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Nexperia USA Inc. BAV170QAZ
- Part No.:
- BAV170QAZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
BAV170QAZ.pdf
- Description:
- DIODE ARR GP 75V 180MA DFN1010D3
- Quantity:
- Payment:
- Shipping:
Inventory:5,098
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Product details
Overview
BAV170QA from Nexperia is a dual common cathode low-leakage switching diode in a DFN1010D-3 (SOT1215) package, rated for 75 V reverse voltage, 320 mA forward current per diode, and featuring 0.8 µs typical reverse recovery time and 3 pA typical reverse leakage at 75 V - used in precision analog front-ends and low-current signal routing.
For engineers reviewing the BAV170QA datasheet, BAV170QA pinout, BAV170QA application, or BAV170QA equivalent, this part is selected for ultra-low leakage, high-speed switching in space-constrained PCB layouts where AOI-compatible side-wettable flanks and thermal performance under 230 K/W junction-to-solder-point resistance are critical.
Technical Context
The BAV170QA integrates two independent silicon switching diodes sharing a single cathode terminal, enabling compact dual-path rectification or polarity-selective clamping without cross-coupling. Its low 2 pF capacitance and sub-nanosecond trr support RF detector and sample-hold circuit operation up to ~100 MHz.
Designed for surface-mount reflow on FR4 with standard footprint, it leverages side-wettable flanks for automated optical inspection of solder joints and achieves 540 mW total power dissipation with 1 cm² cathode pad - optimized for thermally sensitive low-power sensor nodes and battery-operated instrumentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Reverse Voltage) | 75 V - maximum DC blocking capability per diode at 25 °C; defines safe operating range in bias networks and level-shifting circuits |
| IF (Forward Current) | 320 mA per diode - continuous current handling with derating above 25 °C; supports moderate-signal logic interface and LED drive |
| IR (Reverse Leakage) | 3 pA typical at 75 V, 25 °C - enables nanoampere-level current integrity in high-impedance sensor buffers and reference dividers |
| trr (Reverse Recovery) | 0.8 µs typical - ensures minimal switching distortion in 1–10 MHz signal routing and fast edge detection applications |
| Cd (Diode Capacitance) | 2 pF at 0 V, 1 MHz - preserves signal rise time and minimizes crosstalk in RF sampling and high-frequency multiplexing |
| Rth(j-sp) | 230 K/W - junction-to-solder-point thermal resistance with 1 cm² cathode pad; enables reliable thermal management in dense layouts |
Pinout & Package
Encapsulated in a leadless, ultra-thin DFN1010D-3 (SOT1215) package measuring 1.1 mm × 1.0 mm × 0.37 mm, with side-wettable flanks for AOI-compliant solder joint inspection and enhanced thermal conduction via the exposed cathode pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input terminal for first diode path; connects to signal source or supply rail requiring unidirectional conduction |
| 2 | Anode (Diode 2) | Independent input terminal for second diode path; allows dual-channel clamping or OR-ing without shared anode impedance |
| 3 & 4 | Common Cathode | Shared output node for both diodes; provides low-inductance return path and thermal anchoring to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low reverse leakage | 3 pA typical at 75 V - maintains accuracy in picoampere-range current sources and electrometer-grade measurement paths |
| High-speed switching | 0.8 µs trr - enables clean signal transitions in 10 MHz clock distribution and pulse shaping circuits |
| Miniaturized thermal package | DFN1010D-3 with 0.37 mm height and side-wettable flanks - fits 0402-class board area while supporting AOI and efficient heat transfer |
| Low junction capacitance | 2 pF - reduces loading on high-impedance nodes in RF detector inputs and analog switch control lines |
Applications
| High-Impedance Sensor Interface | Precision Reference Clamping |
|---|---|
Use Scenario: Front-end protection and biasing of pH electrodes, photodiode transimpedance amplifiers, or MEMS sensor signal chains. IC Role / Device Role / Timing Role: Low-leakage clamp diode limiting input swing to ±0.9 V while preserving nanoampere-level bias currents. Use Value: Prevents op-amp saturation without injecting >3 pA error current into 100 MΩ+ sensor impedances. | Use Scenario: Stabilizing voltage references in data acquisition systems using dual-path overvoltage protection. IC Role / Device Role / Timing Role: Dual-anode clamp referencing a common stable ground point to suppress transient excursions on REF+ and REF− lines. Use Value: Maintains <1 ppm reference drift during ESD events by limiting excursion to <1.1 V forward drop at 10 mA. |
| RF Signal Sampling | Low-Power Logic-Level Translation |
Use Scenario: Peak detection and envelope extraction in 10–50 MHz IF stages of portable radios and IoT receivers. IC Role / Device Role / Timing Role: Fast-switching detector diode with minimal capacitive loading on tuned tank circuits. Use Value: Delivers 95% amplitude fidelity at 30 MHz due to 2 pF Cd and 0.8 µs trr, avoiding harmonic distortion. | Use Scenario: Bidirectional level shifting between 1.8 V microcontroller GPIOs and 3.3 V peripheral interfaces in wearables. IC Role / Device Role / Timing Role: Passive dual-diode OR gate implementing open-drain logic translation with no active biasing. Use Value: Enables sub-1 µA quiescent current translation with <10 ns propagation delay and no external pull-up dependency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV199,115 | Higher IR (5 nA typ), larger SOT-323 package (2.1 × 1.25 mm), no side-wettable flanks | Lacks AOI compatibility and thermal performance for ultra-dense layouts | Select when legacy footprint compatibility outweighs leakage and size requirements |
| PMEG3010CEAX | Lower VR (30 V), Schottky architecture (no trr spec), higher Cd (10 pF) | Suitable only for low-voltage, high-capacitance-tolerant applications like USB port protection | Choose only for <30 V systems where ultra-fast switching is unnecessary and leakage <100 nA is acceptable |
Compared with BAV199 and PMEG3010CEAX, the BAV170QA uniquely combines picoampere leakage, sub-microsecond recovery, and AOI-ready DFN packaging - making it the sole option for miniaturized, high-fidelity analog signal conditioning where leakage-induced offset and thermal density are design-limiting factors.
Availability
BAV170QA is available at Aetrix Electronics and suitable for high-impedance sensor interfaces, RF sampling circuits, and low-power logic-level translation requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle continuity.
Supply support for BAV170QA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and consumer markets with scalable manufacturing and rigorous quality systems.
The BAV170QA belongs to Nexperia's precision low-leakage diode product line, engineered specifically for applications demanding nanoampere-level current integrity, high-speed signal fidelity, and ultra-miniature packaging in thermally constrained environments.
FAQ
What is the maximum junction temperature rating for BAV170QA?
The absolute maximum junction temperature (Tj) is 150 °C, verified per IEC 60134 limiting values. Operation above this threshold risks permanent degradation of leakage performance and forward voltage stability. Derating begins at 25 °C ambient, with total power dissipation dropping linearly to zero at 125 °C ambient for single-diode operation on standard FR4.
Is BAV170QA qualified for automotive applications?
No - BAV170QA is explicitly designated as non-automotive qualified per Nexperia's revision history (v.2, October 2025). It lacks AEC-Q101 qualification, automotive-grade process controls, and extended temperature validation. For automotive use, Nexperia recommends its -Q qualified alternatives such as BAV170QA-Q, which undergoes full stress testing per AEC standards.
How does the DFN1010D-3 package support automated optical inspection?
The DFN1010D-3 package features side-wettable flanks - exposed metal terminals along the package edges - enabling camera-based solder joint inspection of fillet profile, wetting angle, and voiding. This eliminates reliance on X-ray for bottom-terminal verification and improves first-pass yield in high-volume SMT lines using standard AOI equipment calibrated for 0402-class components.
Can BAV170QA be used in place of a single discrete diode?
Yes - either anode (Pin 1 or Pin 2) can be used independently with the common cathode (Pins 3 & 4) as a standalone low-leakage diode. The unused anode must be left floating or tied to a non-conflicting potential; no internal coupling exists between the diodes beyond the shared cathode node, preserving isolation of forward voltage and leakage characteristics per channel.
BAV170QAZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 180mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010D-3
BAV170QAZ FAQ
1.How can I place an order for BAV170QAZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV170QAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV170QAZ reliable?
The price and inventory of BAV170QAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV170QAZ is usually 5 days.
3.What payment methods are accepted for BAV170QAZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV170QAZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV170QAZ?
BAV170QAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV170QAZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV170QAZ?
For technical support, including BAV170QAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV170QAZ requirements.
6.How does Aetrix verify that BAV170QAZ is sourced from the original manufacturer or authorized distributors?
All BAV170QAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV170QAZ meets industry standards.
7.What is the process for return or replacement of BAV170QAZ?
All BAV170QAZ units undergo pre-shipment inspection (PSI). If there is an issue with BAV170QAZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV170QAZ part is unused and in its original packaging.
Return procedure for BAV170QAZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV170QAZ Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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