My Inquiry
My Account
Taiwan Semiconductor Corporation BAV20WS-G RRG
,SC-76,SOD-323.jpg)
- Part No.:
- BAV20WS-G RRG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
BAV20WS-G RRG.pdf
- Description:
- DIODE GEN PURP 150V 200MA SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:8,997
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAV20WS-G from Taiwan Semiconductor is a surface-mount fast switching diode in SOD-323 package, rated for 200 mA average forward current, 150 V repetitive peak reverse voltage, and 625 mW power dissipation, with 2.5 ns reverse recovery time and 1.00 V forward voltage at 100 mA - used in high-speed signal routing and DC-DC converter flyback snubbing.
For engineers reviewing the BAV20WS-G datasheet, BAV20WS-G pinout, BAV20WS-G application, or BAV20WS-G equivalent, key selection criteria include reverse recovery time, VF consistency at 100–200 mA, thermal resistance (RθJA = 200°C/W), halogen-free compliance (IEC 61249-2-21), and SOD-323 footprint compatibility in space-constrained PCB layouts.
Technical Context
This diode operates as a unidirectional, low-capacitance (CJ = 4.0 pF at VR = 0 V) silicon PN junction device optimized for high-frequency switching up to several MHz. Its 2.5 ns trr and 1.00 V VF at IF = 100 mA enable efficient transient suppression and fast signal clamping in digital logic interfaces and SMPS feedback paths.
The SOD-323 package provides polarity identification via cathode band, moisture sensitivity level 1 handling, and thermal performance validated across –40°C to +150°C junction temperature range. Derating begins above 25°C ambient per Fig. 4, maintaining 625 mW only at TA ≤ 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IF(AV) | 200 mA - supports continuous signal-level rectification or clamp duty in low-power logic and sensing circuits |
| VRRM | 150 V - withstands transient spikes in 12–48 V industrial control and automotive body electronics |
| trr | 2.5 ns - enables clean edge transitions in >10 MHz clock distribution and pulse shaping networks |
| VF @ 100 mA | 1.00 V - minimizes conduction loss in high-duty-cycle switching nodes of buck converters |
| CJ @ 0 V | 4.0 pF - limits capacitive loading on high-impedance signal lines such as microcontroller GPIO inputs |
| RθJA | 200 °C/W - requires minimal copper area for thermal relief in compact SMT designs without forced airflow |
| Moisture Sensitivity | Level 1 - allows unlimited floor life before reflow; no baking required prior to assembly |
Pinout & Package
SOD-323 small outline plastic package: 2-terminal surface-mount device with cathode indicated by band; dimensions A=1.15–1.40 mm, B=2.30–2.70 mm, D=1.60–1.80 mm; weight 4.36 ± 0.5 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in clamping or rectification path; must be routed with low-inductance trace for fast switching |
| Cathode | Forward current exit / reverse blocking terminal | Marked by visible band; ties to higher-potential rail or signal reference; critical for correct polarity in ESD protection placement |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free green compound | Complies with IEC 61249-2-21 and RoHS 2011/65/EU - eliminates brominated flame retardants for safer end-of-life processing |
| Fast reverse recovery | 2.5 ns trr measured at IF = IR = 30 mA, RL = 100 Ω, Irr = 0.1×IR - reduces switching loss and ringing in high-frequency SMPS |
| Low forward voltage | 1.00 V at 100 mA ensures <100 mW conduction loss in 5 V logic-level clamp applications |
| High conductance | Derived from low dynamic resistance - improves efficiency in low-voltage signal steering and level-shifting circuits |
| SOD-323 footprint | Standardized 1.7 × 1.25 mm land pattern - compatible with automated pick-and-place and reflow profiles for high-yield manufacturing |
Applications
| Signal Clamping in Digital Interfaces | Snubber Diode in DC-DC Converters |
|---|---|
Use Scenario: Protecting microcontroller GPIO pins from voltage overshoot during hot-plug events or bus contention in UART/I²C lines. IC Role / Device Role: Fast-acting bidirectional clamp limiting excursion to VDD + VF and GND − VF. Use Value: 2.5 ns trr prevents metastability; 4.0 pF capacitance avoids signal integrity degradation on 10+ MHz data lines. | Use Scenario: Absorbing leakage inductance energy in synchronous buck converter freewheeling paths. IC Role / Device Role: Low-VF, fast-recovery flyback diode placed across high-side MOSFET or transformer secondary. Use Value: 1.00 V VF at 100 mA reduces conduction loss; SOD-323 size fits tight layout constraints near power inductors. |
| ESD Protection Element | High-Speed Logic Level Translation |
Use Scenario: Discrete ESD shunt on USB 2.0 D+/D− lines where integrated protection lacks sufficient speed or robustness. IC Role / Device Role: Transient voltage suppressor diverting >8 kV HBM pulses to ground before IC input structures fail. Use Value: 150 V VRRM withstands system-level surge tests; halogen-free compound meets IPC-J-STD-020 assembly requirements. | Use Scenario: Shifting 3.3 V logic signals to 5 V domains using passive resistor-diode networks. IC Role / Device Role: Forward-biased voltage drop element establishing precise offset between logic thresholds. Use Value: Tight VF tolerance (1.00 V @ 100 mA) ensures repeatable level shift; low CJ avoids timing skew on multi-bit buses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV21WS-G | Higher VRRM (200 V) and slightly higher VF (1.25 V @ 100 mA); same SOD-323 package and trr (2.5 ns) | Better suited for 24–48 V industrial bus protection where higher standoff is required | Select BAV20WS-G when 150 V rating suffices and lower VF is prioritized for efficiency |
| 1N4148WS | Same SOD-323 package but slower trr (4.0 ns), higher VF (1.25 V @ 100 mA), and lower VRRM (100 V) | Legacy choice for general-purpose switching where speed is non-critical | Choose BAV20WS-G over 1N4148WS when sub-3 ns recovery and 150 V rating are mandatory |
Compared with BAV21WS-G and 1N4148WS, the BAV20WS-G delivers optimal balance of 150 V standoff, 2.5 ns recovery, and 1.00 V forward drop - making it preferred for 12–24 V embedded power rails and high-speed interface clamping where both voltage margin and conduction loss matter.
Availability
BAV20WS-G is available at Aetrix Electronics and suitable for signal clamping, DC-DC snubbing, ESD protection, and logic level translation requiring stable component supply and full halogen-free compliance.
Supply support for BAV20WS-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1993.
The Small Signal Product line includes fast switching diodes like BAV20WS-G designed specifically for high-frequency signal integrity, low-loss power conversion, and environmentally compliant SMT deployment in space-constrained systems.
FAQ
What is the maximum repetitive peak reverse voltage for BAV20WS-G?
The BAV20WS-G has a maximum repetitive peak reverse voltage (VRRM) of 150 V, verified per DS_S0000021 Rev A15. This rating applies under standard test conditions (TA = 25°C, pulse width ≤ 1 μs) and defines the highest reverse voltage the diode can block repeatedly without breakdown. Exceeding this value risks irreversible junction damage, especially at elevated temperatures.
Does BAV20WS-G meet halogen-free requirements?
Yes, BAV20WS-G uses green compound compliant with IEC 61249-2-21 and is RoHS 2011/65/EU certified. The "G" suffix in the part number explicitly denotes halogen-free molding compound. No brominated or chlorinated flame retardants are present, supporting environmentally responsible manufacturing and end-of-life processing per global regulatory standards.
What is the reverse recovery time (trr) of BAV20WS-G and how is it measured?
The BAV20WS-G has a reverse recovery time (trr) of 2.5 ns, measured under the condition: IF = IR = 30 mA, RL = 100 Ω, and Irr = 0.1 × IR (per Note 3 in DS_S0000021). This value reflects the time required for minority carriers to clear after forward conduction ceases, directly impacting switching loss and noise in high-frequency circuits.
Is BAV20WS-G suitable for use in automotive applications?
BAV20WS-G operates across –40°C to +150°C junction temperature and meets RoHS/REACH, but Taiwan Semiconductor does not qualify it to AEC-Q101. It may be used in non-safety-critical automotive subsystems (e.g., infotainment power rails or body control module I/O clamping) subject to customer qualification. For AEC-Q101-compliant alternatives, consult Aetrix's qualified automotive discrete portfolio.
What is the thermal resistance junction-to-ambient (RθJA) for BAV20WS-G?
The BAV20WS-G has a thermal resistance junction-to-ambient (RθJA) of 200°C/W, specified for the SOD-323 package on standard JEDEC test board conditions. This value assumes minimal copper pour; actual board-level RθJA will improve with added thermal vias and copper area. Derating curves (Fig. 4) show power dissipation drops linearly above 25°C ambient.
BAV20WS-G RRG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 150 V
- Capacitance @ Vr, F:
- 5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
- Operating Temperature - Junction:
- -65°C ~ 150°C
BAV20WS-G RRG FAQ
1.How can I place an order for BAV20WS-G RRG through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV20WS-G RRG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV20WS-G RRG reliable?
The price and inventory of BAV20WS-G RRG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV20WS-G RRG is usually 5 days.
3.What payment methods are accepted for BAV20WS-G RRG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV20WS-G RRG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV20WS-G RRG?
BAV20WS-G RRG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV20WS-G RRG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV20WS-G RRG?
For technical support, including BAV20WS-G RRG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV20WS-G RRG requirements.
6.How does Aetrix verify that BAV20WS-G RRG is sourced from the original manufacturer or authorized distributors?
All BAV20WS-G RRG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV20WS-G RRG meets industry standards.
7.What is the process for return or replacement of BAV20WS-G RRG?
All BAV20WS-G RRG units undergo pre-shipment inspection (PSI). If there is an issue with BAV20WS-G RRG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV20WS-G RRG part is unused and in its original packaging.
Return procedure for BAV20WS-G RRG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV20WS-G RRG Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
