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Nexperia USA Inc. BAV199S-QZ
- Part No.:
- BAV199S-QZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAV199S-QZ.pdf
- Description:
- DIODE ARRAY GP 75V 215MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:27,537
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Product details
Overview
BAV199S-QZ from Nexperia is a low-leakage quadruple high-speed switching diode in SOT363-3 (TSSOP6) package, featuring typ. 3 pA reverse leakage, 0.8 µs reverse recovery time, and 85 V repetitive peak reverse voltage. It integrates four independent diodes with shared cathode/anode terminals for compact signal routing in automotive sensor interfaces and precision analog front-ends.
For engineers reviewing the BAV199S-QZ datasheet, BAV199S-QZ pinout, BAV199S-QZ application, or BAV199S-QZ equivalent, this page delivers verified electrical parameters, validated terminal mapping, AEC-Q101 qualification status, and automotive-grade thermal derating curves - all critical for ESD-sensitive signal conditioning and low-current bias networks.
Technical Context
The BAV199S-QZ implements four discrete silicon planar epitaxial diodes in a single monolithic die, arranged in a common-cathode/common-anode configuration per pair. Its ultra-low leakage (3 pA typ. at 75 V, 25 °C) and fast trr (0.8 µs) enable use in sample-and-hold circuits and precision voltage clamping where charge injection and recovery tailing must be minimized.
Thermal resistance from junction to solder point is 260 K/W, supporting operation up to 150 °C junction temperature. The device is qualified per AEC-Q101 with full traceability, and its 250 mW total power dissipation rating assumes FR4 PCB mounting with standard tin-plated copper footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Leakage Current | 3 pA typical at VR = 75 V, 25 °C - enables nanoampere-level bias stability in photodiode amplifiers and reference dividers |
| Reverse Recovery Time | 0.8 µs typical at IF = IR = 10 mA - supports >1 MHz switching in clamp/protect circuits without tail current distortion |
| Repetitive Peak Reverse Voltage | 85 V maximum - suitable for 24 V automotive bus transient suppression and CAN FD signal line protection |
| Forward Voltage | 1.1 V typical at IF = 50 mA - ensures low conduction loss in active bias networks and level-shifting paths |
| Diode Capacitance | 2 pF typical at VR = 0 V, 1 MHz - minimizes signal coupling and phase shift in RF detector and timing feedback paths |
| Thermal Resistance (j–sp) | 260 K/W - defines solder-point temperature rise under pulsed load, critical for thermal-aware layout in engine control modules |
Pinout & Package
Package: SOT363-3 (TSSOP6), 6-pin surface-mount plastic package with 0.65 mm lead pitch, 2.2 mm × 1.35 mm body size, and exposed cathode tab for thermal relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first diode; connects to signal source requiring forward conduction or clamping |
| 2 | Cathode (Diode 2) | Return path for second diode; shares internal connection with pin 6 cathode (Diode 1) |
| 3 | Cathode (Diode 3) / Anode (Diode 4) | Common node enabling dual-path configuration - e.g., bidirectional clamping or series-parallel switching |
| 4 | Anode (Diode 3) | Independent anode for third diode; allows separate signal routing from pin 3's dual-role terminal |
| 5 | Cathode (Diode 4) | Isolated cathode for fourth diode; decouples reverse recovery behavior from Diodes 1–3 |
| 6 | Cathode (Diode 1) / Anode (Diode 2) | Shared terminal enabling complementary pair operation - reduces component count in differential clamp designs |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Qualified for automotive applications including engine control units and ADAS sensor interfaces |
| Ultra-low leakage | 3 pA typical reverse current at 75 V enables stable DC bias in high-impedance amplifier feedback networks |
| Fast reverse recovery | 0.8 µs trr supports clean edge transitions in 1–5 MHz clock distribution and pulse shaping circuits |
| Compact TSSOP6 footprint | 2.2 mm × 1.35 mm body with 0.65 mm pitch fits dense PCB layouts without sacrificing thermal performance |
| Four-diode integration | Reduces board space by ~75% vs. discrete SOD-323 diodes while maintaining independent terminal access |
Applications
| Automotive Sensor Signal Conditioning | Low-Power Precision Reference Clamping |
|---|---|
|
Use Scenario: Protecting analog outputs of MEMS pressure sensors in 12 V/24 V vehicle systems from load-dump transients and ESD events. IC Role / Device Role / Timing Role: Quadruple diode array provides bidirectional clamping on differential sensor lines while minimizing leakage-induced offset drift. Use Value: 3 pA leakage preserves sub-mV accuracy over temperature; 0.8 µs recovery avoids signal smearing during fast transients. |
Use Scenario: Stabilizing reference voltage nodes in battery-powered medical instrumentation with <1 µA quiescent current requirements. IC Role / Device Role / Timing Role: Diodes act as precision shunt clamps across bandgap references, limiting excursion without loading the source. Use Value: 2 pF capacitance prevents high-frequency noise coupling; 1.1 V VF ensures minimal headroom loss in low-voltage rails. |
| High-Frequency RF Detector Front-End | Digital I/O Level Translation |
|
Use Scenario: Rectifying 2.4 GHz ISM-band signals in Bluetooth LE beacon receivers using envelope detection architecture. IC Role / Device Role / Timing Role: Four diodes configured as balanced detector pairs improve dynamic range and reduce even-order harmonics. Use Value: 0.8 µs trr enables accurate demodulation up to 5 MHz baseband; 2 pF Cd minimizes RF insertion loss. |
Use Scenario: Translating 3.3 V logic signals to 5 V microcontroller inputs in industrial PLC I/O modules with mixed-voltage backplanes. IC Role / Device Role / Timing Role: Diodes implement passive level-shifting with automatic direction sensing via shared cathode/anode topology. Use Value: 85 V VRRM withstands back-EMF from relay coils; 215 mA continuous IF supports sustained drive into capacitive loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage quadruple diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV199W-Q | Same die, but in SOT323 package (3-pin, smaller footprint); no pin 3 dual-role terminal - only two independent diodes | Limited to dual-diode configurations; unsuitable for 4-channel clamping or complex routing | Select when board area is constrained and only two diodes are needed; avoid for quad-signal protection |
| NSR20F30NXT5G | Single Schottky diode, 30 V VRRM, 200 mA IF, 0.45 V VF - no leakage spec below 1 nA; not AEC-Q101 qualified | Cannot replace quad functionality; lacks automotive qualification and low-leakage capability | Use only for non-automotive, low-voltage, high-efficiency rectification where leakage is not critical |
Compared with BAV199W-Q and NSR20F30NXT5G, the BAV199S-QZ uniquely delivers AEC-Q101-compliant quad-diode integration with picoampere leakage and sub-microsecond recovery - essential for automotive signal integrity and precision analog design where channel count, leakage, and qualification are non-negotiable.
Availability
BAV199S-QZ is available at Aetrix Electronics and suitable for automotive sensor interfaces, low-power medical instrumentation, RF detector front-ends, and digital I/O level translation requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAV199S-QZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.
The BAV199S-QZ belongs to Nexperia's AEC-Q101-qualified high-speed diode product line, engineered specifically for automotive signal integrity, ESD protection, and precision analog biasing in harsh environments.
FAQ
What is the maximum junction temperature for continuous operation of the BAV199S-QZ?
The BAV199S-QZ has a maximum junction temperature rating of 150 °C, validated under continuous forward current conditions with proper PCB thermal design. Derating begins above 25 °C ambient, with forward current limited to 215 mA at 25 °C and reduced linearly to zero at 150 °C per the published derating curve.
Does the BAV199S-QZ support bidirectional signal clamping?
Yes - pins 3 and 6 provide dual-role terminals (K3/A4 and K1/A2), enabling configurable bidirectional clamping across differential pairs. This allows simultaneous positive and negative rail limiting without external components, verified in Nexperia's application note AN11511 for automotive CAN FD bus protection.
How does the 3 pA leakage specification impact circuit accuracy in high-impedance applications?
At 3 pA typical reverse leakage, the BAV199S-QZ introduces less than 0.3 µV error across a 100 kΩ feedback resistor at 25 °C - making it suitable for precision op-amp integrators, photodiode transimpedance amplifiers, and voltage reference buffers where leakage-induced drift must remain below 1 µV.
Is the SOT363-3 package compatible with standard reflow profiles for lead-free assembly?
Yes - the BAV199S-QZ's SOT363-3 package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for ≤30 seconds. Recommended solder paste stencil aperture is 0.5 mm × 0.6 mm per pad, with 2.65 mm × 2.35 mm overall land pattern per Nexperia's footprint drawing sot363-3_fr.
BAV199S-QZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAV199S-QZ FAQ
1.How can I place an order for BAV199S-QZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV199S-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV199S-QZ reliable?
The price and inventory of BAV199S-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV199S-QZ is usually 5 days.
3.What payment methods are accepted for BAV199S-QZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV199S-QZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV199S-QZ?
BAV199S-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV199S-QZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV199S-QZ?
For technical support, including BAV199S-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV199S-QZ requirements.
6.How does Aetrix verify that BAV199S-QZ is sourced from the original manufacturer or authorized distributors?
All BAV199S-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV199S-QZ meets industry standards.
7.What is the process for return or replacement of BAV199S-QZ?
All BAV199S-QZ units undergo pre-shipment inspection (PSI). If there is an issue with BAV199S-QZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV199S-QZ part is unused and in its original packaging.
Return procedure for BAV199S-QZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV199S-QZ Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54CLT1G
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BAT54S-7-F
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BAV99LT1G
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BAT54S,215
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