Infineon Technologies BAV 199 B6327

Overview

BAV199 B6327 from Infineon Technologies is a silicon dual low-leakage switching diode in SOT23 package, configured as two anode-coupled diodes in series, with 80 V reverse voltage rating, 200 mA forward current, and 0.6 µs typical reverse recovery time - used in automotive signal clamping and ESD-protected sensor interfaces.

For engineers reviewing the BAV199 B6327 datasheet, BAV199 B6327 pinout, BAV199 B6327 application, or BAV199 B6327 equivalent, key selection criteria include leakage performance at 150°C (≤80 nA @ VR = 75 V), low capacitance (2 pF @ 0 V), AEC-Q101 qualification, and thermal resistance (RthJS ≤ 360 K/W) for under-hood automotive modules.

Technical Context

The BAV199 B6327 implements a monolithic dual-diode structure with shared cathode connection, enabling compact series-clamp configurations in bidirectional signal lines. Its low IR (5 nA typ. @ 75 V, 25°C) and stable high-temperature leakage (80 nA max @ 150°C) support precision biasing in analog front-ends.

Designed for medium-speed switching (trr = 0.6–1.5 µs), it avoids minority-carrier storage delay typical of standard rectifiers while maintaining robust surge capability (IFSM = 4.5 A for 1 µs). The SOT23 package supports automated placement and meets RoHS-compliant lead-free assembly requirements.

Key Specifications

Pinout & Package

SOT23-3 package: 3-pin surface-mount plastic case with gull-wing leads, 1.3 mm pitch, 2.9 mm × 1.3 mm footprint, and 1.15 mm height. Pin 1 = Anode 1, Pin 2 = Cathode (common), Pin 3 = Anode 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-leakage diode applications.

Compared with BAV199 B6327, BAV99,115 trades leakage for speed, while MMBD7000LT1G matches electrical specs but lacks automotive qualification - making BAV199 B6327 the only option meeting both low-leakage and AEC-Q101 requirements in one package.

Availability

BAV199 B6327 is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial analog front-ends, and USB 2.0 data line protection requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAV199 B6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial sensors, with global manufacturing and R&D centers.

The BAV199 belongs to Infineon's discrete silicon diode product line, engineered specifically for high-reliability automotive signal conditioning and ESD protection where low leakage, thermal stability, and qualification compliance are mandatory.

FAQ

What is the maximum junction temperature and how does it affect continuous operation?

The BAV199 B6327 has a rated junction temperature of 150°C. At this limit, its reverse leakage reaches 80 nA at 75 V, and forward voltage drops ~2 mV/°C. Continuous operation requires thermal design ensuring junction temperature stays within this limit - typically achieved using PCB copper area and RthJS ≤ 360 K/W to keep Tj ≤ 150°C at 330 mW dissipation.

Is the BAV199 B6327 suitable for bidirectional ESD protection on differential lines?

Yes - its series dual-diode configuration with common cathode (Pin 2) enables symmetrical ±Vf clamping on both sides of a differential pair. When placed between D+ and D− with Pin 2 grounded, it provides balanced 0.9 V turn-on in either direction, meeting IEC 61000-4-2 Level 4 (±8 kV contact) without skew or duty-cycle distortion.

How does the reverse recovery time impact performance in 1 MHz signal paths?

With trr = 0.6 µs typical, the BAV199 B6327 fully recovers within 0.6 µs after reverse bias is applied - allowing clean switching up to ~500 kHz. At 1 MHz, residual minority carriers may cause minor tail current, but its low CT (2 pF) and fast turn-off maintain >60 dB isolation in RF detector applications up to 900 MHz.

Can the BAV199 B6327 replace a single discrete diode in a circuit?

No - it is a dual-diode device with fixed series configuration and common cathode (Pin 2). Using only one diode requires leaving the unused anode floating, which risks parasitic coupling and violates recommended layout. For single-diode replacement, use BAV20 or BAV21; for dual functionality, retain full BAV199 B6327 implementation with both anodes actively driven.