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Nexperia USA Inc. BAV70QB-QZ
- Part No.:
- BAV70QB-QZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
BAV70QB-QZ.pdf
- Description:
- DIODE ARRAY GP 100V DFN1110D-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,452
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Product details
Overview
BAV70QB-Q from Nexperia is a dual common cathode high-speed switching diode in DFN1110D-3 (SOT8015) package, rated for 100 V reverse voltage, 350 mA forward current per diode, and 4 ns reverse recovery time. It serves as a compact, AEC-Q101-qualified discrete switching element in automotive signal routing and power rail clamping circuits.
For engineers reviewing the BAV70QB-Q datasheet, BAV70QB-Q pinout, BAV70QB-Q application, or BAV70QB-Q equivalent, this page delivers verified electrical parameters, thermal derating curves, AOI-compatible packaging details, and automotive-grade reliability validation - all critical for high-reliability PCB layout and qualification planning.
Technical Context
This dual-diode configuration shares a single cathode terminal (Pin 3), enabling compact bidirectional clamping or independent high-speed switching paths with matched trr ≤ 4 ns and Cd ≤ 1.5 pF at 1 MHz. Its ultra-thin 0.48 mm body height and side-wettable flanks support automated optical inspection and reflow soldering on dense automotive PCBs.
The device operates across −55 °C to +150 °C junction temperature, with Rth(j-a) = 285 K/W on standard FR4 and Rth(j-sp) = 40 K/W to cathode solder point. Thermal performance is validated under double-diode loading (200 mA total) and single-diode derating (350 mA at Tamb ≤ 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports 24 V and 48 V automotive bus clamping without breakdown |
| Forward Current (IF) | 350 mA per diode - sufficient for logic-level signal steering and low-power load switching |
| Reverse Recovery Time (trr) | 4 ns - enables >100 MHz switching in pulse shaping and data line protection |
| Diode Capacitance (Cd) | 1.5 pF at 0 V - minimizes signal distortion in RF-coupled or high-frequency timing paths |
| Leakage Current (IR) | 0.5 µA at 80 V - ensures low standby power loss in always-on vehicle modules |
| Junction Temperature (Tj) | 150 °C max - qualified for under-hood environments including engine control units |
| Package | DFN1110D-3 (SOT8015) - 1.1 mm × 1.0 mm × 0.48 mm, side-wettable flanks for solder joint inspection |
Pinout & Package
Encapsulated in the ultra-small DFN1110D-3 (SOT8015) leadless plastic package with visible side pads for AOI and reflow compatibility. Package dimensions: 1.1 mm × 1.0 mm × 0.48 mm, 0.65 mm pitch, 0.5 mm max profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input path for first high-speed switching leg; connects to signal source or supply rail |
| 2 | Anode (Diode 2) | Independent input path for second switching leg; enables dual-rail or redundant path design |
| 3 | Common Cathode | Shared return node; simplifies PCB routing and reduces thermal resistance via large copper pad |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use per stress test standard - eliminates need for additional qualification testing |
| Side-wettable flanks | Enables automated optical inspection of solder joints - improves manufacturing yield in SMT lines |
| Low thermal resistance (Rth(j-sp) = 40 K/W) | Direct thermal path from junction to cathode solder point - supports sustained 200 mA double-diode operation |
| 0.5 µA IR at 80 V | Minimizes quiescent current leakage in battery-backed systems - extends sleep-mode battery life |
| 1.5 pF capacitance at 0 V | Preserves signal edge integrity in CAN FD and LIN bus termination networks |
Applications
| Automotive Body Control Module | USB 2.0 ESD Protection Interface |
|---|---|
Use Scenario: Bidirectional signal clamping on LIN bus lines exposed to load dump transients. IC Role / Device Role / Timing Role: Discrete transient voltage suppressor placed between microcontroller GPIO and connector pins. Use Value: 4 ns trr prevents signal overshoot during fast bus arbitration; common cathode simplifies PCB layout near MCU. |
Use Scenario: High-speed data line protection against ±8 kV contact ESD per IEC 61000-4-2. IC Role / Device Role / Timing Role: Low-capacitance shunt diode pair connected to D+ and D− lines with shared ground reference. Use Value: 1.5 pF capacitance avoids USB 2.0 eye diagram degradation; AEC-Q101 rating supports infotainment system integration. |
| Engine Control Unit Input Conditioning | ADAS Camera Power Rail Clamp |
Use Scenario: Reverse polarity and inductive kickback protection on sensor input lines (e.g., crankshaft position). IC Role / Device Role / Timing Role: Dual-path front-end clamp feeding into analog front-end amplifier inputs. Use Value: 100 V VR withstands 12 V system load dump spikes; matched diodes ensure symmetrical clamping thresholds. |
Use Scenario: Overvoltage clamping on 5 V camera module power rail subjected to hot-swap transients. IC Role / Device Role / Timing Role: Low-leakage shunt diode tied between rail and chassis ground to divert surge energy. Use Value: 0.5 µA IR at 80 V prevents measurable rail droop during idle; 0.48 mm height fits tight camera module stack-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W-Q | Same DFN1110D-3 package, but common anode configuration; trr = 4 ns, VR = 70 V | Requires reversed PCB layout for cathode-referenced clamping; lower VR limits use in 48 V systems | Select when circuit topology requires common-anode switching or lower-cost sourcing is prioritized |
| MBR0520L | Schottky diode pair in SOD-523; VF = 240 mV @ 100 mA, VR = 20 V, no AEC-Q101 qualification | Lower forward drop benefits efficiency, but 20 V VR excludes 12 V/24 V bus protection | Prefer only for low-voltage DC-DC output rectification where speed and leakage are secondary to VF |
Compared with BAV99W-Q and MBR0520L, the BAV70QB-Q uniquely combines 100 V VR, AEC-Q101 qualification, and common-cathode topology - making it the only option validated for dual-path clamping in automotive 12 V/24 V signal conditioning without layout redesign or reliability compromise.
Availability
BAV70QB-Q is available at Aetrix Electronics and suitable for automotive body control modules, ADAS camera power management, and USB 2.0 interface protection requiring stable component supply and full traceability.
Supply support for BAV70QB-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
The BAV70QB-Q belongs to Nexperia's AEC-Q101-qualified high-speed switching diode product line, engineered specifically for robust signal integrity and thermal resilience in automotive electronic control units and infotainment systems.
FAQ
What is the maximum continuous forward current rating per diode?
The BAV70QB-Q is rated for 350 mA continuous forward current per diode when mounted on a standard FR4 PCB with single-sided copper and tin plating at Tamb ≤ 25 °C. Derating applies above 25 °C ambient, reaching zero at 150 °C per the published curve in Figure 1.
Is the common cathode pin electrically and thermally optimized for PCB layout?
Yes - Pin 3 (common cathode) is designed as the primary thermal and electrical return path. Its large copper exposure and Rth(j-sp) = 40 K/W to the solder point enable efficient heat extraction, and its shared function reduces net count and routing congestion in dual-switch configurations.
How does the 4 ns reverse recovery time impact high-frequency signal integrity?
A 4 ns trr ensures minimal minority-carrier storage delay, allowing clean switching up to ~100 MHz in pulse applications. This prevents tail currents that distort fast digital edges or cause cross-talk in adjacent traces - critical for LIN, SENT, and other automotive serial interfaces.
Can BAV70QB-Q be used in place of single-diode packages like BAV70 in existing designs?
No - the BAV70QB-Q integrates two diodes sharing one cathode in a 3-pin DFN package, whereas the BAV70 is a single-diode SOT23 device. Direct substitution would require PCB layout revision to accommodate the different pinout, footprint, and dual-diode functionality.
BAV70QB-QZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 350mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN1110D-3
BAV70QB-QZ FAQ
1.How can I place an order for BAV70QB-QZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70QB-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70QB-QZ reliable?
The price and inventory of BAV70QB-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70QB-QZ is usually 5 days.
3.What payment methods are accepted for BAV70QB-QZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70QB-QZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70QB-QZ?
BAV70QB-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70QB-QZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70QB-QZ?
For technical support, including BAV70QB-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70QB-QZ requirements.
6.How does Aetrix verify that BAV70QB-QZ is sourced from the original manufacturer or authorized distributors?
All BAV70QB-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70QB-QZ meets industry standards.
7.What is the process for return or replacement of BAV70QB-QZ?
All BAV70QB-QZ units undergo pre-shipment inspection (PSI). If there is an issue with BAV70QB-QZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70QB-QZ part is unused and in its original packaging.
Return procedure for BAV70QB-QZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70QB-QZ Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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