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Diodes Incorporated BAV70LP-7
- Part No.:
- BAV70LP-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- 3-UFDFN
- Datasheet:
-
BAV70LP-7.pdf
- Description:
- DIODE ARRAY GP 75V X1-DFN1006-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,107
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Product details
Overview
BAV70LP-7 from Diodes Incorporated is a dual high-speed switching diode in an ultra-small leadless DFN package (X1-DFN1006-3), designed for signal routing and clamping in space-constrained digital and RF circuits. It features 75 V peak repetitive reverse voltage, 300 mA forward current rating, 4.0 ns reverse recovery time, 2.0 pF capacitance at 0 V, and low forward voltage drop (0.715 V @ 1 mA).
For engineers reviewing the BAV70LP-7 datasheet, BAV70LP-7 pinout, BAV70LP-7 application, or BAV70LP-7 equivalent, key selection criteria include fast switching performance in high-frequency signal paths, low capacitance for minimal signal distortion, thermal robustness in compact layouts, and RoHS-compliant lead-free construction for modern PCB assembly.
Technical Context
The BAV70LP-7 integrates two independent silicon switching diodes in a single 1.0 mm × 0.6 mm DFN package with shared cathode connection (common-cathode configuration). Its 4.0 ns reverse recovery time enables reliable operation up to ~100 MHz signal frequencies, while the 2.0 pF junction capacitance supports low-load impedance matching in RF detector and antenna switch applications.
Thermal resistance of 312 °C/W (junction-to-ambient, FR-4 board) and -65 °C to +150 °C operating range allow stable performance in consumer portables and industrial control modules where ambient temperature fluctuation and board-level power density are critical constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Repetitive Reverse Voltage | 75 V - supports DC blocking and transient clamping in 5 V–24 V logic and interface lines |
| Reverse Recovery Time | 4.0 ns - enables clean signal edge preservation in >50 MHz digital clock distribution |
| Junction Capacitance | 2.0 pF @ 0 V - minimizes loading on high-impedance RF nodes and crystal oscillator feedback paths |
| Forward Voltage | 0.715 V @ 1 mA - reduces conduction loss in low-current bias and level-shift networks |
| Power Dissipation | 400 mW - sufficient for continuous operation in dual-diode configurations without forced cooling |
| Operating Temperature | -65 °C to +150 °C - qualified for automotive under-hood and industrial motor drive environments |
Pinout & Package
Package: X1-DFN1006-3 - ultra-compact 1.0 mm × 0.6 mm × 0.5 mm leadless plastic package with NiPdAu-plated copper terminals and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Anode A) | Anode of Diode A | Signal input node for first diode path; requires external series resistor for current limiting in clamp applications |
| Pin 2 (Cathode) | Common Cathode | Shared cathode terminal for both diodes; connects to reference rail (e.g., VCC or ground) for bidirectional clamping |
| Pin 3 (Anode B) | Anode of Diode B | Signal input node for second independent diode path; enables dual-channel signal steering or redundancy |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.0 mm × 0.6 mm - saves >70% board area vs. SOT-23 dual diodes, enabling dense RF front-end layouts |
| Low junction capacitance | 2.0 pF - preserves signal integrity in 50 Ω transmission lines and crystal load networks |
| Fast reverse recovery | 4.0 ns - prevents pulse distortion in high-speed data line protection and sampling circuits |
| Lead-free & halogen-free | RoHS 2 compliant, <900 ppm Br/Cl, <1000 ppm Sb - meets IPC-1752A material declaration requirements |
Applications
| USB 2.0 ESD Protection | RF Antenna Switching |
|---|---|
Use Scenario: Clamping transient voltages on USB D+/D− lines during hot-plug events and electrostatic discharge. IC Role / Device Role / Timing Role: Dual common-cathode diode provides bidirectional low-capacitance path to VBUS or ground for ±15 kV HBM ESD suppression. Use Value: 2.0 pF capacitance avoids signal integrity degradation at 480 Mbps data rates; 75 V VRWM ensures safe operation across USB power rails. | Use Scenario: Steering RF signals between main and diversity antennas in LTE/Wi-Fi front-end modules. IC Role / Device Role / Timing Role: High-speed switching diode pair acts as passive SPDT switch controlled by DC bias on anodes. Use Value: 4.0 ns tRR enables sub-100 ns switching latency; low VF minimizes insertion loss in 2.4 GHz/5 GHz bands. |
| Crystal Oscillator Load Matching | Digital Logic Level Translation |
Use Scenario: Providing precise capacitive load tuning and DC bias isolation for parallel-resonant quartz crystals in MCU clock circuits. IC Role / Device Role / Timing Role: Low-capacitance diode shunts stray currents while maintaining crystal motional impedance stability. Use Value: 2.0 pF CT adds predictable parasitic load without requiring layout compensation; 0.715 V VF ensures minimal DC offset on crystal pins. | Use Scenario: Translating logic levels between 3.3 V microcontrollers and 5 V peripherals using simple diode-resistor networks. IC Role / Device Role / Timing Role: Dual-anode configuration allows independent translation of two I/O signals with shared cathode reference. Use Value: Matched VF characteristics (<±50 mV variation) ensure consistent threshold alignment across both channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99LT1G | Higher VF (1.25 V @ 150 mA), larger SOT-23-3 package (3.0 × 1.4 mm), 3.0 pF CT | Less suitable for RF and ultra-dense layouts due to size and capacitance | Select when higher surge current tolerance (IFSM = 4 A) outweighs board space and RF performance needs |
| MMBD7000LT1G | Same X1-DFN1006-3 package, but 100 V VRWM, 3.0 ns tRR, 1.5 pF CT | Better for 24 V industrial I/O protection and higher-frequency RF detectors | Prefer for designs requiring tighter timing margin or extended reverse voltage headroom |
Compared with BAV99LT1G and MMBD7000LT1G, the BAV70LP-7 offers optimal balance of ultra-small footprint, low capacitance, and thermal efficiency for portable and high-density RF applications-whereas alternatives trade size for ruggedness or speed for voltage rating.
Availability
BAV70LP-7 is available at Aetrix Electronics and suitable for USB interface protection, RF antenna switching, crystal oscillator load matching, and digital level translation requiring stable component supply and consistent parametric performance across production lots.
Supply support for BAV70LP-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, energy-efficient components for consumer, computing, industrial, and automotive markets.
The BAV70LP-7 belongs to Diodes' high-speed switching diode product line, engineered specifically for miniaturized signal integrity applications including ESD protection, RF switching, and precision bias networks in space-constrained systems.
FAQ
What is the pin configuration of the BAV70LP-7?
The BAV70LP-7 uses a 3-pin X1-DFN1006-3 package with Pin 1 as Anode A, Pin 2 as Common Cathode, and Pin 3 as Anode B. The cathode bar marking on the top surface aligns with Pin 2. This common-cathode arrangement supports bidirectional clamping and dual-signal routing without external interconnects.
Does the BAV70LP-7 support reflow soldering per JEDEC standards?
Yes, the BAV70LP-7 is qualified for lead-free reflow soldering per JEDEC J-STD-020, with moisture sensitivity level 1. Its NiPdAu-plated terminals meet MIL-STD-202 Method 208 solderability requirements, and the package withstands peak temperatures up to 260 °C for ≤60 seconds during standard Pb-free reflow profiles.
How does the BAV70LP-7 perform at elevated temperatures?
At +150 °C, the BAV70LP-7 maintains IR ≤ 50 µA at VR = 75 V and VF increases by ~120 mV versus 25 °C values. Its 312 °C/W thermal resistance and -65 °C to +150 °C rating enable reliable operation in automotive engine-control and industrial motor-drive environments without derating below 400 mW until ambient exceeds 85 °C.
Can the BAV70LP-7 be used in AC signal coupling applications?
No-the BAV70LP-7 is a unidirectional switching diode optimized for DC-biased clamping and signal steering. Its asymmetric IV curve and lack of symmetrical breakdown make it unsuitable for true AC coupling. For AC path isolation, a back-to-back diode configuration or dedicated AC-coupling capacitor is required.
BAV70LP-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 150mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 2.5 µA @ 75 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
BAV70LP-7 FAQ
1.How can I place an order for BAV70LP-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70LP-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70LP-7 reliable?
The price and inventory of BAV70LP-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70LP-7 is usually 5 days.
3.What payment methods are accepted for BAV70LP-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70LP-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70LP-7?
BAV70LP-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70LP-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70LP-7?
For technical support, including BAV70LP-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70LP-7 requirements.
6.How does Aetrix verify that BAV70LP-7 is sourced from the original manufacturer or authorized distributors?
All BAV70LP-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70LP-7 meets industry standards.
7.What is the process for return or replacement of BAV70LP-7?
All BAV70LP-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAV70LP-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70LP-7 part is unused and in its original packaging.
Return procedure for BAV70LP-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70LP-7 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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