Diodes Incorporated BAV70Q-7-F

Overview

BAV70Q-7-F from Diodes Incorporated is a dual high-speed switching diode in SOT23 package, rated for 75 V peak repetitive reverse voltage and 300 mA forward continuous current, with 4.0 ns reverse recovery time and 2.0 pF junction capacitance at 0 V - used in signal routing, level shifting, and protection circuits in automotive infotainment and body control modules.

For engineers reviewing the BAV70Q-7-F datasheet, BAV70Q-7-F pinout, BAV70Q-7-F application, or BAV70Q-7-F equivalent, key selection criteria include AEC-Q101 qualification, fast trr performance under 10 mA switching conditions, low VF at 10 mA (≤0.855 V), thermal resistance of 357 °C/W, and compatibility with automated SMT assembly on FR-4 PCBs.

Technical Context

The BAV70Q-7-F integrates two independent silicon switching diodes in a single SOT23-3 package with common cathode configuration, enabling compact dual-path signal clamping or steering. Its 4.0 ns trr and low CT support high-frequency operation up to ~100 MHz in RF detector and sample-and-hold circuits.

Designed for automotive-grade reliability, it features IATF 16949 manufacturing, PPAP capability, and operates across –55 °C to +150 °C. The device uses matte tin-plated alloy 42 leadframe and green molding compound compliant with RoHS 3 and halogen-free standards.

Key Specifications

Pinout & Package

Package: SOT23-3, surface-mount, molded plastic (UL 94V-0), 0.008 g weight, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-speed switching diode applications.

Compared with BAV99-7-F and NSVBAS16WT1G, the BAV70Q-7-F uniquely combines AEC-Q101 qualification, 75 V reverse rating, and validated thermal performance in automotive-relevant mounting conditions - making it the only option qualified for safety-critical vehicle subsystems requiring change-controlled sourcing.

Availability

BAV70Q-7-F is available at Aetrix Electronics and suitable for automotive body control modules, USB 2.0 interface protection, industrial sensor signal conditioning, and RF sampling circuits requiring stable component supply and long-term lifecycle assurance.

Supply support for BAV70Q-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAV70Q series belongs to Diodes' automotive-qualified discrete portfolio, engineered specifically for robust signal switching and transient protection in harsh-environment vehicle electronics.

FAQ

Is BAV70Q-7-F pin-compatible with BAV70-7-F?

Yes - both share identical SOT23-3 pinout (Anode1–Cathode–Anode2) and mechanical dimensions. The "Q" suffix denotes AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing, while electrical specs remain unchanged per DS12006 Rev. 25.

What is the maximum allowable power dissipation at +100°C ambient?

Based on the derating curve in DS12006, power dissipation must be reduced linearly from 350 mW at +25°C. At +100°C, allowable PD is 175 mW - calculated using RθJA = 357 °C/W and ΔT = 75°C, confirming safe operation within thermal limits on standard FR-4 layouts.

Does BAV70Q-7-F support reflow soldering per J-STD-020?

Yes - its moisture sensitivity level is rated Class 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/85% RH and subjected to standard Pb-free reflow profiles (peak 260°C) without baking or special handling.

Can BAV70Q-7-F replace BAT54S in a common-cathode application?

Yes - both are SOT23-3 dual common-cathode Schottky-like switching diodes. However, BAV70Q-7-F has higher VRRM (75 V vs. 30 V), slower trr (4.0 ns vs. 5 ns), and lower VF at high current, making it preferable for 24 V systems but less optimal for ultra-low-voltage (<3 V) energy harvesting interfaces.