Infineon Technologies BAV199E6433HTMA1

Overview

BAV199E6433HTMA1 from Infineon Technologies is a silicon low-leakage dual diode in series configuration housed in an SOT23 package, rated for 80 V reverse voltage, 200 mA forward current, and 0.6 µs typical reverse recovery time-used in automotive signal clamping and ESD protection circuits.

For engineers reviewing the BAV199E6433HTMA1 datasheet, BAV199E6433HTMA1 pinout, BAV199E6433HTMA1 application, or BAV199E6433HTMA1 equivalent, key selection criteria include reverse leakage at 150°C (≤80 nA), VF at 150 mA (≤1250 mV), series-diode topology for bidirectional clamping, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

The BAV199E6433HTMA1 integrates two identical epitaxial planar silicon switching diodes in a single SOT23-3L package with anode–cathode–anode terminal arrangement. Its series configuration enables symmetrical clamping across signal lines without external biasing.

Designed for low-leakage operation, it delivers IR ≤5 nA at VR = 75 V and TA = 25°C, rising to ≤80 nA at TA = 150°C-critical for precision sensor front-ends and battery-monitoring circuits where dark current must be minimized.

Key Specifications

Pinout & Package

SOT23-3L plastic surface-mount package with gull-wing leads; 1.3 mm × 2.9 mm footprint; 1.15 mm height; RoHS-compliant, lead-free termination.

Key Features

Applications

Availability

BAV199E6433HTMA1 is available at Aetrix Electronics and suitable for automotive LIN bus protection, industrial sensor signal conditioning, and battery management system voltage monitoring requiring stable component supply across extended temperature ranges.

Supply support for BAV199E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The BAV199 series belongs to Infineon's automotive-qualified discrete diode portfolio, engineered specifically for robust signal integrity in harsh-environment vehicle networks and sensor interfaces.

FAQ

What is the pin 1 marking convention for BAV199E6433HTMA1?

Pin 1 is identified by a small dot or notch on the top surface near the lead edge; the device uses standard SOT23-3L orientation with pin 1 at bottom-left when viewed with marking side up and tab facing away. The marking "JYs" appears adjacent to pin 1 and confirms the BAV199 type and date code.

Does BAV199E6433HTMA1 support bidirectional ESD protection?

Yes-it implements a series-connected dual-diode structure (A–K–A) that forms a symmetric clamp between signal and reference rails. When used with pull-up/pull-down biasing, it provides ±15 V clamping for IEC 61000-4-2 events without polarity dependence.

How does thermal resistance RthJS impact layout for BAV199E6433HTMA1?

RthJS ≤360 K/W assumes direct thermal conduction from die to solder joint. Layout must provide ≥25 mm² of 1-oz copper connected to pin 2 (common node) to achieve this rating; insufficient copper raises junction temperature by >20°C at 150 mA DC, risking derating beyond 125°C ambient.

Is BAV199E6433HTMA1 compatible with reflow profiles for lead-free assembly?

Yes-the device is qualified for Pb-free reflow per JEDEC J-STD-020 Rev E, supporting peak temperatures up to 260°C for ≤30 seconds. The MSL level is 1 (unlimited floor life), and no pre-bake is required prior to standard SMT placement.