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Nexperia USA Inc. BAV199QCZ
- Part No.:
- BAV199QCZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
BAV199QCZ.pdf
- Description:
- DIODE ARR GP 75V 215MA DFN1412D3
- Quantity:
- Payment:
- Shipping:
Inventory:6,614
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Product details
Overview
BAV199QCZ from Nexperia is a low-leakage, medium-speed double diode in a DFN1412D-3 (SOT8009) leadless SMD package, configured as two independent diodes sharing a common terminal (A1–K1/A2–K2). It delivers 5 nA reverse leakage at 75 V, 0.8 µs typical reverse recovery time, and 2 pF capacitance - enabling precision signal routing and low-current hold-off in space-constrained analog front-ends.
For engineers reviewing the BAV199QCZ datasheet, BAV199QCZ pinout, BAV199QCZ application, or BAV199QCZ equivalent, this dual diode supports high-fidelity voltage clamping, low-noise bias network isolation, and AOI-compatible board assembly where ultra-small footprint and thermal reliability are critical.
Technical Context
The BAV199QCZ integrates two epitaxial silicon switching diodes in a single 1.4 mm × 1.2 mm × 0.48 mm DFN package with side-wettable flanks. Its shared cathode/anode (Pin 3) enables compact series–shunt or dual-path configurations without external interconnects.
Designed for stable operation up to 150 °C junction temperature, it maintains ≤5 nA IR at 75 V and exhibits 375 K/W junction-to-ambient thermal resistance on standard FR4 - supporting continuous forward current up to 215 mA per diode at 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse leakage (IR) | 5 nA at VR = 75 V, Tj = 25 °C - ensures minimal standby current in high-impedance sensing nodes |
| Reverse recovery time (trr) | 0.8 µs typical - supports clean switching in <1 MHz signal conditioning and sample-hold circuits |
| Diode capacitance (Cd) | 2 pF at VR = 0 V, f = 1 MHz - preserves signal integrity in RF detector and fast comparator inputs |
| Repetitive peak reverse voltage (VRRM) | 85 V - provides margin for transient suppression in 24 V industrial I/O protection |
| Forward current (IF) | 215 mA per diode - sustains reliable conduction in LED bias and logic-level translation paths |
| Package | DFN1412D-3 (SOT8009), 0.8 mm pitch, 0.48 mm height - enables AOI inspection and 30% smaller footprint vs. SOT23-3 |
Pinout & Package
DFN1412D-3 (SOT8009) is a 3-terminal, leadless plastic package with side-wettable flanks, measuring 1.4 mm × 1.2 mm × 0.48 mm and optimized for reflow soldering and automated optical inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for first diode path; connects to signal source in clamp or steering configuration |
| 2 | Cathode of Diode 2 (K2) | Output node for second diode path; routes clamped or rectified output to load or reference |
| 3 | Common terminal: Cathode of Diode 1 (K1) & Anode of Diode 2 (A2) | Shared node enabling compact dual-diode topologies (e.g., series-connected or back-to-back arrangements) |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low reverse leakage | 5 nA max at 75 V enables accurate DC biasing in photodiode amplifiers and precision voltage references |
| Side-wettable flanks | Facilitates automated optical inspection of solder joints - eliminating X-ray requirement for production line QA |
| Low thermal resistance to solder point | 210 K/W Rth(j-sp) allows sustained 125 mA double-diode operation on standard FR4 without thermal derating |
| Sub-1 µs reverse recovery | 0.8 µs trr supports clean edge transitions in pulse-width modulated feedback loops and analog multiplexers |
| Minimal package height | 0.48 mm body height fits under low-profile shields and enables stacking in multi-layer sensor modules |
Applications
| Photodiode Bias Network | Industrial I/O Protection |
|---|---|
Use Scenario: Maintaining stable reverse bias across a high-impedance photodiode while rejecting dark current drift. IC Role / Device Role / Timing Role: Low-leakage voltage clamp and bias path isolator. Use Value: 5 nA IR prevents >1 mV offset error in transimpedance amplifier input stage at 200 MΩ feedback. |
Use Scenario: Protecting 24 V PLC analog inputs against ESD and field-induced transients. IC Role / Device Role / Timing Role: Fast-recovery dual-path transient suppressor. Use Value: 0.8 µs trr limits clamping delay to <10 ns rise-time distortion in 10 kHz sensor signal chains. |
| RF Detector Front-End | Logic-Level Translation |
Use Scenario: Demodulating low-amplitude RF envelope signals in sub-GHz ISM band receivers. IC Role / Device Role / Timing Role: Low-capacitance signal rectifier and DC restoration element. Use Value: 2 pF Cd minimizes loading on 50 Ω source impedance, preserving detector sensitivity above –20 dBm. |
Use Scenario: Level-shifting between 1.8 V microcontroller GPIO and 3.3 V sensor interface lines. IC Role / Device Role / Timing Role: Bidirectional voltage limiter and fault-isolation diode pair. Use Value: Shared Pin 3 enables compact dual-rail clamping without discrete interconnect, reducing layout area by 40% vs. two SOT23 diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage dual diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV199W-Q | Same die, but in SOT323 package (2.1 mm × 1.25 mm); higher Rth(j-a) = 450 K/W; no side-wettable flanks | Lacks AOI support; requires larger PCB area; less suitable for ultra-dense layouts | Select when legacy SMT process lacks DFN capability or thermal demand is below 50 mA per diode |
| PMEG3005EH,115 | Single Schottky diode (30 V VRRM, 500 mA IF); 0.35 V VF; no dual configuration; 100× higher IR (500 nA) | Cannot replicate shared-terminal dual-diode topology; unsuitable for bidirectional clamping or bias splitting | Choose only for high-current, low-VF forward conduction - not as functional replacement for BAV199QCZ's dual low-leakage role |
Compared with BAV199W-Q, the BAV199QCZ offers 30% smaller footprint and AOI compatibility; versus PMEG3005EH, it provides true dual-diode functionality with 100× lower leakage - making it irreplaceable in precision analog signal conditioning where topology and leakage are design-critical.
Availability
BAV199QCZ is available at Aetrix Electronics and suitable for photodiode bias networks, industrial I/O protection circuits, and RF detector front-ends requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for BAV199QCZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, mobile, and computing applications.
The BAV199QCZ belongs to Nexperia's low-leakage general-purpose diode product line, engineered specifically for precision analog signal integrity, compact board space, and automated manufacturing compatibility in high-reliability industrial systems.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The BAV199QCZ has a rated maximum junction temperature of 150 °C. Continuous operation at this limit requires thermal design that maintains junction-to-ambient temperature rise within specification - typically achieved using ≥1 cm² copper pour under Pin 3 on FR4 PCB, yielding 210 K/W Rth(j-sp) and enabling 125 mA double-diode conduction at 25 °C ambient.
Can Pin 3 be used as a thermal pad for heat dissipation?
No - Pin 3 is an electrical terminal (shared K1/A2), not a dedicated thermal pad. While it contributes to thermal conduction due to its large copper area, its primary function is circuit connectivity. Thermal performance relies on solder joint quality and PCB copper layout beneath all three terminals, especially Pin 3's 1.2 mm × 0.8 mm contact surface.
Is the BAV199QCZ suitable for use in automotive applications?
No - the BAV199QCZ is not AEC-Q200 qualified and is explicitly designated for industrial and consumer applications. Nexperia's documentation states non-automotive qualification, and the device lacks automotive-grade stress testing, extended temperature validation, and failure-in-time (FIT) reporting required for vehicle systems.
How does the shared terminal (Pin 3) affect circuit layout in dual-diode configurations?
Pin 3 enables direct series or back-to-back diode connections without external traces - e.g., A1→K1/A2→K2 forms a cascaded clamp, while A1→K1/A2←K2 creates a bidirectional limiter. This reduces parasitic inductance by >60% versus discrete SOT23 placement and eliminates routing congestion in tight analog sections.
BAV199QCZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN1412D-3
BAV199QCZ FAQ
1.How can I place an order for BAV199QCZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV199QCZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV199QCZ reliable?
The price and inventory of BAV199QCZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV199QCZ is usually 5 days.
3.What payment methods are accepted for BAV199QCZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV199QCZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV199QCZ?
BAV199QCZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV199QCZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV199QCZ?
For technical support, including BAV199QCZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV199QCZ requirements.
6.How does Aetrix verify that BAV199QCZ is sourced from the original manufacturer or authorized distributors?
All BAV199QCZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV199QCZ meets industry standards.
7.What is the process for return or replacement of BAV199QCZ?
All BAV199QCZ units undergo pre-shipment inspection (PSI). If there is an issue with BAV199QCZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV199QCZ part is unused and in its original packaging.
Return procedure for BAV199QCZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV199QCZ Tags
-
BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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