Diodes Incorporated BAV116WS-7

Overview

BAV116WS-7 from Diodes Incorporated is a surface-mount ultra-low-leakage switching diode in SOD323 package, rated for 85 V peak repetitive reverse voltage, 215 mA forward current, and exhibiting only 5 nA leakage at 75 V reverse bias - ideal for precision signal clamping and high-impedance sample-and-hold circuits in instrumentation front-ends.

For engineers reviewing the BAV116WS-7 datasheet, BAV116WS-7 pinout, BAV116WS-7 application, or BAV116WS-7 equivalent, key selection criteria include verified low leakage (≤5 nA @ VR = 75 V), fast recovery time (≤3.0 µs), low junction capacitance (1.5 pF @ 0 V), thermal resistance (625 °C/W), and SOD323 footprint compatibility with space-constrained PCB layouts.

Technical Context

This diode employs a planar epitaxial silicon structure optimized for minimal reverse leakage and rapid carrier recombination. Its 3.0 µs reverse recovery time and 1.5 pF junction capacitance support high-frequency signal routing up to ~100 MHz in RF detector and fast-switching logic interface applications.

The device operates across –55 °C to +150 °C and maintains leakage below 80 nA even at 150 °C and 75 V reverse bias, enabling reliable performance in automotive under-hood sensor conditioning and industrial PLC input isolation stages.

Key Specifications

Pinout & Package

Package: SOD323 - 1.30 mm × 1.70 mm × 0.95 mm surface-mount plastic case with matte tin-plated alloy 42 leadframe; cathode identified by bar marking on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-leakage switching diode applications.

Compared with BAV199LT1G and 1N4148WS, the BAV116WS-7 delivers the lowest verified leakage (5 nA) and fastest recovery (3.0 µs) in SOD323, making it uniquely suited for high-precision, high-frequency analog signal paths where both leakage-induced offset and recovery-induced distortion must be minimized.

Availability

BAV116WS-7 is available at Aetrix Electronics and suitable for high-voltage clamping, RF detection, precision sample-and-hold, and industrial sensor conditioning requiring stable component supply and guaranteed green compliance.

Supply support for BAV116WS-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The BAV116WS belongs to Diodes' precision switching diode product line, engineered specifically for applications demanding ultra-low leakage, fast recovery, and consistent parametric stability across temperature and voltage stress.

FAQ

What is the maximum reverse voltage rating for BAV116WS-7?

The BAV116WS-7 has a peak repetitive reverse voltage (VRRM) rating of 85 V, verified per DS35981 Rev. 3–2. This rating applies under standard test conditions (TA = +25°C, pulse testing), and derates linearly above 25°C ambient per the published power derating curve - e.g., usable up to ~60 V at +100°C ambient with proper PCB thermal design.

Does BAV116WS-7 meet RoHS and halogen-free requirements?

Yes. The BAV116WS-7 is fully RoHS 2 compliant (2011/65/EU), lead-free, and classified as "Green" per Diodes Incorporated's specification: total bromine + chlorine <1500 ppm, bromine <900 ppm, chlorine <900 ppm, and antimony <1000 ppm. This is confirmed in Notes 1–3 of the official datasheet DS35981.

How does the 3.0 µs reverse recovery time impact circuit performance?

A 3.0 µs trr enables clean switching in signal paths up to ~300 kHz without significant recovery tail distortion. In sample-and-hold or demodulator designs, this ensures hold capacitor charging completes before next cycle, avoiding droop-induced gain error. It also reduces EMI generation compared to diodes with >5 µs trr in high-dV/dt environments.

Can BAV116WS-7 replace 1N4148 in SOD323 footprint designs?

Yes - the BAV116WS-7 shares the SOD323 package and pinout (anode/cathode orientation) with 1N4148WS, but offers superior leakage (5 nA vs. 25 nA typical) and faster recovery (3.0 µs vs. 4.0 µs). No layout change is needed; however, verify that the lower VF (0.89 V @ 10 mA) does not affect bias point stability in existing circuits.