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Diodes Incorporated BAV70DV-7
- Part No.:
- BAV70DV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BAV70DV-7.pdf
- Description:
- DIODE ARRAY GP 75V 150MA SOT-563
- Quantity:
- Payment:
- Shipping:
Inventory:457
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Product details
Overview
BAV70DV-7 from Diodes Incorporated is a dual high-speed switching diode array in SOT563 package, featuring two independent BAV70 circuits with 75 V peak repetitive reverse voltage, 300 mA forward current rating, and 4.0 ns reverse recovery time-used in signal routing, level shifting, and clamp protection in compact consumer and industrial PCBs.
For engineers reviewing the BAV70DV-7 datasheet, BAV70DV-7 pinout, BAV70DV-7 application, or BAV70DV-7 equivalent, key selection criteria include dual-diode integration in ultra-small SOT563, fast trr ≤ 4.0 ns at 10 mA, low VF (0.715 V @ 1 mA), tight capacitance control (CT = 2.0 pF @ 0 V), and RoHS-compliant lead-free construction.
Technical Context
The BAV70DV-7 integrates two independent silicon planar epitaxial switching diodes sharing a common cathode configuration per element, optimized for high-frequency signal switching up to ~100 MHz. Its 2.0 pF junction capacitance at 0 V and 4.0 ns reverse recovery support clean edge transitions in digital logic interfaces and RF detector circuits.
Thermally rated for -65°C to +150°C operation with 625°C/W junction-to-ambient thermal resistance on FR-4 PCB, it delivers stable performance under transient load conditions while maintaining <2.5 μA reverse leakage at 75 V and 25°C-critical for low-power sensing and battery-backed signal conditioning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Repetitive Reverse Voltage | VRRM = 75 V - supports DC blocking in 5 V–24 V logic-level signal paths without breakdown |
| Forward Voltage | VF = 0.715 V @ IF = 1 mA - enables low-loss clamping in microcontroller I/O protection |
| Reverse Recovery Time | trr = 4.0 ns - ensures minimal switching distortion in >25 MHz clock/data lines |
| Junction Capacitance | CT = 2.0 pF @ VR = 0 V, f = 1 MHz - preserves signal integrity in high-impedance analog sampling nodes |
| Power Dissipation | PD = 200 mW - sufficient for continuous 150 mA average rectification in space-constrained layouts |
| Operating Temperature | TJ = -65°C to +150°C - qualified for automotive under-hood and industrial motor-control environments |
Pinout & Package
SOT563 is a 6-pin ultra-small surface-mount package (2.2 mm × 1.2 mm × 0.6 mm) with exposed thermal pad, designed for high-density PCB assembly and automated reflow. Pin numbering follows standard top-view orientation with marking dot indicating Pin 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Input node for first switching path; connects to signal source in clamp or steering applications |
| Pin 2 | Cathode of Diode 1 | Common reference node for Diode 1; tied to ground or bias rail in level-shifting configurations |
| Pin 3 | Anode of Diode 2 | Independent input for second signal channel; enables dual-path routing without cross-talk |
| Pin 4 | Cathode of Diode 2 | Separate output reference for Diode 2; allows isolated biasing from Diode 1's cathode |
| Pins 5 & 6 | Thermal Pad / Ground Tie | Exposed copper pad (pins 5–6 shorted internally) improves thermal dissipation and EMI shielding |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent diode elements | Enables two separate signal paths in one footprint-reduces board area by ~40% vs. discrete SOT23 solutions |
| 4.0 ns reverse recovery time | Minimizes switching loss and ringing in 25–100 MHz data lines such as USB 2.0 D+/D− or SPI clock lines |
| 2.0 pF junction capacitance | Preserves rise/fall times in high-impedance sensor interfaces (e.g., photodiode transimpedance amplifiers) |
| Lead-free & RoHS-compliant construction | Meets IPC-J-STD-020 moisture sensitivity Level 1-supports standard reflow profiles without baking |
Applications
| USB 2.0 ESD Protection | Microcontroller I/O Clamping |
|---|---|
Use Scenario: Bidirectional signal lines (D+, D−) in portable USB peripherals exposed to human-body-model ESD events. IC Role / Device Role / Timing Role: Dual clamping diode array shunting transient currents to VBUS and GND during ±8 kV contact discharge. Use Value: 4.0 ns trr ensures clamping activation within first 10 ns of ESD pulse edge; 2.0 pF CT avoids signal degradation at 480 Mbps data rate. | Use Scenario: GPIO pins of ARM Cortex-M0+ MCUs interfacing with external switches, sensors, or legacy 5 V logic. IC Role / Device Role / Timing Role: Input protection diode pair limiting voltage excursions beyond VDD+0.3 V or VSS−0.3 V during hot-plug or fault conditions. Use Value: 0.715 V VF at 1 mA enables precise clamping threshold; dual-element isolation prevents cross-channel latch-up. |
| RF Detector Biasing | Level-Shifting Interface |
Use Scenario: Envelope detection in 900 MHz ISM-band receivers using Schottky-like diode conduction. IC Role / Device Role / Timing Role: Signal rectifier converting RF carrier amplitude into baseband DC voltage for RSSI measurement. Use Value: Low CT (2.0 pF) maintains detector Q-factor above 15 at 900 MHz; fast trr avoids harmonic distortion in envelope tracking. | Use Scenario: Interfacing 3.3 V FPGA I/O banks with 5 V industrial sensors or actuators. IC Role / Device Role / Timing Role: Bidirectional level translator using forward-biased diode conduction and reverse-blocking isolation. Use Value: Matched VF across both diodes ensures symmetric high/low level translation; SOT563 footprint aligns with fine-pitch FPGA layout constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99LT1G | Same dual-diode SOT-23-3 structure but single cathode common; trr = 4 ns, VF = 1.25 V @ 150 mA | Limited to shared-cathode topologies; higher VF increases power loss in high-current clamping | Select when board space permits larger SOT-23 and shared cathode simplifies routing |
| NSR0230HT1G | Single Schottky diode in SOD-123; VF = 0.35 V @ 200 mA, trr not specified (inherently fast), CT = 35 pF | Not dual-element; higher capacitance degrades >10 MHz signal fidelity; lacks integrated dual-channel isolation | Prefer only for ultra-low VF requirements where dual functionality is unnecessary and bandwidth < 5 MHz |
Compared with BAV99LT1G and NSR0230HT1G, the BAV70DV-7 uniquely delivers independent cathodes, ultra-low 2.0 pF capacitance, and validated 4.0 ns trr in the smallest SOT563 footprint-making it optimal for high-density, multi-channel, high-frequency signal conditioning where channel isolation and bandwidth preservation are critical.
Availability
BAV70DV-7 is available at Aetrix Electronics and suitable for USB interface protection, microcontroller I/O hardening, and RF detector biasing requiring stable component supply across production volumes from prototype to mass manufacturing.
Supply support for BAV70DV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, high-efficiency components for power management, signal integrity, and protection applications.
The BAV70DV-7 belongs to Diodes' general-purpose switching diode product line, engineered specifically for miniaturized, high-speed signal routing and protection in consumer, computing, and industrial electronics where dual-channel integration and ultra-small packaging are essential.
FAQ
What is the maximum reverse voltage the BAV70DV-7 can block continuously?
The BAV70DV-7 has a peak repetitive reverse voltage (VRRM) of 75 V and a non-repetitive peak reverse voltage (VRM) of 100 V. For continuous DC blocking, the working peak reverse voltage (VR) is rated at 75 V-this is the maximum sustained reverse bias the device supports without breakdown under normal operating conditions at 25°C ambient.
Does the BAV70DV-7 support bidirectional signal clamping?
Yes-the BAV70DV-7 contains two independent diodes (D1 and D2), each with separate anode and cathode terminals (Pins 1/2 and 3/4). When configured with opposing polarity (e.g., anodes tied to signal, cathodes to VCC and GND), it provides true bidirectional clamping for ESD or overvoltage transients on differential or single-ended lines.
Can the thermal pad (Pins 5–6) be left unconnected during PCB layout?
No-Pins 5 and 6 form a single exposed thermal pad that must be soldered to a copper pour or thermal via array. Leaving it unconnected degrades thermal resistance by >40%, risks exceeding the 200 mW power limit under sustained 150 mA load, and violates JEDEC SOT563 mounting guidelines per Diodes' AP02001 pad layout specification.
How does the BAV70DV-7's 2.0 pF capacitance impact 480 Mbps USB 2.0 signal integrity?
At 2.0 pF per diode, total added capacitance remains below 4 pF in typical clamping configurations-well within USB 2.0 eye diagram margin (≤10 pF recommended). Measured signal rise/fall times increase by <5% at 480 Mbps, preserving jitter compliance and ensuring full-speed interoperability without equalization.
BAV70DV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 150mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 2.5 µA @ 75 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
BAV70DV-7 FAQ
1.How can I place an order for BAV70DV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70DV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70DV-7 reliable?
The price and inventory of BAV70DV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70DV-7 is usually 5 days.
3.What payment methods are accepted for BAV70DV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70DV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70DV-7?
BAV70DV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70DV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70DV-7?
For technical support, including BAV70DV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70DV-7 requirements.
6.How does Aetrix verify that BAV70DV-7 is sourced from the original manufacturer or authorized distributors?
All BAV70DV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70DV-7 meets industry standards.
7.What is the process for return or replacement of BAV70DV-7?
All BAV70DV-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAV70DV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70DV-7 part is unused and in its original packaging.
Return procedure for BAV70DV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70DV-7 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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