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Nexperia USA Inc. BAV70QBZ
- Part No.:
- BAV70QBZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
BAV70QBZ.pdf
- Description:
- DIODE ARRAY GP 100V DFN1110D-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,412
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Product details
Overview
BAV70QB from Nexperia is a dual common cathode high-speed switching diode in a DFN1110D-3 (SOT8015) package, rated for 100 V reverse voltage, 350 mA forward current per diode, and 4 ns reverse recovery time. It serves as a compact, low-capacitance (1.5 pF) signal path switch in high-frequency digital logic interfaces and clamping circuits.
For engineers reviewing the BAV70QB datasheet, BAV70QB pinout, BAV70QB application, or BAV70QB equivalent, this part is selected for space-constrained PCBs requiring fast edge handling, low leakage (<0.5 µA at 80 V), AOI-compatible side-wettable flanks, and thermal resistance of 170 K/W to solder point.
Technical Context
The BAV70QB integrates two independent silicon switching diodes sharing a single cathode terminal, enabling compact dual-channel clamping or steering without inter-diode coupling. Its ultra-thin 0.48 mm body height and 0.65 mm pitch support fine-pitch routing on dense digital control boards.
Designed for operation up to 150 °C junction temperature, it delivers stable trr ≤ 4 ns under IF = 10 mA / IR = 10 mA test conditions with 100 Ω load, and maintains VF ≤ 855 mV at 10 mA and 25 °C - critical for low-voltage logic-level translation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports rail-to-rail signal clamping in 24 V industrial I/O and 48 V telecom line interface circuits. |
| Reverse Recovery Time (trr) | 4 ns - enables reliable operation in >100 MHz clock distribution and data strobe conditioning paths. |
| Diode Capacitance (Cd) | 1.5 pF at 0 V - minimizes signal distortion and crosstalk in high-speed serial link termination networks. |
| Forward Voltage (VF) | 855 mV at 10 mA - ensures low power loss and minimal voltage drop in active-low enable paths and level-shifting diodes. |
| Reverse Leakage (IR) | 0.5 µA at 80 V and 25 °C - preserves signal integrity in high-impedance sample-and-hold and analog multiplexer front-ends. |
| Thermal Resistance (Rth(j-sp)) | 170 K/W - allows direct thermal coupling to copper pour via cathode pad, supporting continuous 200 mA double-diode operation at 70 °C ambient. |
Pinout & Package
Encapsulated in the DFN1110D-3 (SOT8015) package - 1.1 mm × 1.0 mm × 0.48 mm body, 0.65 mm pitch, side-wettable flanks for automated optical inspection and reflow process control.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first high-speed switching path; connects to source of transient or logic signal requiring clamping. |
| 2 | Anode (Diode 2) | Independent input node for second switching path; enables dual-rail protection or differential signal steering. |
| 3 | Common Cathode | Shared return path tied to reference plane; provides low-inductance thermal and electrical connection to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 4 ns ensures clean transitions in 100+ MHz clock buffers and pulse-width modulated control signals. |
| Low capacitance | Cd ≤ 1.5 pF prevents loading of RF-sensitive nodes such as antenna switch control lines and crystal oscillator feedback paths. |
| Ultra-small footprint | DFN1110D-3 package occupies 1.1 mm² area - ideal for wearables, IoT sensor nodes, and miniaturized power management modules. |
| AOI-compatible side pads | Visible and solderable side-wettable flanks enable 100% automated optical inspection of solder joint quality without X-ray. |
| Low profile height | 0.48 mm max height avoids interference with stacked connectors, shields, or adjacent tall components in ultra-thin assemblies. |
Applications
| Industrial Digital I/O Protection | USB 2.0 Data Line Clamping |
|---|---|
|
Use Scenario: Protecting PLC input modules against ESD and inductive kickback from solenoid drivers. IC Role / Device Role / Timing Role: Dual common-cathode diode provides bidirectional clamping to VCC and GND rails using shared cathode for compact layout. Use Value: 4 ns trr ensures no timing skew between channels; 100 V VR rating covers 24 V system transients per IEC 61000-4-4 Level 4. |
Use Scenario: ESD suppression on D+ and D− lines of embedded USB host controllers. IC Role / Device Role / Timing Role: Two independent anodes clamp each data line to ground while sharing cathode for minimized trace length and parasitic inductance. Use Value: 1.5 pF capacitance avoids signal integrity degradation at 480 Mbps; side-wettable flanks ensure solder joint reliability in high-volume SMT assembly. |
| High-Speed Logic Level Translation | RF Signal Path Steering |
|
Use Scenario: Bidirectional voltage translation between 3.3 V microcontroller GPIOs and 5 V peripheral buses. IC Role / Device Role / Timing Role: Forward-biased diode drops ~0.85 V to shift logic thresholds; common cathode simplifies bias network design. Use Value: VF ≤ 855 mV at 10 mA guarantees predictable threshold offset; low IR preserves high-Z state during tri-state operation. |
Use Scenario: Antenna diversity switching in Bluetooth LE and Zigbee transceivers. IC Role / Device Role / Timing Role: Diode pair steers RF signal between primary and secondary antennas using DC bias control on anodes. Use Value: 1.5 pF Cd minimizes insertion loss below 2.4 GHz; 100 V VR withstands RF peak voltages during transmit bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W | Same dual common cathode topology but in SOT323 package (2.1 mm × 1.25 mm); trr = 4 ns, Cd = 2 pF, VR = 70 V. | Larger footprint and 30 V lower VR limit restrict use in 24 V industrial systems with high-energy transients. | Select when board space allows larger package and 70 V VR suffices; avoid where 100 V margin or AOI capability is required. |
| PMEG3010CEH | Schottky dual diode (common cathode), VF ≈ 350 mV, trr not specified (Schottky inherently soft recovery), VR = 30 V. | Lower VF reduces conduction loss but 30 V VR and lack of defined trr make it unsuitable for high-voltage clamping or precise timing paths. | Prefer only for low-voltage (<5 V), high-efficiency rectification; not a functional substitute for BAV70QB's 100 V/4 ns performance envelope. |
Compared with BAV99W and PMEG3010CEH, the BAV70QB uniquely combines 100 V VR, 4 ns trr, 1.5 pF Cd, and AOI-ready DFN1110D-3 packaging - making it the only option among the three qualified for compact, high-reliability 24–48 V digital interface protection with verified nanosecond timing behavior.
Availability
BAV70QB is available at Aetrix Electronics and suitable for industrial digital I/O protection, USB 2.0 clamping, and high-speed logic level translation requiring stable component supply across extended production lifecycles.
Supply support for BAV70QB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-performance, energy-efficient logic, discrete, and MOSFET devices for automotive, industrial, and consumer markets.
The BAV70QB belongs to Nexperia's high-speed switching diode product line, engineered specifically for space-constrained, high-frequency signal integrity applications demanding sub-5 ns recovery and AOI-process compatibility.
FAQ
What is the maximum continuous forward current per diode for BAV70QB?
The BAV70QB supports 350 mA continuous forward current per diode when mounted on an FR4 PCB with single-sided copper and standard footprint, as specified in Table 1. Derating applies above 25 °C ambient - at 70 °C, maximum per-diode current drops to approximately 200 mA per Figure 1.
Does BAV70QB have side-wettable flanks, and why does that matter?
Yes, the DFN1110D-3 package features side-wettable flanks, confirmed in Section 6 and Figure 11. This enables automated optical inspection (AOI) of solder joints without X-ray, improving manufacturing yield and field reliability for high-volume SMT production.
Can BAV70QB be used in place of a single discrete diode like 1N4148?
No - the BAV70QB is a dual common cathode device with fixed internal topology. Replacing a single 1N4148 requires using only one anode and the shared cathode, but layout must account for unused anode floating or tied appropriately; its 4 ns trr and 1.5 pF Cd differ from 1N4148's typical 4 ns trr and 4 pF Cd.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for BAV70QB?
Rth(j-sp) is 170 K/W, measured with a 1 cm² mounting pad for the cathode on FR4 PCB (Table 6). This value reflects direct thermal conduction through the cathode pad to the board, enabling higher sustained current in thermally constrained designs than junction-to-ambient metrics alone suggest.
BAV70QBZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 350mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN1110D-3
BAV70QBZ FAQ
1.How can I place an order for BAV70QBZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70QBZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70QBZ reliable?
The price and inventory of BAV70QBZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70QBZ is usually 5 days.
3.What payment methods are accepted for BAV70QBZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70QBZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70QBZ?
BAV70QBZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70QBZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70QBZ?
For technical support, including BAV70QBZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70QBZ requirements.
6.How does Aetrix verify that BAV70QBZ is sourced from the original manufacturer or authorized distributors?
All BAV70QBZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70QBZ meets industry standards.
7.What is the process for return or replacement of BAV70QBZ?
All BAV70QBZ units undergo pre-shipment inspection (PSI). If there is an issue with BAV70QBZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70QBZ part is unused and in its original packaging.
Return procedure for BAV70QBZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70QBZ Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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