Nexperia USA Inc. BAV23S-QR

Overview

BAV23S-QR from Nexperia is a dual high-voltage switching diode in SOT23 package, configured as two independent diodes sharing a common terminal (pin 3 = K1/A2). It delivers V_RRM = 250 V, trr ≤ 50 ns, C_d ≤ 2 pF, and I_F(max) = 125 mA per diode - enabling fast, low-capacitance switching in automotive power supply rails and HV signal routing.

For engineers reviewing the BAV23S-QR datasheet, BAV23S-QR pinout, BAV23S-QR application, or BAV23S-QR equivalent, key selection criteria include reverse recovery time under 50 ns at 10 mA, AEC-Q101 qualification for automotive use, dual-diode topology with shared cathode/anode pin, and thermal resistance R_th(j-a) = 500 K/W on FR4 PCB.

Technical Context

The BAV23S-QR integrates two discrete high-voltage switching diodes in a single SOT23-3 package with pin configuration A1–K2–(K1/A2), enabling compact bidirectional clamping or series/anti-parallel switching topologies. Its silicon epitaxial construction supports repetitive peak reverse voltage up to 250 V and junction temperature up to 150 °C.

Designed for automotive-grade reliability, it meets AEC-Q101 stress test requirements and exhibits low leakage (I_R ≤ 100 nA at V_R = 200 V, T_amb = 25 °C) and minimal capacitance (C_d ≤ 2 pF at V_R = 0 V, f = 1 MHz), critical for noise-sensitive HV digital interface protection.

Key Specifications

Pinout & Package

Encapsulated in SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, optimized for reflow soldering on standard FR4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-voltage switching diode applications.

Compared with BAV23S-QR, the BAV23S,115 offers identical performance without automotive qualification, while the MMBD2332LT1G trades 50 V of reverse voltage headroom for lower leakage - making BAV23S-QR optimal for 200–250 V automotive switching where robustness and margin are critical.

Availability

BAV23S-QR is available at Aetrix Electronics and suitable for automotive power management, high-voltage signal conditioning, and DC-DC converter snubbing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAV23S-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including diodes, MOSFETs, bipolar transistors, and ESD protection devices.

The BAV23S-QR belongs to Nexperia's AEC-Q101-qualified high-voltage switching diode product line, engineered specifically for automotive power rail protection, signal clamping, and snubbing in harsh-environment electronic control units.

FAQ

What is the maximum junction temperature for continuous operation?

The BAV23S-QR has a rated maximum junction temperature (T_j) of 150 °C. Continuous operation at this limit requires strict thermal management: derating to zero power above 25 °C ambient on standard FR4 PCB due to R_th(j-a) = 500 K/W, and adherence to the double-diode loaded derating curve in Figure 5.

Is pin 3 truly bidirectional (K1 and A2 simultaneously)?

Yes - pin 3 is internally connected to both the cathode of diode 1 and anode of diode 2, enabling true dual-diode functionality in a 3-pin SOT23. This allows configurations such as common-cathode (pins 1+3 as anodes, pin 2 as shared cathode) or series connection (pin 1 → pin 3 → pin 2), verified in the official pinning diagram and schematic symbol.

How does the 250 V V_RRM relate to the 200 V V_R in quick reference data?

V_RRM = 250 V is the repetitive peak reverse voltage - the maximum transient reverse voltage the device can withstand repeatedly. V_R = 200 V is the DC reverse voltage rating used in leakage current testing (I_R ≤ 100 nA). The 50 V margin ensures safe operation under surge conditions like ISO 7637-2 pulse 5a in automotive environments.

Can BAV23S-QR replace single-diode packages like BAV21 in existing designs?

No - BAV23S-QR is a dual-diode device with shared pin 3 (K1/A2), whereas BAV21 is a single high-voltage diode in DO-35. Direct replacement would require PCB layout revision to accommodate the SOT23-3 footprint and reassign connections to exploit the dual topology; it is not a drop-in substitute but a functional upgrade for space-constrained dual-path applications.