Nexperia USA Inc. BAV199,235

Overview

BAV199,235 from Nexperia is a low-leakage dual series-connected silicon switching diode in SOT23 package, rated for 75 V continuous reverse voltage, 500 mA repetitive peak forward current, and 0.8 µs typical reverse recovery time. It serves as a precision clamping or signal routing element in high-impedance analog front-ends and ESD-sensitive sensor interfaces.

For engineers reviewing the BAV199,235 datasheet, BAV199,235 pinout, BAV199,235 application, or BAV199,235 equivalent, key selection criteria include sub-nA reverse leakage at 150 °C, dual-diode series topology, SOT23 footprint compatibility, and thermal resistance of 500 K/W (junction-to-ambient).

Technical Context

The BAV199,235 integrates two epitaxial silicon diodes in series within a single SOT23-3 package, sharing terminal 3 as K1/A2 - enabling compact bidirectional clamping or level-shifting without external interconnect. Its 3 pA typical reverse leakage at 75 V/150 °C supports ultra-low-current bias networks in precision instrumentation.

With 2 pF typical junction capacitance at 0 V and 0.8 µs trr, it balances speed and noise immunity for <10 MHz signal conditioning paths. The device is not automotive-qualified and operates across −65 °C to +150 °C ambient, with 250 mW total power dissipation on FR4 PCB.

Key Specifications

Pinout & Package

SOT23-3 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch), optimized for reflow soldering on FR4 PCBs with standard footprint per Figure 9.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-diode clamping applications.

Compared with BAV199,235, BAV21,215 trades leakage performance for cost, while MMBD1204 improves speed and voltage rating at the expense of pin compatibility and thermal leakage behavior - making BAV199,235 optimal for high-temperature, low-current precision roles.

Availability

BAV199,235 is available at Aetrix Electronics and suitable for instrumentation signal clamping, ESD interface protection, and precision reference biasing requiring stable component supply across industrial temperature ranges and long-lifecycle production programs.

Supply support for BAV199,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in efficiency, miniaturization, and thermal performance.

The BAV199 series belongs to Nexperia's low-leakage switching diode product line, engineered specifically for precision analog signal conditioning, sensor interface protection, and high-impedance bias network applications where leakage and capacitance dominate design constraints.

FAQ

What is the maximum continuous forward current rating for BAV199,235?

The BAV199,235 is rated for 140 mA maximum continuous forward current when both diodes are loaded simultaneously on an FR4 PCB at 25 °C ambient. Derating is required above 25 °C - e.g., 100 mA at 70 °C ambient - per Figure 1 in the datasheet. This limit reflects thermal dissipation constraints, not electrical capability alone.

Can BAV199,235 be used in automotive applications?

No. The BAV199,235 is explicitly designated as non-automotive qualified in its revision history (v.4, April 2023). It lacks AEC-Q101 qualification, automotive-grade screening, and guaranteed operation under automotive temperature cycling or humidity testing. Automotive designs require Nexperia's -Q variants (e.g., BAV199W-Q).

How does the series-connected diode configuration affect circuit implementation?

The internal series connection (A1–K1/A2–K2) means only three terminals are accessible: A1, K2, and the shared K1/A2 node. This eliminates external wiring between diodes, reducing parasitic inductance and PCB area. However, it prevents independent biasing of each diode - both must operate in the same conduction direction relative to the shared node.

Is the 3 pA reverse leakage value measured per diode or for the entire device?

The 3 pA typical reverse leakage (IR) is specified per diode, measured individually with VR = 75 V and Tj = 150 °C. Since the diodes are in series, total leakage through the device remains ~3 pA - not additive - because the same current flows through both junctions in series configuration.