Diodes Incorporated BAV199WQ-7

Overview

BAV199WQ-7 from Diodes Incorporated is a dual surface-mount low-leakage switching diode in SOT323 package, rated for 85 V peak reverse voltage, 140 mA double-diode forward current, and ultra-low 5 nA leakage at 75 V - used in precision analog front-ends and automotive sensor signal conditioning.

For engineers reviewing the BAV199WQ-7 datasheet, BAV199WQ-7 pinout, BAV199WQ-7 application, or BAV199WQ-7 equivalent, key selection criteria include reverse leakage stability over temperature, fast 3.0 µs recovery time, dual-element isolation in compact SOT323, and AEC-Q101 qualification for automotive signal routing and ESD protection circuits.

Technical Context

This dual diode integrates two independent, isolated PN junctions in a single SOT323 package with common cathode configuration confirmed by internal schematic and top-view marking (K52). It operates across –65°C to +150°C with thermal resistance of 625°C/W and supports high-precision biasing where leakage below 80 nA at 150°C is required.

The device delivers stable forward voltage of 0.90 V at 1 mA and 1.25 V at 150 mA, while maintaining total capacitance of 2 pF at 0 V reverse bias - enabling use in RF detector and high-impedance sampling circuits without signal loading.

Key Specifications

Pinout & Package

Package: SOT323 - 3-terminal plastic surface-mount case, 2.15 mm × 2.10 mm × 0.95 mm body height, matte tin-plated alloy 42 leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-leakage diode applications.

Compared with BAV99W-7-F and MMBD1204-7-F, the BAV199WQ-7 uniquely balances AEC-Q101 compliance, 5 nA leakage, and 3.0 µs recovery in one SOT323 package - making it optimal for automotive analog signal chains requiring both reliability and precision.

Availability

BAV199WQ-7 is available at Aetrix Electronics and suitable for automotive sensor interfaces, high-precision instrumentation front-ends, RF detector circuits, and portable medical device power management requiring stable component supply across extended temperature ranges.

Supply support for BAV199WQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAV199WQ belongs to Diodes' automotive-qualified discrete diode product line, engineered specifically for signal integrity preservation in harsh-environment analog sensing and protection circuits.

FAQ

What is the polarity configuration of the BAV199WQ-7?

The BAV199WQ-7 uses a common-cathode dual-diode configuration: Pin 1 is Anode 1, Pin 2 is shared Cathode, and Pin 3 is Anode 2. This is confirmed by the internal schematic and top-view marking "K52" in the official datasheet DS38657 Rev. 2–2.

Is the BAV199WQ-7 suitable for high-frequency applications above 10 MHz?

Yes - with 2 pF total capacitance at 0 V and 3.0 µs reverse recovery time, the BAV199WQ-7 supports envelope detection and signal clamping up to 10 MHz modulation bandwidth, as verified in Figure 4 (capacitance vs. voltage) and electrical characteristics table.

How does the leakage current change at elevated temperature?

Leakage increases to 80 nA at VR = 75 V and TJ = +150°C, per the Electrical Characteristics table. This is 16× higher than the 5 nA value at 25°C, consistent with silicon diode exponential behavior and confirmed in Figure 3 (reverse characteristics curves).

Can the BAV199WQ-7 replace the BAV99 in automotive designs?

No - while both are dual SOT323 diodes, the BAV199WQ-7 is AEC-Q101 qualified and specified for ≤5 nA leakage at 75 V, whereas the BAV99 lacks automotive qualification and exhibits ≥25 nA leakage, making it unsuitable for safety-critical automotive sensor biasing per ISO/TS 16949 requirements.