Nexperia USA Inc. BAV170,215

Overview

BAV170,215 from Nexperia is a low-leakage, medium-speed switching double diode in common cathode configuration housed in an SOT23 surface-mount package. It delivers typ. 3 pA reverse current at 75 V, 0.8 µs reverse recovery time, and supports up to 500 mA repetitive peak forward current per diode - ideal for precision biasing and signal clamping in space-constrained analog front-ends.

For engineers reviewing the BAV170,215 datasheet, BAV170,215 pinout, BAV170,215 application, or BAV170,215 equivalent, key selection criteria include ultra-low leakage at elevated temperature, dual-diode integration in a 3-pin footprint, thermal resistance (R_th(j-sp) = 360 K/W), and compatibility with reflow/wave soldering per IPC-7095 standards.

Technical Context

The BAV170,215 integrates two epitaxial silicon switching diodes sharing a single cathode terminal, enabling compact dual-path clamping or level-shifting without discrete pairing. Its low junction capacitance (2 pF at 0 V) and fast trr (0.8 µs typ.) support operation up to ~1 MHz in sample-and-hold or RF detector circuits.

Designed for ambient temperatures from –55 °C to 150 °C, it maintains stable IR ≤ 5 nA at 75 V and 25 °C, rising to 80 nA at 150 °C - critical for high-impedance sensor interfaces where leakage-induced offset must be minimized across temperature.

Key Specifications

Pinout & Package

SOT23 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm pin pitch); thermally optimized for FR4 PCB with single-sided copper and standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage dual-diode applications.

Compared with BAV99,215 and MMBD1204, the BAV170,215 uniquely balances ultra-low leakage (3 pA) with 75 V blocking and 0.8 µs switching - making it the only option among the three viable for high-impedance, wide-temperature-range analog front-ends requiring both precision and robustness.

Availability

BAV170,215 is available at Aetrix Electronics and suitable for instrumentation signal conditioning, low-power sensor biasing, RF detector peak hold, and level-shifting interface applications requiring stable component supply and full traceability.

Supply support for BAV170,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BAV170,215 belongs to Nexperia's low-leakage switching diode product line, engineered specifically for precision analog signal integrity in test equipment, medical sensors, and portable instrumentation where nanoscale leakage currents directly impact measurement validity.

FAQ

What is the maximum continuous forward current per diode at 70 °C ambient?

At Tamb = 70 °C on FR4 PCB (single-sided copper), the maximum continuous forward current is 125 mA when both diodes are loaded, as defined in Table 5. This derating reflects thermal limits imposed by R_th(j-a) = 500 K/W and P_tot = 250 mW. Operation above this requires active cooling or reduced duty cycle.

Is BAV170,215 qualified for automotive applications?

No. Per Nexperia's revision history (Table 8), BAV170 v.4 explicitly states the device was changed to non-automotive qualification in April 2023. Automotive alternatives - such as the BAV170-Q - are separately qualified to AEC-Q101 and listed on nexperia.com; BAV170,215 must not be used in safety-critical or automotive environments.

How does the common cathode configuration affect PCB layout versus two discrete diodes?

The common cathode eliminates one dedicated cathode trace and reduces pad count from six to three, cutting layout area by ~35% and minimizing parasitic inductance between cathodes. It also enforces matched thermal coupling between diodes, improving tracking in temperature-sensitive bias networks - unlike discrete placement where thermal gradients may cause leakage mismatch.

Can BAV170,215 be used in reverse-biased photodiode circuits operating at –50 V?

No. Its maximum continuous reverse voltage is 75 V, but photodiode biasing at –50 V requires guaranteed stability at that stress level across temperature and lifetime. The datasheet specifies IR = 5 nA max at VR = 75 V (pulsed), not DC - and leakage rises exponentially with voltage. For –50 V DC photodiode bias, a diode rated for ≥100 V DC with specified DC IR (e.g., BAS16HV) is required.