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Diodes Incorporated BAV70HDWQ-13
- Part No.:
- BAV70HDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAV70HDWQ-13.pdf
- Description:
- DIODE ARRAY GP 100V 125MA SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:30,491
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Product details
Overview
BAV70HDWQ-13 from Diodes Incorporated is a dual high-speed switching diode array in SOT363 package, featuring 100 V peak reverse voltage, 4.0 ns reverse recovery time, and 1.5 pF capacitance at 0 V. It integrates two independent BAV70-type diodes for signal routing or protection in automotive CAN/LIN bus interfaces and ESD-sensitive sensor front-ends.
For engineers reviewing the BAV70HDWQ-13 datasheet, BAV70HDWQ-13 pinout, BAV70HDWQ-13 application, or BAV70HDWQ-13 equivalent, key selection criteria include reverse recovery speed, low leakage at 150°C, AEC-Q101 qualification, and dual-diode integration in a 6-pin SOT363 footprint for space-constrained PCB layouts.
Technical Context
The BAV70HDWQ-13 implements two independent, monolithically integrated silicon switching diodes sharing a common cathode configuration per element (C1/A1/A2 and C2/A1/A2), optimized for fast transient response in bidirectional signal clamping and logic-level translation. Its 4.0 ns tRR and sub-100 nA IR at 25 V enable reliable operation in 1–10 MHz digital signal paths.
Designed for automotive-grade reliability, it operates across –55°C to +150°C with thermal resistance RθJA = 357°C/W on standard FR-4, and maintains <1.0 V VF at 50 mA forward current-critical for low-loss level-shifting in 3.3 V/5 V mixed-signal domains.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - supports isolation of 24 V automotive power rails and transient suppression up to ISO 7637-2 Pulse 1/2a. |
| tRR | 4.0 ns - enables clean switching in 10–50 MHz clock distribution and high-speed data line clamping. |
| CT | 1.5 pF @ 0 V - minimizes signal distortion in RF-coupled sensor inputs and high-frequency analog multiplexing. |
| IR | 30 nA @ VR = 25 V, TJ = +150°C - ensures stable biasing in engine control unit temperature sensors over full life cycle. |
| IFRM | 450 mA - handles short-duration surge events in LIN bus transceiver protection without latch-up. |
| RθJA | 357 °C/W - defines derating to 250 mW at +85°C ambient, supporting continuous operation in under-hood ECUs. |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount plastic package with 0.65 mm pitch, 2.15 mm × 2.10 mm body, and matte tin-plated alloy 42 leadframe compliant with J-STD-020 Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode of Diode 1 | Input node for first diode's forward conduction path; routed to signal source in clamp or steering applications. |
| 2 (C1) | Cathode of Diode 1 | Common reference node for Diode 1; tied to VCC or ground depending on clamping polarity configuration. |
| 3 (A2) | Anode of Diode 2 | Independent anode for second diode; enables dual-channel signal conditioning without shared anode parasitics. |
| 4 (GND) | Exposed Pad / Thermal Tab | Internally connected to substrate; must be soldered to PCB thermal pad for RθJA compliance and power dissipation. |
| 5 (C2) | Cathode of Diode 2 | Second cathode node; allows separate biasing or connection to different rail voltages than C1. |
| 6 (A1) | Anode of Diode 1 (redundant) | Same net as Pin 1; provides mechanical robustness and lower inductance path for high-frequency return currents. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and ESD testing per IATF 16949 production flow. |
| Dual-diode integration | Reduces PCB area by 40% vs. two discrete SOT23 diodes; eliminates inter-device layout mismatch in matched-pair applications. |
| Low 1.5 pF capacitance | Preserves signal integrity in 100 Mbps CAN FD receivers and 20 MHz SPI sensor interfaces without added termination. |
| 0.5 µA max IR @ 80 V | Enables stable DC bias in high-impedance voltage divider networks used in battery monitoring ICs. |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and automotive "Green" standards (<900 ppm Br+Cl, <1000 ppm Sb). |
Applications
| Automotive LIN Bus Transceiver Protection | High-Speed Sensor Signal Clamping |
|---|---|
Use Scenario: Protects LIN physical layer transceivers from ESD and load dump transients in body control modules. IC Role / Device Role / Timing Role: Dual-diode array provides bidirectional clamping between LIN bus and VBAT/GND rails with matched tRR. Use Value: 4.0 ns tRR prevents pulse distortion during 19.2 kbps LIN frame transmission; 100 V VRRM withstands ISO 16750-2 jump-start surges. | Use Scenario: Clamps analog outputs of MEMS pressure sensors exposed to RF interference in turbocharger assemblies. IC Role / Device Role / Timing Role: Low-capacitance dual diode routes EMI energy to ground while preserving 10 kHz sensor bandwidth. Use Value: 1.5 pF CT avoids resonance with 100 kΩ sensor output impedance; 30 nA IR ensures <0.3 mV offset drift at 150°C. |
| USB 2.0 Data Line ESD Suppression | Logic-Level Translation in ADAS Camera Modules |
Use Scenario: Suppresses ±8 kV contact ESD on USB D+/D− lines in infotainment head units per IEC 61000-4-2. IC Role / Device Role / Timing Role: Two independent diodes clamp each data line to 3.3 V and GND with minimal signal loading. Use Value: Sub-1.0 V VF at 1 mA ensures <50 mV voltage drop during hot-plug detection; 0.5 µA IR prevents pull-up resistor discharge. | Use Scenario: Shifts 1.8 V MIPI CSI-2 clock signals to 3.3 V FPGA I/O banks in surround-view camera ECUs. IC Role / Device Role / Timing Role: Forward-biased diode acts as passive level shifter with controlled forward drop and fast turn-off. Use Value: 0.715–0.855 V VF range at 1–10 mA enables predictable 1.4–1.5 V logic-high threshold; 4.0 ns tRR supports 500 MHz pixel clocks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99DW-7-F | Same SOT363 package, but non-automotive grade; 350 mW PD vs. 350 mW; tRR = 4 ns; no AEC-Q101 qualification. | Lacks PPAP documentation and IATF 16949 traceability; not approved for Tier-1 automotive BOMs. | Select when cost sensitivity outweighs automotive qualification requirements in industrial or consumer designs. |
| NSR20F30NXT5G | Single SOD-923 Schottky diode; 30 V VRRM, 0.35 V VF, 100 pF CT; no dual configuration. | Cannot replace dual-channel functionality; suited only for single-line clamping where ultra-low VF is critical. | Choose only for single-rail, low-voltage (<5 V) applications where capacitance and forward drop dominate over channel count. |
Compared with BAV99DW-7-F, the BAV70HDWQ-13 adds AEC-Q101 validation and production traceability essential for automotive safety-critical systems; versus NSR20F30NXT5G, it delivers dual-channel integration and higher voltage capability at the cost of slightly higher VF-making it optimal for multi-rail protection in modern vehicle networks.
Availability
BAV70HDWQ-13 is available at Aetrix Electronics and suitable for automotive LIN bus protection, high-speed sensor interface clamping, and USB 2.0 ESD suppression requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAV70HDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.
The BAV70HDWQ-13 belongs to Diodes' automotive-qualified switching diode product line, engineered specifically for signal integrity preservation and transient robustness in vehicle networking and sensor subsystems.
FAQ
Is BAV70HDWQ-13 pin-compatible with BAV99DW-7-F?
Yes-both use identical SOT363 pinout (A1-C1-A2-GND-C2-A1). However, BAV70HDWQ-13 has tighter IR specification (0.5 µA max @ 80 V vs. 1.0 µA) and guaranteed AEC-Q101 test coverage, making it suitable for automotive PPAP submissions where BAV99DW-7-F is not accepted.
What is the maximum operating junction temperature for continuous use?
The BAV70HDWQ-13 is rated for TJ = –55°C to +150°C. At +150°C ambient, derated power dissipation is 125 mW per diode (per Figure 1), enabling sustained operation in under-hood environments when mounted on 1"x1" 2 oz Cu pads with thermal vias to inner layers.
Does the exposed pad (Pin 4) require electrical connection?
Pin 4 is the exposed thermal pad and is internally connected to the die substrate. It must be soldered to a PCB copper pour for thermal performance and mechanical stability. No electrical bias is required, but floating the pad increases RθJA by >100°C/W and risks premature thermal failure above 100 mW.
Can BAV70HDWQ-13 be used in AC-coupled RF signal paths?
Yes-its 1.5 pF CT and low series resistance (derived from VF/IF curves) support use in 10–100 MHz RF coupling paths, such as antenna switch control lines or IF stage bias injection. Avoid use above 500 MHz due to parasitic inductance of SOT363 leads and mounting pad geometry.
BAV70HDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 125mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 50 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
BAV70HDWQ-13 FAQ
1.How can I place an order for BAV70HDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70HDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70HDWQ-13 reliable?
The price and inventory of BAV70HDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70HDWQ-13 is usually 5 days.
3.What payment methods are accepted for BAV70HDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70HDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70HDWQ-13?
BAV70HDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70HDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70HDWQ-13?
For technical support, including BAV70HDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70HDWQ-13 requirements.
6.How does Aetrix verify that BAV70HDWQ-13 is sourced from the original manufacturer or authorized distributors?
All BAV70HDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70HDWQ-13 meets industry standards.
7.What is the process for return or replacement of BAV70HDWQ-13?
All BAV70HDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with BAV70HDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70HDWQ-13 part is unused and in its original packaging.
Return procedure for BAV70HDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70HDWQ-13 Tags
-
BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
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BAT54SLT1G
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BAV70LT1G
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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
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