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Diodes Incorporated BAV116WSQ-7

Part No.:
BAV116WSQ-7
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
SC-76, SOD-323
Datasheet:
AetrixBAV116WSQ-7.pdf
Description:
DIODE GEN PURP 85V 215MA SOD323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:446,464

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Product details

Overview

BAV116WSQ-7 from Diodes Incorporated is a surface-mount ultra-low-leakage silicon switching diode in SOD323 package, rated for 85 V peak reverse voltage, 215 mA forward current, and exhibiting only 5 nA leakage at 75 V reverse bias-ideal for precision signal clamping and high-impedance sample-and-hold circuits in automotive sensor interfaces.

For engineers reviewing the BAV116WSQ-7 datasheet, BAV116WSQ-7 pinout, BAV116WSQ-7 application, or BAV116WSQ-7 equivalent, key selection criteria include verified 5 nA leakage at 75 V, 1.5 pF capacitance at 0 V, AEC-Q101 qualification, SOD323 mechanical compatibility, and thermal resistance of 625 °C/W on FR-4 board.

Technical Context

This diode operates as a unidirectional voltage-controlled switch with fast 3.0 µs reverse recovery time and low forward voltage drop (1.25 V max at 150 mA), enabling efficient signal routing in low-power analog front-ends. Its 1.5 pF junction capacitance and ultra-low leakage support high-frequency AC coupling and precision DC blocking without signal distortion.

The device is constructed using planar epitaxial silicon technology with matte tin-plated alloy 42 leads, qualified to AEC-Q101 for automotive underhood applications, and rated for continuous operation from –55 °C to +150 °C with moisture sensitivity level 1 per J-STD-020.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM85 V - Maximum working reverse voltage before breakdown; ensures reliable blocking in 24 V automotive supply monitoring
IF215 mA - Continuous forward current rating; supports sustained signal-level rectification in sensor bias networks
IR @ 75 V5 nA - Ultra-low leakage enables >100 MΩ effective shunt impedance in high-gain amplifier feedback paths
CT @ 0 V1.5 pF - Low junction capacitance preserves bandwidth in RF detector and EMI filter applications up to 500 MHz
trr3.0 µs - Fast recovery supports pulse-width modulation signal conditioning without tail current artifacts
RθJA625 °C/W - Thermal resistance defines power derating slope: full 200 mW dissipation only at TA ≤ 75 °C on standard FR-4 layout
TJ Range–55 to +150 °C - Extended temperature capability allows placement near engine control unit (ECU) power stages

Pinout & Package

Package: SOD323 - ultra-compact surface-mount plastic case (1.30 × 1.70 × 0.95 mm), moisture sensitivity level 1, UL 94V-0 rated, cathode identified by bar marking on top surface.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential node in clamping or protection configuration; requires PCB pad per AP02001 layout
Cathode (bar-marked)Forward current exit / reverse blocking terminalInternally tied to substrate; must be routed to higher-potential rail or reference in reverse-biased applications

Key Features

FeatureDesign Value
Ultra-low IR @ VR = 75 V5 nA - Enables stable DC bias in photodiode transimpedance amplifiers without offset drift
AEC-Q101 qualificationValidated for automotive grade-1 (–40 to +125 °C ambient) and grade-0 (–40 to +150 °C junction) operation
SOD323 footprint0.004 g mass and 1.30 × 1.70 mm outline - compatible with high-density PCB layouts and automated optical inspection (AOI)
Green constructionHalogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU RoHS 2011/65/EU and JIG-101

Applications

Automotive Cabin Temperature Sensor InterfaceIndustrial Current Loop Receiver

Use Scenario: Signal conditioning for NTC thermistor bridges in HVAC control modules exposed to under-dash temperature swings.

IC Role / Device Role / Timing Role: Precision DC blocking diode in bridge excitation path to prevent leakage-induced offset error at cold start (–40 °C).

Use Value: 5 nA leakage ensures <0.5 µV error contribution across 100 kΩ bridge arms-meeting ASAM MCD-2 MC calibration tolerance.

Use Scenario: Input stage protection for 4–20 mA loop receivers in programmable logic controller (PLC) analog input cards.

IC Role / Device Role / Timing Role: Reverse-polarity clamp preventing damage during field wiring reversal; placed before op-amp input stage.

Use Value: 85 V VRWM withstands induced transients per IEC 61000-4-4 (4 kV EFT), while 1.5 pF avoids loading 10 kHz loop bandwidth.

Medical Pulse Oximeter Front-EndTest Equipment Signal Path Switching

Use Scenario: Isolation of red/IR LED drive signals from photodiode transimpedance amplifier in portable oximeters.

IC Role / Device Role / Timing Role: High-isolation switch enabling time-division multiplexing between dual-wavelength LED drivers.

Use Value: 3.0 µs trr and sub-pF capacitance ensure minimal crosstalk (<–60 dB) between 100 Hz LED pulses and µA-level photodiode currents.

Use Scenario: Channel selection diode in automated test equipment (ATE) multiplexer matrices handling 1–10 MHz sine wave stimuli.

IC Role / Device Role / Timing Role: Low-capacitance series switch controlling signal path integrity in 50 Ω RF measurement paths.

Use Value: 1.5 pF CT limits insertion loss to <0.2 dB at 10 MHz, preserving calibrated amplitude accuracy across 100-channel scan sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-leakage diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAV199LT1GHigher leakage (100 nA @ 75 V), same SOT-23-3 package but dual configurationNot suitable for single-diode precision biasing; requires redesign for dual-channel useSelect only when dual-diode topology and relaxed leakage specs are acceptable
1N4148WSLower VRWM (100 V), higher leakage (25 nA @ 75 V), identical SOD323 footprintAcceptable for general-purpose clamping but fails automotive-grade leakage requirementsUse only in non-automotive industrial designs where 5 nA is not mandated

Compared with BAV199LT1G and 1N4148WS, the BAV116WSQ-7 uniquely delivers AEC-Q101 qualification plus 5 nA leakage in SOD323-making it the sole choice for space-constrained, high-reliability automotive sensor signal chains requiring sub-10 nA leakage stability over temperature.

Availability

BAV116WSQ-7 is available at Aetrix Electronics and suitable for automotive sensor interface design, industrial 4–20 mA loop protection, medical pulse oximetry front-ends, and ATE signal path switching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAV116WSQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and consumer markets with high-reliability components.

The BAV116WSQ-7 belongs to Diodes' AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision analog signal integrity in harsh-environment automotive and medical sensing applications.

FAQ

What is the maximum reverse voltage rating for BAV116WSQ-7?

The BAV116WSQ-7 has a peak repetitive reverse voltage (VRRM) of 85 V and a working peak reverse voltage (VRWM) of 85 V. This rating is validated per the DS38488 datasheet under standard test conditions and applies across its full operating temperature range of –55 °C to +150 °C.

Is BAV116WSQ-7 suitable for high-frequency signal routing?

Yes-the device exhibits 1.5 pF total capacitance at 0 V reverse bias and 3.0 µs reverse recovery time, making it appropriate for signal routing up to 500 MHz in low-power RF detector and EMI filter applications, provided layout minimizes parasitic inductance.

Does BAV116WSQ-7 require special PCB layout considerations?

Yes-Diodes Incorporated specifies a recommended pad layout in application note AP02001. Use the defined SOD323 footprint (1.30 × 1.70 mm), maintain 0.2 mm solder mask dams, and avoid thermal relief on cathode/anode pads to ensure consistent reflow and minimize tombstoning risk.

How does the 5 nA leakage specification impact circuit performance?

At 75 V reverse bias, 5 nA leakage translates to an effective parallel resistance >15 GΩ, which prevents measurable error in high-impedance nodes-such as photodiode bias paths or precision voltage references-where even 100 nA would cause >1 mV offset in 100 kΩ networks.

BAV116WSQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SC-76, SOD-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
85 V
Current - Average Rectified (Io):
215mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Capacitance @ Vr, F:
1.5pF @ 0V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-323
Operating Temperature - Junction:
-55°C ~ 150°C

BAV116WSQ-7 FAQ

1.How can I place an order for BAV116WSQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAV116WSQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAV116WSQ-7 reliable?

The price and inventory of BAV116WSQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV116WSQ-7 is usually 5 days.

3.What payment methods are accepted for BAV116WSQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV116WSQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAV116WSQ-7?

BAV116WSQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAV116WSQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAV116WSQ-7?

For technical support, including BAV116WSQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV116WSQ-7 requirements.

6.How does Aetrix verify that BAV116WSQ-7 is sourced from the original manufacturer or authorized distributors?

All BAV116WSQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV116WSQ-7 meets industry standards.

7.What is the process for return or replacement of BAV116WSQ-7?

All BAV116WSQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAV116WSQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAV116WSQ-7 part is unused and in its original packaging.

Return procedure for BAV116WSQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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