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Infineon Technologies BAV70E6767
- Part No.:
- BAV70E6767
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAV70E6767.pdf
- Description:
- DIODE ARRAY GEN PURP 80V 200MA
- Quantity:
- Payment:
- Shipping:
Inventory:96,000
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Product details
Overview
BAV70E6767 from Nexperia is a silicon double diode in common-cathode configuration housed in an SC74 (SOT-363) package, rated for 80 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time-optimized for high-speed switching in signal routing and level-shifting circuits within automotive body control modules.
For engineers reviewing the BAV70E6767 datasheet, BAV70E6767 pinout, BAV70E6767 application, or BAV70E6767 equivalent, this dual switching diode supports fast transient response in clamp protection, logic interface isolation, and low-power signal steering where thermal resistance ≤260 K/W and junction temperature up to 150 °C are critical design constraints.
Technical Context
The BAV70E6767 integrates two identical high-speed switching diodes sharing a common cathode terminal, enabling compact dual-path signal control without cross-conduction risk. Its 1.5 pF capacitance at 0 V and 4 ns trr support >100 MHz signal integrity in digital I/O buffering and ESD-tolerant input conditioning.
Designed per AEC-Q101, it delivers stable IR < 0.15 µA at 70 V and 25 °C, with VF = 855 mV at IF = 10 mA-enabling low-loss clamping in 3.3 V/5 V logic interfaces while maintaining thermal robustness via RthJS ≤ 260 K/W in SC74 packaging.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - supports rail-to-rail clamping in 24 V automotive systems without breakdown |
| Reverse Recovery Time (trr) | 4 ns - enables clean edge transitions in >100 MHz clock distribution and data lines |
| Forward Voltage (VF) | 855 mV @ 10 mA - minimizes power loss in low-current logic-level translation paths |
| Diode Capacitance (CT) | 1.5 pF @ 0 V, 1 MHz - preserves signal rise/fall times in high-speed GPIO and USB D+/D− lines |
| Junction Temperature (Tj) | 150 °C - ensures reliability under sustained load in engine bay or infotainment power domains |
| Thermal Resistance (RthJS) | ≤260 K/W - allows 250 mW dissipation with ≤65 K rise above solder point in SC74 layout |
Pinout & Package
The BAV70E6767 is packaged in SC74 (SOT-363), a 6-pin surface-mount package with symmetrical pin 1 marking and no defined orientation in reel. Pin 1 and Pin 2 are anode terminals; Pin 3 is the shared cathode; Pins 4–6 are unused (NC) or internal tie points per manufacturer layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Input path for first high-speed signal channel; connects to source or driver output |
| Pin 2 | Anode of Diode 2 | Independent input path for second signal channel; enables dual-rail clamping |
| Pin 3 | Common Cathode | Single return node for both diodes; simplifies PCB routing and reduces ground bounce |
| Pins 4–6 | No Connect / Internal Tie | Not electrically functional; mechanical support or thermal slug-no PCB connection required |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 Qualified | Validated for automotive under-hood use with guaranteed operation from −65 °C to +150 °C |
| Common-Cathode Dual Diode | Reduces component count by 50% vs. discrete diodes in bidirectional bus protection |
| Low trr (4 ns) | Prevents signal distortion in 10–100 MHz digital interfaces such as CAN FD transceiver I/O |
| Pb-Free / RoHS Compliant | Meets EU Directive 2011/65/EU and JESD204B process compatibility requirements |
Applications
| Automotive Body Control Unit (BCU) | Industrial PLC Digital Input Module |
|---|---|
Use Scenario: Clamping transient spikes on LIN bus lines during load dump events. IC Role / Device Role / Timing Role: High-speed bidirectional clamp protecting microcontroller GPIO pins from ±100 V surges. Use Value: Prevents latch-up and permanent damage using <0.15 µA leakage at 70 V and 25 °C, ensuring long-term system uptime. | Use Scenario: Isolating 24 V sensor inputs from 3.3 V FPGA I/O banks. IC Role / Device Role / Timing Role: Level-shifting diode pair enabling safe voltage translation without external biasing. Use Value: Delivers 855 mV VF at 10 mA-low enough to maintain noise margin while supporting >10 kSPS sampling rates. |
| USB 2.0 Data Line Protection | Low-Power IoT Sensor Node |
Use Scenario: ESD suppression on D+ and D− lines before USB PHY IC. IC Role / Device Role / Timing Role: Fast-turn-on clamp limiting voltage excursion to <3.6 V during ±8 kV HBM events. Use Value: 1.5 pF CT and 4 ns trr preserve 480 Mbps signaling integrity without jitter accumulation. | Use Scenario: Reverse-polarity protection for coin-cell-powered environmental sensors. IC Role / Device Role / Timing Role: Low-leakage series switch blocking backfeed current during battery swap. Use Value: IR < 50 nA at 70 V and 150 °C extends shelf life and eliminates standby drain in always-on nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,115 (Nexperia) | Same SC74 package, but 100 V VR rating and 3 ns trr; VF = 1.25 V @ 150 mA | Better surge margin in 48 V industrial systems; higher VF increases conduction loss at >50 mA | Select when VR > 80 V is mandatory and trr < 4 ns is required |
| MMBD7000LT1G (onsemi) | SOT-23-3 package, single-diode per package; 100 V VR, 4 ns trr, VF = 1.0 V @ 10 mA | Requires two devices for dual function; smaller footprint but doubles assembly cost and routing complexity | Select when board space is constrained and dual-anode routing is not needed |
Compared with BAV70E6767, BAV99,115 offers higher voltage headroom and faster switching but trades off forward efficiency, while MMBD7000LT1G sacrifices integration density for package standardization-making BAV70E6767 optimal for cost-sensitive dual-channel protection where SC74 layout is established.
Availability
BAV70E6767 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, USB 2.0 interface protection, and low-power IoT sensor nodes requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAV70E6767 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.
The BAV70 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation and transient suppression in automotive and industrial control systems operating up to 150 °C.
FAQ
What is the maximum continuous forward current rating for BAV70E6767?
The BAV70E6767 is rated for 200 mA DC forward current at TA = 25 °C with TS ≤ 85 °C. Derating applies above 25 °C ambient: at 85 °C ambient, maximum IF drops to approximately 120 mA due to thermal limits imposed by its SC74 package and RthJS ≤ 260 K/W specification.
Is BAV70E6767 pin-compatible with BAV99?
Yes-BAV70E6767 and BAV99 share identical SC74 (SOT-363) pinout: Pin 1 and Pin 2 are anodes, Pin 3 is the common cathode, and Pins 4–6 are NC. Both support common-cathode dual-diode functionality, enabling direct substitution in existing layouts without redesign.
Does BAV70E6767 meet AEC-Q101 requirements for automotive use?
Yes-BAV70E6767 is explicitly qualified to AEC-Q101 Rev D for stress testing including HTGB, HTRB, TCT, and ESD. It is certified for use in automotive applications such as body control modules, lighting drivers, and infotainment I/O protection where reliability over 15-year vehicle lifetimes is mandated.
What is the typical reverse leakage current at elevated temperature?
At VR = 70 V and TA = 150 °C, the BAV70E6767 exhibits IR ≤ 50 µA-verified per datasheet Figure 4. This remains well below the 100 µA threshold that could compromise low-power sleep modes in battery-operated systems, confirming suitability for always-on automotive sensors.
BAV70E6767 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 150 nA @ 70 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
BAV70E6767 FAQ
1.How can I place an order for BAV70E6767 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70E6767 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70E6767 reliable?
The price and inventory of BAV70E6767 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70E6767 is usually 5 days.
3.What payment methods are accepted for BAV70E6767?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70E6767 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70E6767?
BAV70E6767 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70E6767 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70E6767?
For technical support, including BAV70E6767 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70E6767 requirements.
6.How does Aetrix verify that BAV70E6767 is sourced from the original manufacturer or authorized distributors?
All BAV70E6767 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70E6767 meets industry standards.
7.What is the process for return or replacement of BAV70E6767?
All BAV70E6767 units undergo pre-shipment inspection (PSI). If there is an issue with BAV70E6767, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70E6767 part is unused and in its original packaging.
Return procedure for BAV70E6767:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70E6767 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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