Taiwan Semiconductor Corporation BAV20W-G RHG

Overview

BAV20W-G RHG from Taiwan Semiconductor is a high-voltage fast-switching silicon switching diode in SOD-123 package, rated for 200 V peak reverse voltage (VRM), 500 mW power dissipation, and 200 mA average rectified output current (IO), with trr < 50 ns and low reverse leakage (IR ≤ 0.1 μA at VR = 200 V), used in high-frequency flyback snubbers and DC-DC converter freewheeling paths.

For engineers reviewing the BAV20W-G RHG datasheet, BAV20W-G RHG pinout, BAV20W-G RHG application, or BAV20W-G RHG equivalent, key selection criteria include verified trr < 50 ns, VRM = 200 V, VF = 1.25 V @ IF = 200 mA, thermal resistance RθJA = 250°C/W, and halogen-free green compound compliance per RoHS.

Technical Context

This diode operates as a unidirectional high-speed switching element with cathode-band polarity marking, optimized for repetitive switching at frequencies up to several MHz. Its SOD-123 package supports surface-mount reflow with guaranteed 260°C/10s soldering tolerance and MIL-STD-202-compliant matte tin plating.

The device exhibits low junction capacitance (CJ = 4 pF @ VR = 0 V, f = 1 MHz) and tight thermal design margin due to its 10.5 ± 0.5 mg mass and specified TJ range of –65°C to +150°C, enabling stable operation in compact power stage layouts where thermal mass and parasitic capacitance must be minimized.

Key Specifications

Pinout & Package

Package: SOD-123 - Bend-lead, surface-mount plastic case with cathode band marking; dimensions: 3.55–3.85 mm (L) × 1.4–1.8 mm (W) × 0.95–1.35 mm (H); weight 10.5 ± 0.5 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-switching diode applications.

Compared with BAV21W-G RHG, BAV20W-G RHG offers optimal voltage-margin trade-off for 24–36 V DC-DC outputs; versus 1N4148W-TB, it delivers robust 200 V blocking and 200 mA IO capability at modest trr penalty, making it suitable for power-stage rather than signal-path roles.

Availability

BAV20W-G RHG is available at Aetrix Electronics and suitable for switch-mode power supply snubbers, DC-DC converter freewheeling paths, and high-frequency signal clipping requiring stable component supply, consistent MSL Level 1 handling, and halogen-free compliance.

Supply support for BAV20W-G RHG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.

The BAV19W-G/BAV20W-G/BAV21W-G series belongs to TSC's Small Signal Product line, engineered specifically for high-speed, high-voltage switching in space-constrained power conversion and signal conditioning applications.

FAQ

What is the maximum peak reverse voltage rating for BAV20W-G RHG?

The BAV20W-G RHG has a maximum peak reverse voltage (VRM) rating of 200 V, verified per Taiwan Semiconductor's D1603 specification sheet. This rating defines the highest transient voltage the diode can block without breakdown during normal operation and is measured under non-repetitive conditions. Designers must ensure system-level voltage spikes remain within this limit, including safety margin for ringing and overshoot.

Is BAV20W-G RHG compatible with lead-free reflow soldering processes?

Yes, BAV20W-G RHG is qualified for lead-free reflow soldering at 260°C for 10 seconds, as explicitly guaranteed in its mechanical data. The device uses matte tin-plated terminals compliant with MIL-STD-202, Method 208, and its SOD-123 package is designed for standard J-STD-020-compliant thermal profiles without delamination or solderability degradation.

What does the "G" suffix in BAV20W-G RHG indicate?

The "G" suffix in BAV20W-G RHG denotes halogen-free green compound packaging material, conforming to IEC 61249-2-21 and JEDEC JS709E standards. It confirms the molding compound contains no bromine, chlorine, or other regulated halogens - a requirement for environmentally regulated end equipment such as industrial automation controllers and medical peripherals.

How does the reverse recovery time of BAV20W-G RHG compare to standard 1N4148 diodes?

BAV20W-G RHG specifies trr < 50 ns under IF = IR = 30 mA, RL = 100 Ω, while standard 1N4148 variants typically achieve trr ≈ 4 ns. Though slower than 1N4148, BAV20W-G RHG delivers significantly higher VRM (200 V vs. 100 V) and IO (200 mA vs. 300 mA average, but with superior surge handling), making it appropriate for power-stage switching where voltage margin outweighs nanosecond-level speed.

What is the junction-to-ambient thermal resistance (RθJA) of BAV20W-G RHG in standard SOD-123 mounting?

The junction-to-ambient thermal resistance (RθJA) of BAV20W-G RHG is 250°C/W, measured on standard FR-4 PCB with minimum copper pad area per datasheet layout guidelines. This value assumes still-air conditions and defines the upper limit of continuous power dissipation (PD = 500 mW) before junction temperature exceeds 150°C. For higher-power use, thermal relief pads or copper pours are required to reduce effective RθJA.