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Nexperia USA Inc. BAV199QC-QZ
- Part No.:
- BAV199QC-QZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
BAV199QC-QZ.pdf
- Description:
- DIODE ARR GP 75V 215MA DFN1412D3
- Quantity:
- Payment:
- Shipping:
Inventory:8,073
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Product details
Overview
BAV199QC-Q from Nexperia is a low-leakage, medium-speed switching double diode in a DFN1412D-3 (SOT8009) leadless package, featuring 5 nA max reverse leakage at 75 V, 0.8 µs typical reverse recovery time, and 2 pF capacitance. It serves as a dual common-cathode/anode-configured discrete switching element in automotive signal routing and precision bias networks.
For engineers reviewing the BAV199QC-Q datasheet, BAV199QC-Q pinout, BAV199QC-Q application, or BAV199QC-Q equivalent, this part supports AEC-Q101-compliant designs requiring ultra-low leakage, compact footprint, side-wettable flanks for AOI, and dual-diode integration in space-constrained PCB layouts.
Technical Context
This double diode integrates two independent epitaxial PN junctions in a single 3-terminal DFN package with shared terminal (Pin 3 = K1/A2), enabling common-cathode or common-anode configurations without external interconnect. Its 0.8 µs trr and 5 nA IR are specified under standardized IF/IR test conditions per IEC 60747-2.
The device operates across −55 °C to +150 °C ambient, with thermal resistance Rth(j-a) of 375 K/W on standard FR4 and 210 K/W with enhanced cathode pad, supporting reliable power dissipation up to 335 mW (single diode) or 595 mW (derated double-diode mode).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse leakage current | 5 nA max at VR = 75 V, Tj = 25 °C - enables stable biasing in high-impedance sensor interfaces |
| Reverse recovery time | 0.8 µs typ at IF = IR = 10 mA, RL = 100 Ω - supports >1 MHz switching in signal conditioning paths |
| Diode capacitance | 2 pF typ at VR = 0 V, f = 1 MHz - minimizes signal coupling in RF-adjacent analog routing |
| Repetitive peak reverse voltage | 85 V - withstands transient surges in 12 V/24 V automotive supply rails |
| Forward current (per diode) | 215 mA max continuous - sufficient for LED indicator drivers and logic-level clamping |
| Package footprint | 1.4 mm × 1.2 mm - reduces board area by >40% vs. SOT23-3 while maintaining solder-joint inspectability |
Pinout & Package
DFN1412D-3 (SOT8009) is a 3-terminal, leadless, ultra-small plastic package with side-wettable flanks (SWF), 0.8 mm pitch, 0.48 mm body height, and 0.5 mm max profile - optimized for AOI and high-density automotive PCB assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first diode; connects to signal source in clamp or steering configuration |
| 2 | Cathode (Diode 2) | Output node for second diode; provides reference path or return for bidirectional protection |
| 3 | Cathode (Diode 1) / Anode (Diode 2) | Shared terminal enabling common-cathode (A1–K1/K2) or common-anode (A1/A2–K2) topologies |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Qualified for automotive applications including engine control, body electronics, and ADAS sensor interfaces |
| Side-wettable flanks | Enables automated optical inspection (AOI) of solder joints without X-ray, reducing post-reflow QA cost |
| Low thermal resistance | Rth(j-sp) = 50 K/W to cathode tab - improves thermal coupling to copper pour for sustained 125 mA double-diode operation |
| Ultra-low leakage | 5 nA IR at 75 V ensures minimal current loss in battery-backed real-time clock backup circuits |
| Small footprint | 1.4 mm × 1.2 mm area - allows placement adjacent to microcontroller GPIOs without trace crowding |
Applications
| Automotive Signal Clamping | High-Impedance Sensor Biasing |
|---|---|
Use Scenario: Protecting LIN bus transceiver inputs from ESD and load-dump transients in door module ECUs. IC Role / Device Role / Timing Role: Dual-diode steering network providing bidirectional clamping to VCC and GND rails. Use Value: 85 V VRRM and 5 nA leakage prevent false triggering while maintaining rail integrity during 100 ns transients. |
Use Scenario: Biasing photodiode anodes in ambient light sensors for automatic headlight control. IC Role / Device Role / Timing Role: Low-leakage blocking diode isolating bias voltage from measurement node. Use Value: 5 nA IR avoids injection error in picoampere-range photocurrent measurement at 25 °C. |
| LED Indicator Steering | Logic-Level Voltage Translation |
Use Scenario: Driving dual-color LEDs from a single GPIO using active-low and active-high outputs. IC Role / Device Role / Timing Role: Common-cathode dual diode enabling independent anode control with shared cathode sink. Use Value: 0.8 µs trr supports PWM dimming up to 1.25 MHz without visible ghosting or cross-conduction. |
Use Scenario: Level-shifting 3.3 V MCU outputs to 5 V peripheral enable lines in infotainment head units. IC Role / Device Role / Timing Role: Forward-biased diode drop compensation between logic families. Use Value: 1.0 V VF at 10 mA provides predictable 2.3 V offset, stable across −40 °C to +125 °C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage double diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV199W-Q | Same die, but in SOT323 package (larger 2.1 mm × 1.25 mm footprint, no side-wettable flanks) | Lacks AOI support; unsuitable for high-volume automotive SMT lines requiring solder-joint verification | Select when legacy board layout prohibits DFN rework or when thermal mass requirements exceed DFN capability |
| PDTC143ZC-Q | PNP digital transistor with integrated 4.7 kΩ base resistor; not a diode - functions as saturated switch, not passive clamp | Used for active pull-down, not passive voltage limiting; higher leakage (~100 nA) and slower turn-off | Choose only if circuit requires gain or logic inversion; not a functional replacement for passive clamping or bias isolation |
Compared with BAV199W-Q, the BAV199QC-Q saves 42% board area and enables AOI; versus PDTC143ZC-Q, it delivers 20× lower leakage and 10× faster recovery - critical for precision analog and high-frequency signal integrity.
Availability
BAV199QC-Q is available at Aetrix Electronics and suitable for automotive ECU design, sensor interface modules, and compact LED driver circuits requiring stable component supply, AEC-Q101 compliance, and side-wettable-flank manufacturability.
Supply support for BAV199QC-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with core expertise in automotive-grade components and advanced packaging.
The BAV199QC-Q belongs to Nexperia's AEC-Q101-qualified low-leakage switching diode product line, engineered specifically for automotive signal integrity, ESD protection, and space-constrained bias networks where leakage, speed, and package reliability are jointly critical.
FAQ
What is the maximum continuous forward current rating per diode?
The BAV199QC-Q supports 215 mA maximum continuous forward current per diode at Tamb = 25 °C on a standard FR4 PCB. Derating applies above 25 °C: at 100 °C ambient, max current drops to approximately 125 mA for single-diode operation, as defined in Figure 1 of the datasheet.
Is Pin 3 truly bidirectional (K1 and A2 simultaneously)?
Yes - Pin 3 is internally bonded to both the cathode of Diode 1 and the anode of Diode 2, enabling true dual-diode functionality in one package. This allows common-cathode (Pins 1 & 3 as anodes, Pin 2 as shared cathode) or common-anode (Pins 2 & 3 as cathodes, Pin 1 as shared anode) configurations without external wiring.
Does the 5 nA leakage specification apply over temperature?
No - the 5 nA maximum reverse current is specified only at Tj = 25 °C and VR = 75 V. At Tj = 150 °C, IR increases to 80 nA max (Table 7), reflecting silicon's intrinsic carrier generation; designers must verify leakage impact at worst-case junction temperature in their thermal environment.
Can BAV199QC-Q be used in place of single-diode SOT23 packages?
Only if the circuit topology explicitly uses both diodes - e.g., dual-rail clamping or current-steering. Replacing a single SOT23 diode with BAV199QC-Q wastes one diode and introduces unused terminals; for single-diode needs, Nexperia's BAV199W-Q or BAV21W-Q are direct footprint-compatible alternatives.
BAV199QC-QZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN1412D-3
BAV199QC-QZ FAQ
1.How can I place an order for BAV199QC-QZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV199QC-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV199QC-QZ reliable?
The price and inventory of BAV199QC-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV199QC-QZ is usually 5 days.
3.What payment methods are accepted for BAV199QC-QZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV199QC-QZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV199QC-QZ?
BAV199QC-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV199QC-QZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV199QC-QZ?
For technical support, including BAV199QC-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV199QC-QZ requirements.
6.How does Aetrix verify that BAV199QC-QZ is sourced from the original manufacturer or authorized distributors?
All BAV199QC-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV199QC-QZ meets industry standards.
7.What is the process for return or replacement of BAV199QC-QZ?
All BAV199QC-QZ units undergo pre-shipment inspection (PSI). If there is an issue with BAV199QC-QZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV199QC-QZ part is unused and in its original packaging.
Return procedure for BAV199QC-QZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV199QC-QZ Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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