Nexperia USA Inc. BAV70,235

Overview

BAV70,235 from Nexperia is a high-speed switching double diode in SOT23 package, featuring dual anodes with common cathode configuration, 100 V reverse voltage rating, ≤4 ns reverse recovery time, and ≤1.5 pF junction capacitance - used in ESD-protected signal routing and fast logic-level clamping in USB 2.0 transceivers.

For engineers reviewing the BAV70,235 datasheet, BAV70,235 pinout, BAV70,235 application, or BAV70,235 equivalent, key selection criteria include trr ≤4 ns for <10 MHz digital switching, Cd ≤1.5 pF for minimal signal distortion in RF front-end bias networks, and common-cathode topology for dual-rail protection in I²C bus level-shifting circuits.

Technical Context

This dual diode implements two independent silicon planar epitaxial switching diodes sharing a single cathode terminal, enabling compact bidirectional clamping without discrete pairing. Its low Qrr (derived from trr ≤4 ns at IF = IR = 10 mA) supports clean edge transitions in 50–100 MHz clock distribution paths.

The SOT23 package provides thermal resistance Rth(j-a) = 500 K/W on FR4 PCB, limiting continuous forward current per diode to 125 mA at Tamb ≤25 °C. Junction temperature must remain ≤150 °C under pulsed conditions up to IFSM = 0.5 A (tp = 1 s).

Key Specifications

Pinout & Package

Encapsulated in SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, standard footprint per Fig. 8 (reflow) and Fig. 9 (wave soldering).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-diode applications.

Compared with BAV99,215 and MMBD7000LT1G, the BAV70,235 delivers optimal balance of 100 V VR, ≤1.5 pF Cd, and ≤4 ns trr in the smallest SOT23 footprint - making it preferred for space-constrained, high-frequency signal integrity applications where both voltage margin and capacitive loading are critical.

Availability

BAV70,235 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, I²C level-shifting circuits, and RF bias network isolation requiring stable component supply across production volumes from prototype to volume manufacturing.

Supply support for BAV70,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices optimized for efficiency, miniaturization, and robustness in high-volume electronics.

The BAV70 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation in data communication interfaces, ESD protection, and fast-switching power management subsystems.

FAQ

What is the maximum continuous forward current per diode for BAV70,235 at 70 °C ambient?

At Tamb = 70 °C, derated forward current per diode is 85 mA, calculated using the thermal resistance Rth(j-a) = 500 K/W and Tj(max) = 150 °C. This assumes standard FR4 PCB mounting with single-sided copper and tin plating per datasheet condition [2]. No external heatsinking is required below this limit.

Can BAV70,235 be used in automotive applications?

No - BAV70,235 is explicitly non-automotive qualified per Nexperia's revision history (v.9, July 2022). It lacks AEC-Q101 qualification, temperature cycling validation, and automotive-grade traceability. For automotive use, select the BAV70-Q series variants, which undergo extended reliability testing and PPAP documentation.

How does the common-cathode configuration affect PCB layout versus two discrete diodes?

The common-cathode structure reduces net count by one, eliminates cathode trace length mismatch, and cuts occupied area by ~40% compared to two separate SOT23 diodes. It also ensures matched thermal coupling between diodes, critical for balanced clamping in differential signaling like USB or LVDS.

Is the 4 ns trr value guaranteed across temperature and process variation?

Yes - the datasheet specifies trr ≤4 ns (max) under defined test conditions (IF = IR = 10 mA, IR(meas) = 1 mA, RL = 100 Ω, Tamb = 25 °C), representing worst-case across process corners and temperature extremes per IEC 60134 limiting values methodology.