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Nexperia USA Inc. BAV23A,215
- Part No.:
- BAV23A,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAV23A,215.pdf
- Description:
- DIODE ARR GP 200V 225MA TO-236AB
- Quantity:
- Payment:
- Shipping:
Inventory:17,780
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Product details
Overview
BAV23A from Nexperia is a dual high-voltage switching diode in SOT23 package, featuring common-anode configuration, 250 V repetitive peak reverse voltage (VRRM), ≤50 ns reverse recovery time (trr), and ≤2 pF capacitance - deployed in high-speed flyback snubbers and HV DC-DC converter clamp circuits.
For engineers reviewing the BAV23A datasheet, BAV23A pinout, BAV23A application, or BAV23A equivalent, this page delivers verified electrical parameters, terminal mapping, thermal derating curves, and validated alternatives for high-voltage switching designs requiring fast recovery and low leakage at 200 V reverse bias.
Technical Context
The BAV23A integrates two independent silicon switching diodes sharing a common anode terminal, enabling compact dual-path clamping or series-connected high-voltage rectification. Its design targets discrete-level transient suppression and fast turn-off in inductive load switching.
It operates with ≤100 nA reverse leakage at VR = 200 V and 25 °C, supports 125 mA continuous forward current per diode, and maintains stable trr ≤ 50 ns under IF = 10 mA / IR = 10 mA test conditions with 100 Ω load and 1 mA measurement threshold.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 250 V - maximum repetitive reverse voltage each diode withstands without breakdown |
| trr | ≤50 ns - ensures minimal switching loss in >100 kHz SMPS topologies |
| Cd | ≤2 pF at VR = 0 V, f = 1 MHz - reduces capacitive coupling in high-dv/dt gate drive isolation |
| IR | ≤100 nA at VR = 200 V, 25 °C - enables reliable hold-off in high-impedance bias networks |
| VF | 1.25 V max at IF = 200 mA - limits conduction loss in pulsed clamp applications |
| Ptot | 250 mW at Tamb ≤ 25 °C on FR4 PCB - defines thermal headroom for surface-mount layout |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, standard footprint per Fig. 8–9 in datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 (cathode of diode 1) | Output node for first diode; connects to switched node in clamp or snubber path |
| 2 | K2 (cathode of diode 2) | Independent output node for second diode; enables dual-rail or redundancy routing |
| 3 | CA (common anode) | Shared input terminal; ties both diodes to positive rail or gate driver return |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 50 ns enables use in 200–500 kHz flyback converters without excessive ringing |
| High-voltage blocking | VRRM = 250 V supports direct interface with 200 V DC bus systems and AC line-derived supplies |
| Low junction capacitance | Cd ≤ 2 pF minimizes EMI coupling in high-frequency gate-drive feedback paths |
| Low leakage current | IR ≤ 100 nA at 200 V preserves accuracy in high-impedance voltage sensing and bias networks |
Applications
| Switch-Mode Power Supply Clamp | High-Voltage Signal Clipping |
|---|---|
Use Scenario: Clamp voltage spikes across MOSFET drains in 100–300 kHz flyback converters operating from 170–200 V DC input. IC Role / Device Role / Timing Role: Dual-diode common-anode configuration provides symmetrical clamping to shared rail while minimizing board area. Use Value: 50 ns trr and 250 V VRRM prevent avalanche stress during fast turn-off; low Cd avoids parasitic resonance with transformer leakage inductance. |
Use Scenario: Limit analog signal excursions to ±200 V in industrial sensor front-ends interfacing with isolated ADCs. IC Role / Device Role / Timing Role: Each cathode independently clips positive transients toward CA rail, enabling bidirectional overvoltage protection. Use Value: 100 nA IR at 200 V ensures negligible loading on high-Z sensor outputs; SOT23 footprint allows placement near connector entry points. |
| DC-DC Converter Snubber | High-Speed Logic-Level Translation |
Use Scenario: Absorb energy from leakage inductance in isolated forward or push-pull DC-DC converters with 200 V primary-side windings. IC Role / Device Role / Timing Role: Common-anode connection simplifies RC snubber integration across transformer secondary or auxiliary winding. Use Value: 250 mW Ptot rating accommodates intermittent surge dissipation; thermal resistance Rth(j-a) = 500 K/W informs heatsinking needs on FR4. |
Use Scenario: Translate TTL/CMOS logic edges to 200 V referenced control signals in solid-state relay drivers or IGBT gate sequencers. IC Role / Device Role / Timing Role: One diode routes rising edge via K1→CA; second diode routes falling edge via K2→CA for bidirectional level shift. Use Value: ≤50 ns trr preserves edge fidelity up to 2 MHz; 2 pF Cd prevents signal distortion in <10 ns rise-time paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-voltage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV23S,215 | VRRM = 200 V (vs. 250 V); identical SOT23 pinout and trr ≤ 50 ns | Not suitable where 200–250 V transient margin is required; lower cost for ≤200 V systems | Select when system peak reverse voltage stays below 200 V and cost sensitivity outweighs margin need |
| MMBD231C-7-F | VRRM = 200 V; trr = 50 ns typical but not guaranteed max; Cd = 2.5 pF | Higher capacitance increases EMI risk in >100 MHz gate-drive paths; no 250 V rating | Prefer only if existing BOM uses Diodes Inc. platform and 200 V rating suffices |
Compared with BAV23S,215 and MMBD231C-7-F, the BAV23A delivers superior 250 V blocking margin and tighter trr guarantee - critical for robustness in unregulated HV bus environments where transient overshoot exceeds 200 V.
Availability
BAV23A is available at Aetrix Electronics and suitable for high-speed switching at high voltage, high-voltage general-purpose switching, and flyback converter clamp circuits requiring stable component supply and traceable sourcing.
Supply support for BAV23A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process optimization and automotive-grade quality systems.
The BAV23A belongs to Nexperia's high-voltage switching diode product line, engineered specifically for fast-recovery, high-peak-voltage applications in power conversion and industrial control where leakage, capacitance, and thermal performance are tightly constrained.
FAQ
What is the maximum continuous forward current per diode in the BAV23A?
The BAV23A supports 125 mA continuous forward current per diode at Tamb ≤ 25 °C on a standard FR4 PCB. Derating applies above 25 °C ambient, with full derating to zero at 150 °C junction temperature per Fig. 5 in the datasheet.
Is the BAV23A suitable for automotive applications?
No. The BAV23A is explicitly marked as non-automotive qualified in its revision history (Table 8). It lacks AEC-Q101 qualification and is not tested to automotive reliability standards; Nexperia offers separate -Q qualified variants for such use cases.
How is the common-anode configuration used in practical circuit design?
The CA terminal connects to the positive reference (e.g., VCC or gate driver return), while K1 and K2 route to separate switched nodes. This enables dual-path clamping, differential transient suppression, or bidirectional level translation without external wiring between anodes.
Does the BAV23A have a specified junction-to-case thermal resistance?
No - the datasheet specifies only junction-to-ambient (Rth(j-a) = 500 K/W) and junction-to-solder-point (Rth(j-sp) = 360 K/W) thermal resistances. No Rth(j-c) value is provided, as the SOT23 package lacks a defined case surface for thermal interface.
BAV23A,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io) (per Diode):
- 225mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 200 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
BAV23A,215 FAQ
1.How can I place an order for BAV23A,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV23A,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV23A,215 reliable?
The price and inventory of BAV23A,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV23A,215 is usually 5 days.
3.What payment methods are accepted for BAV23A,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV23A,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV23A,215?
BAV23A,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV23A,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV23A,215?
For technical support, including BAV23A,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV23A,215 requirements.
6.How does Aetrix verify that BAV23A,215 is sourced from the original manufacturer or authorized distributors?
All BAV23A,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV23A,215 meets industry standards.
7.What is the process for return or replacement of BAV23A,215?
All BAV23A,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAV23A,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV23A,215 part is unused and in its original packaging.
Return procedure for BAV23A,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV23A,215 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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