Diodes Incorporated BAV199Q-13-F

Overview

BAV199Q-13-F from Diodes Incorporated is a dual low-leakage silicon switching diode in SOT23 package, configured as two independent anode-cathode junctions sharing a common cathode (common-cathode dual diode), with 85 V peak reverse voltage, ≤5.0 nA leakage at 75 V, and 3.0 µs reverse recovery time. It serves in automotive signal clamping, ESD protection, and precision biasing circuits where low IR and fast trr are critical.

For engineers reviewing the BAV199Q-13-F datasheet, BAV199Q-13-F pinout, BAV199Q-13-F application, or BAV199Q-13-F equivalent, key selection criteria include reverse leakage at elevated temperature, common-cathode topology compatibility, AEC-Q101 qualification status, and SOT23 thermal derating behavior under pulsed forward current conditions.

Technical Context

The BAV199Q-13-F integrates two discrete planar epitaxial silicon p-n junctions in a single SOT23-3 package with shared cathode terminal (Pin 3), enabling compact dual-channel protection without external node routing. Its low 5.0 nA IR at VR = 75 V and TJ = +25°C supports high-impedance sensing nodes, while 3.0 µs trr allows operation in <1 MHz switching applications.

Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements including HTGB, HTRB, and TCT, and is manufactured in IATF16949-certified facilities with lead-free, halogen-free "Green" molding compound (Br+Cl <1500 ppm, Sb <1000 ppm). Thermal resistance RθJA is 500 °C/W on FR-4 board with recommended pad layout.

Key Specifications

Pinout & Package

SOT23-3 plastic surface-mount package (JEDEC TO-236AB), 2.9 mm × 1.3 mm × 1.0 mm, matte tin-plated alloy 42 leadframe, moisture sensitivity level 1 (J-STD-020).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-leakage diode applications.

Compared with BAV21W-7-F and NSR0230HT1G, the BAV199Q-13-F uniquely delivers dual common-cathode topology with sub-5 nA leakage and 85 V rating-enabling compact, high-fidelity protection in automotive signal chains where discrete pairing would increase board area and parasitic mismatch.

Availability

BAV199Q-13-F is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and consumer USB protection circuits requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle support.

Supply support for BAV199Q-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAV199 series belongs to Diodes' automotive-qualified discrete diode product line, engineered specifically for signal integrity preservation and robust transient protection in harsh-environment electronic control units.

FAQ

What is the pin configuration of BAV199Q-13-F?

BAV199Q-13-F uses SOT23-3 package with Pin 1 = Anode 1, Pin 2 = Anode 2, Pin 3 = Common Cathode. This configuration is confirmed in the DS30232 Rev. 11 top-view schematic and internal diagram on page 2 of the datasheet. Polarity marking is indicated by a cathode band adjacent to Pin 3.

Is BAV199Q-13-F suitable for 125°C ambient operation?

Yes - BAV199Q-13-F is rated for TJ = –55°C to +150°C and has been validated per AEC-Q101 for high-temperature reliability. At TA = +125°C, its power dissipation must be derated to ~100 mW (per Fig. 1), and leakage increases to ≤80 nA at VR = 75 V, which remains within functional limits for most clamping applications.

How does BAV199Q-13-F differ from standard BAV199-7-F?

BAV199Q-13-F is the automotive-grade variant: it carries AEC-Q101 qualification, PPAP capability, and is manufactured in IATF16949-certified facilities. The "Q" suffix denotes automotive change control and green material compliance; electrically and physically, it is identical to BAV199-7-F except for traceability and process controls.

Can BAV199Q-13-F replace BAT54S in a common-cathode application?

No - BAT54S is a Schottky diode with VF ≈ 0.3 V but IR ≈ 1 µA at 25 V, making it unsuitable where ultra-low leakage is required. BAV199Q-13-F offers 200× lower IR at 75 V (5 nA vs. >1000 nA), but higher VF (1.1 V @ 50 mA); substitution requires verifying that forward drop and leakage specs align with circuit bias and accuracy requirements.