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Nexperia USA Inc. BAV23-QR
- Part No.:
- BAV23-QR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BAV23-QR.pdf
- Description:
- DIODE ARR GP 200V 225MA SOT-143B
- Quantity:
- Payment:
- Shipping:
Inventory:2,996
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Product details
Overview
BAV23-QR from Nexperia is a dual high-voltage switching diode pair in SOT143B package, configured as two independent silicon switching diodes with 250 V repetitive peak reverse voltage (VRRM), ≤50 ns reverse recovery time (trr), and ≤2 pF junction capacitance per diode. It operates across –65 °C to +150 °C and is AEC-Q101 qualified for automotive power supply and signal routing applications requiring fast turn-off under high-voltage bias.
For engineers reviewing the BAV23-QR datasheet, BAV23-QR pinout, BAV23-QR application, or BAV23-QR equivalent, key selection criteria include verified trr ≤ 50 ns at IF = 10 mA/IR = 10 mA, leakage current ≤ 100 nA at VR = 200 V, thermal resistance Rth(j-a) = 500 K/W on FR4 PCB, and dual-diode isolation in a 4-pin surface-mount footprint.
Technical Context
The BAV23-QR integrates two discrete high-speed switching diodes in a single SOT143B package with fully isolated anode–cathode terminals: Pin 1 (K1), Pin 2 (K2), Pin 3 (A2), Pin 4 (A1). Each diode supports independent high-voltage blocking up to 250 V and fast commutation with trr ≤ 50 ns under standardized test conditions (IF = 10 mA, IR = 10 mA, RL = 100 Ω).
Its low 2 pF capacitance and 100 nA reverse leakage at 200 V enable minimal signal distortion in high-frequency clamp, snubber, and level-shift circuits. Thermal performance is specified with Rth(j-sp) = 360 K/W to solder point, supporting reliable operation in automotive ambient environments up to 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 250 V - Maximum repetitive reverse voltage each diode withstands without breakdown; enables use in 200 V DC bus clamping. |
| trr | ≤50 ns - Measured reverse recovery time under IF = 10 mA / IR = 10 mA / RL = 100 Ω; ensures minimal switching loss in >1 MHz flyback snubbers. |
| Cd | ≤2 pF - Junction capacitance at VR = 0 V, f = 1 MHz; reduces capacitive loading in high-impedance signal routing paths. |
| IR | ≤100 nA at VR = 200 V - Low leakage preserves voltage integrity in high-side sensing and precision hold circuits. |
| IFRM | 625 mA - Repetitive peak forward current per diode; supports pulsed operation in transient suppression and charge-pump stages. |
| Ptot | 250 mW at Tamb ≤ 25 °C - Total power dissipation limit on standard FR4 PCB; defines thermal derating envelope for dual-diode loading. |
Pinout & Package
Encapsulated in a compact SOT143B plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch), the BAV23-QR provides four isolated terminals for dual-diode configuration with defined anode/cathode assignment per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 | Cathode of Diode 1 - Reference node for first diode's reverse-biased blocking path; connects to ground or low-impedance return in clamp circuits. |
| 2 | K2 | Cathode of Diode 2 - Independent cathode terminal enabling separate biasing of second diode; allows differential or mirrored switching topologies. |
| 3 | A2 | Anode of Diode 2 - High-side connection point for Diode 2; used in series-connected high-voltage rectification or bidirectional protection. |
| 4 | A1 | Anode of Diode 1 - Primary input node for Diode 1; interfaces directly with switched HV rail or signal source in level-shifting networks. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Qualified for automotive-grade reliability per Stress Test Qualification for Discrete Semiconductors - enables deployment in engine control, ADAS power management, and infotainment power rails. |
| High-speed switching | trr ≤ 50 ns under standardized test conditions - minimizes dead-time losses in synchronous rectifier drivers and high-frequency DC-DC converters. |
| Low junction capacitance | Cd ≤ 2 pF at VR = 0 V - maintains signal edge fidelity in RF detector inputs and high-speed logic-level translation circuits. |
| Thermal robustness | Rth(j-a) = 500 K/W on FR4 PCB - supports continuous operation at 125 °C ambient when derated per Fig. 5, critical for under-hood electronics. |
Applications
| Automotive Power Supply Clamping | High-Voltage Signal Level Shifting |
|---|---|
Use Scenario: Suppressing load-dump transients (ISO 7637-2 Pulse 5a) on 12 V/24 V automotive power rails. IC Role / Device Role / Timing Role: Dual-diode clamping network limits voltage spikes to <250 V while maintaining fast response to sub-µs overvoltage events. Use Value: Prevents damage to downstream PMICs and microcontrollers without adding bulk capacitance or slowing system response. |
Use Scenario: Translating 3.3 V logic signals to interface with 200 V gate drivers in EV traction inverter control boards. IC Role / Device Role / Timing Role: High-voltage level shifter using one diode for pull-up and the other for isolation feedback path. Use Value: Enables precise timing alignment between low-voltage MCU outputs and high-side IGBT gate drive signals with <50 ns skew. |
| Switch-Mode Power Supply Snubbing | Industrial Sensor Signal Conditioning |
Use Scenario: RC-snubber networks across MOSFET drains in 100–200 V industrial SMPS operating at 500 kHz. IC Role / Device Role / Timing Role: Fast-recovery diode absorbs turn-off energy and suppresses ringing by providing low-impedance discharge path. Use Value: Reduces EMI emissions by >15 dBµV in 30–100 MHz band while sustaining >10⁶ cycle lifetime at full-rated voltage. |
Use Scenario: Protecting analog front-end inputs of 24-bit delta-sigma ADCs in high-precision pressure transducers exposed to 150 V ESD events. IC Role / Device Role / Timing Role: Dual-diode TVS-like clamping structure shunts overvoltage before it reaches sensitive input amplifiers. Use Value: Limits input excursion to <1.2 V during 2 kV HBM ESD pulses without degrading 110 dB SNR performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV23W-Q | SOT323 package (smaller footprint, higher Rth(j-a) = 625 K/W); identical electrical specs except IF = 215 mA max. | Better suited for space-constrained PCBs where thermal margin exceeds 25 °C; less suitable for sustained 125 °C ambient. | Select when board area is primary constraint and peak power dissipation remains below 150 mW. |
| BAV21W | VRRM = 200 V (vs. 250 V); trr = 50 ns typical but not guaranteed ≤50 ns; no AEC-Q101 qualification. | Limited to non-automotive industrial or consumer applications with lower voltage margins and relaxed reliability requirements. | Choose only for cost-sensitive designs where 200 V rating suffices and automotive qualification is unnecessary. |
Compared with BAV23W-Q and BAV21W, the BAV23-QR uniquely delivers AEC-Q101 compliance, 250 V VRRM headroom, and validated ≤50 ns trr in the thermally optimized SOT143B package-making it the only option qualified for under-hood automotive switching and high-reliability industrial snubbing.
Availability
BAV23-QR is available at Aetrix Electronics and suitable for automotive power supply clamping, high-voltage signal level shifting, and switch-mode power supply snubbing requiring stable component supply and long-term lifecycle support.
Supply support for BAV23-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.
The BAV23-QR belongs to Nexperia's AEC-Q101-qualified high-voltage switching diode product line, engineered specifically for automotive power management, industrial snubbing, and high-speed signal conditioning where fast recovery and thermal resilience are critical.
FAQ
What is the maximum allowable junction temperature for continuous operation of the BAV23-QR?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in Table 5 of the datasheet. Continuous operation must remain within this limit, with derating applied above Tamb = 25 °C per Fig. 5 - for example, total power dissipation drops to ~125 mW at Tamb = 85 °C on standard FR4 PCB.
Can the BAV23-QR be used in parallel configurations for higher current handling?
No - the BAV23-QR contains two electrically isolated diodes in one package but is not designed for paralleling. Forward voltage mismatch between diodes would cause uneven current sharing, risking thermal runaway. For higher current, use discrete diodes with matched VF or dedicated high-current alternatives like PMEGxxx series.
Is the SOT143B package compatible with standard reflow soldering profiles?
Yes - Nexperia provides a dedicated reflow soldering footprint (Fig. 8) and profile guidance. The package supports JEDEC J-STD-020-compliant lead-free reflow, with peak temperature ≤260 °C and time above liquidus ≤60 seconds, provided solder paste volume and pad geometry match the recommended 0.6 mm × 0.9 mm lands.
Does the BAV23-QR support bidirectional current flow in circuit design?
No - each diode conducts only from anode to cathode. With pins A1/K1 and A2/K2 assigned separately, the device supports two unidirectional paths. Bidirectional conduction requires external circuitry (e.g., back-to-back diode configuration), which is not inherent to the BAV23-QR's internal structure.
BAV23-QR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io) (per Diode):
- 225mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 200 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-143B
BAV23-QR FAQ
1.How can I place an order for BAV23-QR through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV23-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV23-QR reliable?
The price and inventory of BAV23-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV23-QR is usually 5 days.
3.What payment methods are accepted for BAV23-QR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV23-QR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV23-QR?
BAV23-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV23-QR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV23-QR?
For technical support, including BAV23-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV23-QR requirements.
6.How does Aetrix verify that BAV23-QR is sourced from the original manufacturer or authorized distributors?
All BAV23-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV23-QR meets industry standards.
7.What is the process for return or replacement of BAV23-QR?
All BAV23-QR units undergo pre-shipment inspection (PSI). If there is an issue with BAV23-QR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV23-QR part is unused and in its original packaging.
Return procedure for BAV23-QR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV23-QR Tags
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