Diodes Incorporated BAV116WSQ-7
- Part No.:
- BAV116WSQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
BAV116WSQ-7.pdf
- Description:
- DIODE GEN PURP 85V 215MA SOD323
- Quantity:
- Payment:

- Shipping:

Inventory:446,464
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Product details
Overview
BAV116WSQ-7 from Diodes Incorporated is a surface-mount ultra-low-leakage silicon switching diode in SOD323 package, rated for 85 V peak reverse voltage, 215 mA forward current, and exhibiting only 5 nA leakage at 75 V reverse bias-ideal for precision signal clamping and high-impedance sample-and-hold circuits in automotive sensor interfaces.
For engineers reviewing the BAV116WSQ-7 datasheet, BAV116WSQ-7 pinout, BAV116WSQ-7 application, or BAV116WSQ-7 equivalent, key selection criteria include verified 5 nA leakage at 75 V, 1.5 pF capacitance at 0 V, AEC-Q101 qualification, SOD323 mechanical compatibility, and thermal resistance of 625 °C/W on FR-4 board.
Technical Context
This diode operates as a unidirectional voltage-controlled switch with fast 3.0 µs reverse recovery time and low forward voltage drop (1.25 V max at 150 mA), enabling efficient signal routing in low-power analog front-ends. Its 1.5 pF junction capacitance and ultra-low leakage support high-frequency AC coupling and precision DC blocking without signal distortion.
The device is constructed using planar epitaxial silicon technology with matte tin-plated alloy 42 leads, qualified to AEC-Q101 for automotive underhood applications, and rated for continuous operation from –55 °C to +150 °C with moisture sensitivity level 1 per J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 85 V - Maximum working reverse voltage before breakdown; ensures reliable blocking in 24 V automotive supply monitoring |
| IF | 215 mA - Continuous forward current rating; supports sustained signal-level rectification in sensor bias networks |
| IR @ 75 V | 5 nA - Ultra-low leakage enables >100 MΩ effective shunt impedance in high-gain amplifier feedback paths |
| CT @ 0 V | 1.5 pF - Low junction capacitance preserves bandwidth in RF detector and EMI filter applications up to 500 MHz |
| trr | 3.0 µs - Fast recovery supports pulse-width modulation signal conditioning without tail current artifacts |
| RθJA | 625 °C/W - Thermal resistance defines power derating slope: full 200 mW dissipation only at TA ≤ 75 °C on standard FR-4 layout |
| TJ Range | –55 to +150 °C - Extended temperature capability allows placement near engine control unit (ECU) power stages |
Pinout & Package
Package: SOD323 - ultra-compact surface-mount plastic case (1.30 × 1.70 × 0.95 mm), moisture sensitivity level 1, UL 94V-0 rated, cathode identified by bar marking on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in clamping or protection configuration; requires PCB pad per AP02001 layout |
| Cathode (bar-marked) | Forward current exit / reverse blocking terminal | Internally tied to substrate; must be routed to higher-potential rail or reference in reverse-biased applications |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low IR @ VR = 75 V | 5 nA - Enables stable DC bias in photodiode transimpedance amplifiers without offset drift |
| AEC-Q101 qualification | Validated for automotive grade-1 (–40 to +125 °C ambient) and grade-0 (–40 to +150 °C junction) operation |
| SOD323 footprint | 0.004 g mass and 1.30 × 1.70 mm outline - compatible with high-density PCB layouts and automated optical inspection (AOI) |
| Green construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU RoHS 2011/65/EU and JIG-101 |
Applications
| Automotive Cabin Temperature Sensor Interface | Industrial Current Loop Receiver |
|---|---|
Use Scenario: Signal conditioning for NTC thermistor bridges in HVAC control modules exposed to under-dash temperature swings. IC Role / Device Role / Timing Role: Precision DC blocking diode in bridge excitation path to prevent leakage-induced offset error at cold start (–40 °C). Use Value: 5 nA leakage ensures <0.5 µV error contribution across 100 kΩ bridge arms-meeting ASAM MCD-2 MC calibration tolerance. | Use Scenario: Input stage protection for 4–20 mA loop receivers in programmable logic controller (PLC) analog input cards. IC Role / Device Role / Timing Role: Reverse-polarity clamp preventing damage during field wiring reversal; placed before op-amp input stage. Use Value: 85 V VRWM withstands induced transients per IEC 61000-4-4 (4 kV EFT), while 1.5 pF avoids loading 10 kHz loop bandwidth. |
| Medical Pulse Oximeter Front-End | Test Equipment Signal Path Switching |
Use Scenario: Isolation of red/IR LED drive signals from photodiode transimpedance amplifier in portable oximeters. IC Role / Device Role / Timing Role: High-isolation switch enabling time-division multiplexing between dual-wavelength LED drivers. Use Value: 3.0 µs trr and sub-pF capacitance ensure minimal crosstalk (<–60 dB) between 100 Hz LED pulses and µA-level photodiode currents. | Use Scenario: Channel selection diode in automated test equipment (ATE) multiplexer matrices handling 1–10 MHz sine wave stimuli. IC Role / Device Role / Timing Role: Low-capacitance series switch controlling signal path integrity in 50 Ω RF measurement paths. Use Value: 1.5 pF CT limits insertion loss to <0.2 dB at 10 MHz, preserving calibrated amplitude accuracy across 100-channel scan sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-low-leakage diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV199LT1G | Higher leakage (100 nA @ 75 V), same SOT-23-3 package but dual configuration | Not suitable for single-diode precision biasing; requires redesign for dual-channel use | Select only when dual-diode topology and relaxed leakage specs are acceptable |
| 1N4148WS | Lower VRWM (100 V), higher leakage (25 nA @ 75 V), identical SOD323 footprint | Acceptable for general-purpose clamping but fails automotive-grade leakage requirements | Use only in non-automotive industrial designs where 5 nA is not mandated |
Compared with BAV199LT1G and 1N4148WS, the BAV116WSQ-7 uniquely delivers AEC-Q101 qualification plus 5 nA leakage in SOD323-making it the sole choice for space-constrained, high-reliability automotive sensor signal chains requiring sub-10 nA leakage stability over temperature.
Availability
BAV116WSQ-7 is available at Aetrix Electronics and suitable for automotive sensor interface design, industrial 4–20 mA loop protection, medical pulse oximetry front-ends, and ATE signal path switching requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAV116WSQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and consumer markets with high-reliability components.
The BAV116WSQ-7 belongs to Diodes' AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision analog signal integrity in harsh-environment automotive and medical sensing applications.
FAQ
What is the maximum reverse voltage rating for BAV116WSQ-7?
The BAV116WSQ-7 has a peak repetitive reverse voltage (VRRM) of 85 V and a working peak reverse voltage (VRWM) of 85 V. This rating is validated per the DS38488 datasheet under standard test conditions and applies across its full operating temperature range of –55 °C to +150 °C.
Is BAV116WSQ-7 suitable for high-frequency signal routing?
Yes-the device exhibits 1.5 pF total capacitance at 0 V reverse bias and 3.0 µs reverse recovery time, making it appropriate for signal routing up to 500 MHz in low-power RF detector and EMI filter applications, provided layout minimizes parasitic inductance.
Does BAV116WSQ-7 require special PCB layout considerations?
Yes-Diodes Incorporated specifies a recommended pad layout in application note AP02001. Use the defined SOD323 footprint (1.30 × 1.70 mm), maintain 0.2 mm solder mask dams, and avoid thermal relief on cathode/anode pads to ensure consistent reflow and minimize tombstoning risk.
How does the 5 nA leakage specification impact circuit performance?
At 75 V reverse bias, 5 nA leakage translates to an effective parallel resistance >15 GΩ, which prevents measurable error in high-impedance nodes-such as photodiode bias paths or precision voltage references-where even 100 nA would cause >1 mV offset in 100 kΩ networks.
BAV116WSQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 85 V
- Current - Average Rectified (Io):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 1.5pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
- Operating Temperature - Junction:
- -55°C ~ 150°C
BAV116WSQ-7 FAQ
1.How can I place an order for BAV116WSQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV116WSQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV116WSQ-7 reliable?
The price and inventory of BAV116WSQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV116WSQ-7 is usually 5 days.
3.What payment methods are accepted for BAV116WSQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV116WSQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV116WSQ-7?
BAV116WSQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV116WSQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV116WSQ-7?
For technical support, including BAV116WSQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV116WSQ-7 requirements.
6.How does Aetrix verify that BAV116WSQ-7 is sourced from the original manufacturer or authorized distributors?
All BAV116WSQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV116WSQ-7 meets industry standards.
7.What is the process for return or replacement of BAV116WSQ-7?
All BAV116WSQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAV116WSQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV116WSQ-7 part is unused and in its original packaging.
Return procedure for BAV116WSQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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