Diodes Incorporated BAV199W-7

Overview

BAV199W-7 from Diodes Incorporated is a dual SOT323 surface-mount low-leakage switching diode pair with 85 V peak reverse voltage, ≤5.0 nA leakage at 75 V and 25°C, 3.0 μs reverse recovery time, and 200 mW total power dissipation - used in precision signal clamping, battery protection, and analog front-end biasing circuits.

For engineers reviewing the BAV199W-7 datasheet, BAV199W-7 pinout, BAV199W-7 application, or BAV199W-7 equivalent, key selection criteria include ultra-low IR (≤5 nA @ 75 V), matched dual-diode topology in SOT323, thermal derating behavior up to +150°C, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

The BAV199W-7 integrates two independent silicon planar epitaxial diodes in a single SOT323 package, sharing no internal connection - each diode operates with identical V_RRM = 85 V, I_F(AV) = 140 mA (dual conduction), and trr = 3.0 μs under standardized 10 mA switching conditions.

Its low-leakage design targets high-impedance nodes: IR remains ≤80 nA even at 75 V and +150°C, and CT is rated at 2 pF at 0 V reverse bias, enabling stable performance in sample-and-hold, sensor interface, and low-power RF detector applications.

Key Specifications

Pinout & Package

Package: SOT323 - 3-pin surface-mount plastic case, 2.10 mm × 1.30 mm × 0.90 mm body, matte tin-plated Alloy 42 leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-leakage diode applications.

Compared with BAV99W-7 and MMBD7000-7-F, the BAV199W-7 delivers superior reverse voltage margin and order-of-magnitude lower leakage - making it the only choice for 48 V-compatible, high-accuracy analog designs requiring AEC-Q101 assurance.

Availability

BAV199W-7 is available at Aetrix Electronics and suitable for high-precision instrumentation, automotive body control modules, and industrial analog I/O interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAV199W-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAV199W-7 belongs to Diodes' precision switching diode product line, engineered specifically for low-leakage, high-reliability signal-path protection in automotive, industrial, and portable instrumentation applications.

FAQ

What is the maximum reverse voltage rating for the BAV199W-7?

The BAV199W-7 has a peak repetitive reverse voltage (V_RRM) of 85 V, verified per DS30462 Rev. 7–2. This rating applies to each diode independently and is guaranteed across the full operating temperature range of −65°C to +150°C with no derating required up to 125°C ambient.

Is the BAV199W-7 suitable for automotive applications?

Yes - the BAV199W-7 is fully qualified to AEC-Q101 standards, including high-temperature operating life (HTOL), temperature cycling (TCT), and human-body-model ESD (≥2 kV). Its SOT323 package and green compound meet automotive PPAP documentation requirements for body control, lighting, and sensor modules.

How does the leakage current behave at elevated temperatures?

At 75 V reverse bias and +150°C junction temperature, the leakage current (I_R) rises to ≤80 nA - still within specification and significantly lower than typical general-purpose diodes (>1 µA). This behavior is confirmed by Figure 3 in the official datasheet and supports use in thermally demanding environments.

Can the BAV199W-7 be used in a common-anode configuration?

No - the internal schematic and top-view marking confirm Pin 2 is the common cathode/anode node (cathode of D1, anode of D2), enabling only common-cathode or series configurations. Common-anode use would require external re-routing and violates the device's defined terminal functionality.