7-G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAV116W-7-G?

BAV116W-7-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAV116W-7-G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAV116W-7-G?

For technical support, including BAV116W-7-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV116W-7-G requirements.

6.How does Aetrix verify that BAV116W-7-G is sourced from the original manufacturer or authorized distributors?

All BAV116W-7-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV116W-7-G meets industry standards.

7.What is the process for return or replacement of BAV116W-7-G?

All BAV116W-7-G units undergo pre-shipment inspection (PSI). If there is an issue with BAV116W-7-G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAV116W-7-G part is unused and in its original packaging.

Return procedure for BAV116W-7-G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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