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Nexperia USA Inc. BAV170QA-QZ
- Part No.:
- BAV170QA-QZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
BAV170QA-QZ.pdf
- Description:
- DIODE ARR GP 75V 320MA DFN1010D3
- Quantity:
- Payment:
- Shipping:
Inventory:3,887
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Product details
Overview
BAV170QA-Q from Nexperia is a dual common cathode low-leakage switching diode in a DFN1010D-3 (SOT1215) package, rated for 75 V reverse voltage, 320 mA forward current per diode, and featuring 0.8 µs reverse recovery time and 3 pA typical reverse leakage at 75 V/25 °C - used in precision biasing and automotive sensor signal conditioning.
For engineers reviewing the BAV170QA-Q datasheet, BAV170QA-Q pinout, BAV170QA-Q application, or BAV170QA-Q equivalent, key selection criteria include ultra-low IR (≤5 nA max), ultra-small 1.1 mm × 1.0 mm footprint, AEC-Q101 qualification, side-wettable flanks for AOI, and dual-diode common-cathode topology for space-constrained rail clamping.
Technical Context
This dual diode integrates two independent anodes (A1, A2) sharing a single common cathode (CC), enabling independent signal path clamping or dual-rail protection without inter-diode coupling. Its 2 pF capacitance and 0.8 µs trr support high-frequency signal integrity in 10–100 MHz analog front-ends.
Thermally optimized for FR4 PCBs with Rth(j-sp) = 230 K/W and Rth(j-a) = 385 K/W, it sustains 325 mW power dissipation at Tamb ≤ 25 °C with cathode pad thermal enhancement - critical for automotive under-hood modules operating up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V repetitive peak reverse voltage - supports 24 V automotive supply rail transients with margin. |
| IR @ 75 V / 25 °C | 0.003 nA typical (3 pA) - enables nanoamp-level bias stability in photodiode amplifiers. |
| trr | 0.8 µs typical - ensures clean switching in 1–5 MHz clocked sample-and-hold circuits. |
| Cd @ 0 V / 1 MHz | 2 pF - minimizes capacitive loading on high-impedance sensor nodes. |
| IF max per diode | 320 mA - sufficient for LED indicator drive or logic-level clamping in microcontroller I/O protection. |
| Package | DFN1010D-3 (SOT1215), 1.1 mm × 1.0 mm × 0.37 mm - fits 0402-class board area with side-wettable flanks for automated optical inspection. |
Pinout & Package
DFN1010D-3 (SOT1215) is a leadless, ultra-thin surface-mount package with visible side-wettable flanks for solder-joint inspection. Dimensions: 1.1 mm × 1.0 mm × 0.37 mm body height; 0.75 mm pin pitch; thermal-enhanced cathode pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first independent clamping path; connects to protected signal line or supply rail. |
| 2 | Anode (Diode 2) | Input node for second independent clamping path; enables dual-rail or differential signal protection. |
| 3 & 4 | Common Cathode | Shared output node tied to reference (e.g., ground or regulated rail); thermally coupled to PCB copper for dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and ADAS sensor interfaces. |
| Side-wettable flanks | Enables 100% automated optical inspection (AOI) of solder joints without X-ray - reduces manufacturing defect escape. |
| Ultra-low IR | 3 pA typical reverse leakage preserves accuracy in high-impedance feedback networks and battery-monitoring dividers. |
| Low-profile package | 0.37 mm height allows stacking under connectors or beneath shields in compact telematics modules. |
| Thermal-enhanced cathode pad | Reduces Rth(j-sp) to 230 K/W - improves reliability in sustained 100+ °C ambient environments. |
Applications
| Automotive Sensor Signal Conditioning | High-Impedance Bias Networks |
|---|---|
Use Scenario: Clamping ECU analog inputs from wheel speed or pressure sensors exposed to load-dump transients. IC Role / Device Role / Timing Role: Dual-rail transient voltage suppressor with common cathode tied to 5 V reference rail. Use Value: 85 V VRRM and 0.8 µs trr prevent signal distortion during 10–100 ns spikes while maintaining <100 µV offset error. |
Use Scenario: Providing stable bias current to photodiode amplifiers in LiDAR receiver front-ends. IC Role / Device Role / Timing Role: Low-leakage DC path stabilizer with dual-anode flexibility for multi-channel bias distribution. Use Value: 3 pA IR ensures <0.1% gain drift over temperature in 1 GΩ feedback networks. |
| Microcontroller I/O Protection | Low-Power Battery Monitoring |
Use Scenario: Protecting 3.3 V GPIO pins against ESD and overvoltage in infotainment touch controllers. IC Role / Device Role / Timing Role: Fast-switching clamp diode pair shunting faults to VDD or GND rails. Use Value: 2 pF capacitance avoids signal rise-time degradation on 10 MHz SPI lines. |
Use Scenario: Dividing 12 V vehicle battery voltage for ADC input in telematics power management ICs. IC Role / Device Role / Timing Role: Precision resistor divider stabilization element minimizing leakage-induced measurement error. Use Value: Sub-5 nA IR limits voltage divider error to <0.02% at 25 °C, critical for ±10 mV SOC accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV199,115 | Higher IR (100 nA typ), larger SOT-323 package (2.1 mm × 1.25 mm), no AEC-Q101 qualification. | Acceptable for industrial non-automotive use; unsuitable for under-hood temperature or AOI requirements. | Select when cost is primary and automotive qualification or ultra-low leakage is not required. |
| NSR0230P2T5G | Single diode, 30 V VRRM, 0.35 µs trr, 1.5 pF Cd - smaller but lower voltage rating and no dual-anode topology. | Limited to single-rail clamping; cannot replace dual-path functionality without redesign. | Choose only if system operates below 30 V and requires faster switching than 0.8 µs. |
Compared with BAV199,115 and NSR0230P2T5G, the BAV170QA-Q uniquely combines AEC-Q101 compliance, dual-anode common-cathode topology, sub-5 nA leakage, and AOI-compatible packaging - making it the sole fit for space-constrained, high-reliability automotive signal conditioning where both voltage margin and leakage performance are simultaneously critical.
Availability
BAV170QA-Q is available at Aetrix Electronics and suitable for automotive sensor interfaces, high-impedance analog front-ends, and microcontroller I/O protection requiring stable component supply across production lifecycles.
Supply support for BAV170QA-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.
The BAV170QA-Q belongs to Nexperia's AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision signal integrity in automotive and industrial sensing systems where nanoamp-level leakage and thermal robustness are mandatory.
FAQ
Is BAV170QA-Q pin-compatible with standard SOT-23 dual diodes?
No - BAV170QA-Q uses a 4-terminal DFN1010D-3 (SOT1215) package with pins 1 (A1), 2 (A2), and 3+4 (CC), differing from 3-pin SOT-23 layouts. Its side-wettable flanks and 0.75 mm pitch require dedicated PCB footprint per Figure 11 in the datasheet; mechanical adaptation is not feasible without redesign.
What is the maximum continuous forward current per diode at 100 °C ambient?
Per Figure 2, the derating curve shows 180 mA maximum forward current when both diodes are loaded at Tamb = 100 °C. At that temperature, single-diode operation remains rated at 220 mA - verified by linear interpolation between 25 °C (320 mA) and 125 °C (120 mA) points on the derating curve.
Does the common cathode (pins 3 and 4) need to be connected to the same net?
Yes - pins 3 and 4 are internally bonded to the same cathode structure and must be shorted externally on the PCB. The dual-pad design enhances thermal conduction and solder joint reliability; splitting them would compromise thermal performance and violate the qualified mounting configuration.
Can BAV170QA-Q replace BAT54S in automotive designs?
Only with validation - BAT54S has higher IR (1 µA typ), larger SOT-323 package, and no AEC-Q101 rating. While electrically similar for basic clamping, BAV170QA-Q's 3 pA leakage, 85 V VRRM, and qualified automotive status make it superior for precision applications; replacement requires requalification of thermal and AOI processes due to different footprint and soldering profile.
BAV170QA-QZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 320mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010D-3
BAV170QA-QZ FAQ
1.How can I place an order for BAV170QA-QZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV170QA-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV170QA-QZ reliable?
The price and inventory of BAV170QA-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV170QA-QZ is usually 5 days.
3.What payment methods are accepted for BAV170QA-QZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV170QA-QZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV170QA-QZ?
BAV170QA-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV170QA-QZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV170QA-QZ?
For technical support, including BAV170QA-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV170QA-QZ requirements.
6.How does Aetrix verify that BAV170QA-QZ is sourced from the original manufacturer or authorized distributors?
All BAV170QA-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV170QA-QZ meets industry standards.
7.What is the process for return or replacement of BAV170QA-QZ?
All BAV170QA-QZ units undergo pre-shipment inspection (PSI). If there is an issue with BAV170QA-QZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV170QA-QZ part is unused and in its original packaging.
Return procedure for BAV170QA-QZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV170QA-QZ Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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