Diodes Incorporated BAV23C-13-F

Overview

BAV23C-13-F from Diodes Incorporated is a surface-mount dual high-voltage switching diode in SOT23 package, featuring 250 V repetitive peak reverse voltage, 400 mA forward current per element, and 50 ns reverse recovery time. It serves as a fast-switching, low-leakage protection or signal routing device in DC-DC converter flyback clamps, automotive body control modules, and portable battery management circuits.

For engineers reviewing the BAV23C-13-F datasheet, BAV23C-13-F pinout, BAV23C-13-F application, or BAV23C-13-F equivalent, key selection criteria include reverse breakdown voltage margin, thermal resistance (357 °C/W), dual-diode configuration for space-constrained layouts, and AEC-Q101 qualification for automotive-grade reliability validation.

Technical Context

This dual discrete diode integrates two independent silicon PN junctions in a single SOT23-3 package with common cathode configuration (BAV23C variant). Its 250 V V_RRM supports high-side switching in 24 V and 48 V industrial power rails, while 50 ns t_RR enables operation up to ~10 MHz in snubberless flyback topologies.

The device operates across –65 °C to +150 °C, with 100 nA IR at 200 V/25 °C and 100 µA IR at 200 V/150 °C - enabling stable performance in thermally aggressive under-hood environments. Power dissipation is limited to 350 mW at 25 °C ambient, derating linearly above 25 °C per Figure 1.

Key Specifications

Pinout & Package

Package: SOT23-3, plastic molded case, UL 94V-0 rated, 0.008 g weight. Moisture sensitivity level 1 (J-STD-020).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-voltage switching diode applications.

Compared with BAV23C-13-F, the BAV23AQ-13-F adds formal automotive compliance documentation without electrical trade-offs, while the MMBD23C-7-F reduces power handling by 14% but lowers unit cost for non-automotive use - making all three suitable for different tiers of reliability and procurement requirement.

Availability

BAV23C-13-F is available at Aetrix Electronics and suitable for DC-DC converter clamp circuits, automotive body control modules, and portable battery management systems requiring stable component supply across extended production lifecycles.

Supply support for BAV23C-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAV23A/C/S series belongs to Diodes' high-reliability discrete diode product line, engineered specifically for fast-switching, high-voltage protection in automotive and industrial power management systems.

FAQ

What is the pin configuration of BAV23C-13-F?

BAV23C-13-F uses a common-cathode dual-diode configuration in SOT23-3: Pin 1 is Anode 1, Pin 2 is the shared Cathode, and Pin 3 is Anode 2. This layout enables independent anode routing with consolidated cathode return, verified in Diodes' DS30042 Rev. 21 top-view diagram and confirmed via SOT23 mechanical drawings.

Is BAV23C-13-F suitable for automotive applications?

BAV23C-13-F meets AEC-Q101 stress test requirements and is rated for –65 °C to +150 °C operation, but it is designated as the standard-compliance version. For formal automotive qualification, Diodes offers the BAV23AQ-13-F variant with dedicated automotive documentation and PPAP support - both share identical electrical and thermal specs.

How does BAV23C-13-F differ from BAV23A-13-F and BAV23S-13-F?

BAV23C-13-F has a common-cathode dual-diode structure; BAV23A-13-F is common-anode; BAV23S-13-F is series-connected (anode-to-cathode). All share identical V_RRM, t_RR, and package, but circuit topology determines suitability - e.g., BAV23C enables dual-source OR-ing, while BAV23S suits voltage doubling.

What is the maximum continuous forward current per diode?

The maximum continuous forward current per diode is 400 mA at 25 °C ambient, measured with the device mounted on a 1-inch × 1-inch FR-4 PCB with 2 oz copper. At higher temperatures, current must be reduced per the derating curve in Figure 1 - e.g., 200 mA at 100 °C ambient - due to 357 °C/W thermal resistance.