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Nexperia USA Inc. BAV170MYL

Part No.:
BAV170MYL
Manufacturer:
Nexperia USA Inc.
Category:
Diode Arrays
Package:
SC-101, SOT-883
Datasheet:
AetrixBAV170MYL.pdf
Description:
DIODE ARRAY GP 75V 320MA SOT-883
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,516

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Product details

Overview

BAV170M from Nexperia is a dual common cathode low-leakage switching diode in a DFN1006-3 (SOT883) package, designed for precision signal routing and leakage-sensitive bias networks. It delivers 0.8 µs reverse recovery time, 3 pA typical reverse current at 75 V and 25 °C, 2 pF junction capacitance, and AEC-Q101 qualification for automotive use - deployed in ECU input protection and sensor front-end clamping circuits.

For engineers reviewing the BAV170M datasheet, BAV170M pinout, BAV170M application, or BAV170M equivalent, key selection criteria include ultra-low IR for standby power integrity, trr < 1 µs for high-frequency sampling hold, Cd ≤ 2 pF for minimal signal distortion in RF-coupled paths, and thermal resistance Rth(j-sp) = 190 K/W for compact PCB layouts.

Technical Context

The BAV170M integrates two independent silicon PN junction diodes sharing a single cathode terminal, enabling compact dual-path clamping or steering without inter-diode coupling. Its construction uses epitaxial planar technology to achieve sub-nA leakage and controlled carrier lifetime for fast recovery.

Thermal performance is defined by two distinct paths: Rth(j-a) = 385 K/W (standard FR4 footprint) and Rth(j-sp) = 190 K/W (cathode pad enhanced), allowing designers to select layout strategy based on power dissipation and board space constraints.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse current (IR) 3 pA typ @ 75 V, 25 °C - enables nanoampere-level standby current budgets in battery-backed sensors
Reverse recovery time (trr) 0.8 µs typ - supports >1 MHz switching in sample-and-hold or peak-detect circuits
Junction capacitance (Cd) 2 pF @ 0 V, 1 MHz - minimizes loading on high-impedance analog nodes and RF signal paths
Repetitive peak reverse voltage (VRRM) 85 V - provides margin for transients in 24 V automotive supply rails and industrial I/O
Forward current (IF) 320 mA per diode - sufficient for LED biasing, logic-level translation, and discrete gate driving
Package DFN1006-3 (SOT883), 0.48 mm height - fits 0402-class footprints with 0.65 mm pitch for ultra-dense layouts

Pinout & Package

Encapsulated in a leadless ultra-small DFN1006-3 (SOT883) plastic package with 0.48 mm profile, 0.62 mm × 0.55 mm body, and three solderable terminals on 0.65 mm pitch.

Pin/Terminal Circuit Role Design Meaning
1 Anode of Diode 1 Input path for first signal channel; connects to source or driver output in dual-rail clamping
2 Anode of Diode 2 Independent input path for second channel; allows separate signal conditioning without shared anode impedance
3 Common Cathode Single low-inductance return node for both diodes; simplifies grounding and reduces loop area in EMI-critical designs

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive underhood environments up to 150 °C junction temperature and mechanical shock/vibration profiles
Ultra-low leakage 3 pA typical IR ensures <10 nW power loss per diode at 75 V - critical for energy harvesting and IoT sleep modes
High-speed recovery 0.8 µs trr enables clean edge transitions in 1–2 MHz clock distribution and ADC front-end protection
Low-profile SMD 0.48 mm max height permits placement under connectors or beneath shields in space-constrained modules
Thermally optimized cathode pad Rth(j-sp) = 190 K/W enables 660 mW total power dissipation with minimal thermal derating on standard FR4

Applications

Automotive Sensor Interface Portable Medical Instrumentation

Use Scenario: Protecting analog front-end inputs of pressure/temperature sensors in engine control units against load dump and ESD events.

IC Role / Device Role / Timing Role: Dual-path clamping diode providing bidirectional overvoltage suppression while maintaining sub-picoampere leakage into precision op-amp inputs.

Use Value: Prevents sensor offset drift caused by leakage-induced bias current errors, preserving ±0.1% measurement accuracy over temperature.

Use Scenario: Isolating electrode inputs in portable ECG monitors during lead-off detection and defibrillation pulse rejection.

IC Role / Device Role / Timing Role: Low-capacitance steering diode routing biopotential signals to differential amplifiers while blocking high-voltage transients.

Use Value: 2 pF Cd avoids phase shift in 0.05–150 Hz bandwidth; 3 pA IR prevents DC baseline wander during multi-hour battery-operated sessions.

Industrial PLC Analog Input Modules RF Signal Path Protection

Use Scenario: Front-end protection for 4–20 mA current loop receivers exposed to field wiring surges and ground potential differences.

IC Role / Device Role / Timing Role: Dual common-cathode configuration enables symmetrical clamping of both loop terminals to a stable reference rail.

Use Value: Shared cathode reduces component count vs. discrete diodes; 85 V VRRM withstands 48 V system transients with 2× safety margin.

Use Scenario: DC blocking and transient suppression in 2.4 GHz Wi-Fi antenna switch control lines and LNA bias feeds.

IC Role / Device Role / Timing Role: Low-Cd, low-IR diode placed in series with RF control paths to block DC while passing RF with minimal insertion loss.

Use Value: 2 pF capacitance yields <0.1 dB insertion loss at 2.4 GHz; 0.8 µs trr avoids harmonic generation during fast GPIO toggling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-leakage diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
BAV199W Higher IR (5 nA typ), slower trr (4 µs), same DFN1006-3 package Acceptable for general-purpose switching but unsuitable for nanoampere-biased sensor nodes Select when cost sensitivity outweighs leakage or speed requirements
NSR0230P2T5G Lower VRRM (30 V), higher IF (400 mA), different SOD-523 package Limited to 12 V systems; incompatible with 24/48 V automotive or industrial rails Choose only for low-voltage consumer electronics where board space allows larger footprint

Compared with BAV199W and NSR0230P2T5G, the BAV170M uniquely balances sub-picoampere leakage, sub-microsecond recovery, and 85 V standoff in a 0.48 mm profile - making it the sole option for AEC-Q101-compliant, high-precision dual-clamp functions in constrained automotive and medical layouts.

Availability

BAV170M is available at Aetrix Electronics and suitable for automotive ECU design, portable medical instrumentation, industrial analog input modules, and RF front-end protection requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAV170M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade components and advanced packaging technologies.

The BAV170M belongs to Nexperia's AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision analog signal integrity and robust transient protection in harsh automotive and industrial environments.

FAQ

What is the maximum continuous forward current per diode at 100 °C ambient?

At Tamb = 100 °C, the derated forward current per diode is approximately 180 mA, based on the FR4 PCB derating curve in Figure 1. This value assumes single-diode operation on a standard tin-plated copper footprint and accounts for thermal resistance and junction temperature limits up to 150 °C.

Can BAV170M be used in place of a single diode like BAV21?

No - BAV170M is a dual common-cathode device with fixed internal topology; it cannot substitute for a single-diode part without circuit redesign. Its anodes are isolated but share cathode, so using only one anode requires external cathode termination and leaves unused junction parasitics affecting layout and thermal behavior.

Is the 3 pA reverse current guaranteed over temperature?

No - 3 pA is the typical value at 25 °C and 75 V. At 150 °C and 75 V, IR rises to 3–80 nA per the Characteristics table. Designers must verify leakage impact at worst-case operating temperature using the exponential Tj dependence shown in Figure 5.

Does the DFN1006-3 package support automated optical inspection (AOI)?

Yes - the DFN1006-3 package has a transparent top view and clearly defined solder land geometry per Figure 10, enabling reliable AOI detection of solder joint quality, tombstoning, and lateral misalignment in high-volume SMT lines.

BAV170MYL Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-101, SOT-883
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
75 V
Current - Average Rectified (Io) (per Diode):
320mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Operating Temperature - Junction:
150°C (Max)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-883

BAV170MYL FAQ

1.How can I place an order for BAV170MYL through Aetrix?

Please submit a Request for Quotation (RFQ) for BAV170MYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAV170MYL reliable?

The price and inventory of BAV170MYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV170MYL is usually 5 days.

3.What payment methods are accepted for BAV170MYL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV170MYL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAV170MYL?

BAV170MYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAV170MYL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAV170MYL?

For technical support, including BAV170MYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV170MYL requirements.

6.How does Aetrix verify that BAV170MYL is sourced from the original manufacturer or authorized distributors?

All BAV170MYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV170MYL meets industry standards.

7.What is the process for return or replacement of BAV170MYL?

All BAV170MYL units undergo pre-shipment inspection (PSI). If there is an issue with BAV170MYL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAV170MYL part is unused and in its original packaging.

Return procedure for BAV170MYL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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