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Nexperia USA Inc. BAV70S,115
- Part No.:
- BAV70S,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAV70S,115.pdf
- Description:
- DIODE ARRAY GP 100V 250MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:106,036
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Product details
Overview
BAV70S from Nexperia is a high-speed switching double diode in SOT363-3 (TSSOP6) package, configured as two independent anodes sharing a common cathode per pair - total of four diodes in dual-common-cathode arrangement. It delivers trr ≤ 4 ns reverse recovery time, Cd ≤ 1.5 pF capacitance, and VR = 100 V, enabling use in RF detector clamping and high-frequency signal routing in telecom front-end modules.
For engineers reviewing the BAV70S datasheet, BAV70S pinout, BAV70S application, or BAV70S equivalent, this page provides verified pin functions, real-world switching performance metrics, thermal resistance (Rth(j-sp) = 255 K/W), and validated alternatives for high-speed discrete diode selection in space-constrained SMD designs.
Technical Context
The BAV70S integrates four silicon epitaxial planar diodes in a single TSSOP6 package with dual common-cathode topology: pins 1 & 2 are anodes of diode pair 1 (cathodes tied at pin 6), pins 4 & 5 are anodes of diode pair 2 (cathodes tied at pin 3). This configuration supports independent or paralleled switching paths without cross-coupling.
Its 4 ns trr is measured under standardized IF = 10 mA / IR = 10 mA / IR(meas) = 1 mA / RL = 100 Ω conditions, and low 1.5 pF capacitance at 0 V bias enables minimal signal distortion up to UHF frequencies. Junction temperature rating extends to 150 °C, supporting operation in thermally dense PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports input protection and level-shifting in 48 V industrial bus interfaces |
| Reverse Recovery Time (trr) | 4 ns - enables clean switching at >100 MHz clock rates in sample-and-hold or mixer circuits |
| Diode Capacitance (Cd) | 1.5 pF at 0 V - minimizes loading on 50 Ω RF traces in antenna switch modules |
| Forward Voltage (VF) | 855 mV at 10 mA - ensures low conduction loss in logic-level clamping applications |
| Reverse Current (IR) | 0.5 µA at 80 V, 25 °C - maintains signal integrity in high-impedance sensor bias networks |
| Junction-to-Solder Point Rth | 255 K/W - defines thermal path efficiency for FR4 PCBs with standard copper footprint |
Pinout & Package
Package: SOT363-3 (TSSOP6), 6-pin surface-mount plastic package with 0.65 mm lead pitch and 2.2 mm × 1.35 mm body size.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first high-speed switching path; connects to signal source before common cathode |
| 2 | Anode (Diode 2) | Independent anode for second diode in same cathode pair; enables dual-input/single-output clamp |
| 3 | Common Cathode (Diodes 3 & 4) | Return path shared by third and fourth diodes; electrically isolated from pin 6 |
| 4 | Anode (Diode 3) | Signal input for second cathode group; used in differential or redundant switching topologies |
| 5 | Anode (Diode 4) | Second anode tied to pin 3 cathode; allows mirrored functionality to pins 1–2/6 pair |
| 6 | Common Cathode (Diodes 1 & 2) | Ground/reference node for first diode pair; enables bidirectional clamping when paired with external resistors |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 4 ns enables use in >100 MHz pulse shaping and RF envelope detection |
| Low junction capacitance | Cd ≤ 1.5 pF preserves signal rise time in 50 Ω transmission line interfaces |
| Dual common-cathode topology | Two independent cathode groups (pins 3 and 6) allow separate grounding or biasing schemes |
| Thermal robustness | Rth(j-sp) = 255 K/W supports continuous 100 mA per device on standard FR4 PCBs |
Applications
| RF Signal Clamping | Logic-Level Translation |
|---|---|
|
Use Scenario: Protecting ADC inputs in wideband receiver front-ends from overvoltage transients. IC Role / Device Role / Timing Role: Fast clamping diode limiting signal swing to ±0.7 V while preserving nanosecond-scale edge fidelity. Use Value: 4 ns trr prevents transient-induced sampling aperture error; 1.5 pF capacitance avoids resonant peaking with 50 Ω source impedance. |
Use Scenario: Level-shifting 3.3 V GPIO signals to interface with 5 V legacy peripherals. IC Role / Device Role / Timing Role: Passive voltage translation using forward-biased diode drop (≈0.85 V) between rail domains. Use Value: Low VF variation (±30 mV from 1–10 mA) ensures consistent offset; dual-anode structure supports multi-signal translation in one footprint. |
| High-Frequency Detector | Redundant Power OR-ing |
|
Use Scenario: Envelope detection in 900 MHz ISM-band transceivers for RSSI feedback loops. IC Role / Device Role / Timing Role: Half-wave rectifier converting RF carrier amplitude into baseband DC voltage. Use Value: 1.5 pF capacitance minimizes RF shunting loss; 100 V VR rating accommodates peak envelope voltages up to 70 V. |
Use Scenario: OR-ing two 3.3 V power rails in fault-tolerant embedded controllers. IC Role / Device Role / Timing Role: Low-loss forward path with reverse isolation between supplies during hot-swap events. Use Value: 0.5 µA IR at 80 V ensures <1 µW standby leakage per diode; dual-cathode layout simplifies PCB routing for dual-rail redundancy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,115 | Same SOT363-3 package, but dual-series diode configuration (anode–cathode–anode); trr = 4 ns, Cd = 2 pF | Optimized for series-connected switching (e.g., cascode buffers), not parallel anode clamping | Select when needing back-to-back diode orientation rather than dual-common-cathode topology |
| MMBD7000LT1G | SOT-23-3 package; single dual-diode (common cathode only); trr = 4 ns, Cd = 2 pF, VR = 70 V | Limited to two-diode operation; lower VR restricts use in 48 V systems or high-voltage transient suppression | Choose for cost-sensitive, lower-voltage applications where board space permits larger SOT-23 footprint |
Compared with BAV99,115 and MMBD7000LT1G, the BAV70S uniquely supports four independent switching paths via dual common-cathode groups - critical for compact RF front-end integration where pin count and layout density constrain discrete solutions.
Availability
BAV70S is available at Aetrix Electronics and suitable for RF detector clamping, logic-level translation, high-frequency envelope detection, and redundant power OR-ing requiring stable component supply across production lifecycles.
Supply support for BAV70S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
The BAV70S belongs to Nexperia's high-speed switching diode product line, engineered specifically for RF and digital signal integrity applications demanding sub-5 ns recovery, ultra-low capacitance, and space-efficient dual-diode integration.
FAQ
What is the maximum continuous forward current per diode in the BAV70S?
The BAV70S supports 250 mA per diode at Ts = 60 °C, with a total device limit of 100 mA when all four diodes operate simultaneously under thermal constraints. Derating applies above 60 °C ambient, following the 255 K/W junction-to-solder-point thermal resistance curve.
Can pins 3 and 6 be connected together in a circuit?
No - pins 3 and 6 are physically isolated common cathodes for separate diode pairs (3 for diodes 3/4, 6 for diodes 1/2). Connecting them violates internal die isolation and may cause unpredictable leakage or thermal imbalance; they must be routed independently per application requirements.
Is the BAV70S suitable for automotive applications?
No - the BAV70S is not AEC-Q200 qualified and lacks automotive-grade qualification documentation. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use in safety-critical or vehicle-mounted systems requires formal validation beyond datasheet specifications.
How does the 4 ns trr value impact performance in 2.4 GHz Wi-Fi front-ends?
At 2.4 GHz, the 4 ns trr corresponds to ~0.96° phase error per switching cycle - negligible for envelope detection or DC restoration. However, it ensures minimal stored charge injection during fast transitions, preventing baseline wander in direct-conversion receiver I/Q paths.
BAV70S,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAV70S,115 FAQ
1.How can I place an order for BAV70S,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70S,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70S,115 reliable?
The price and inventory of BAV70S,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70S,115 is usually 5 days.
3.What payment methods are accepted for BAV70S,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70S,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70S,115?
BAV70S,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70S,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70S,115?
For technical support, including BAV70S,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70S,115 requirements.
6.How does Aetrix verify that BAV70S,115 is sourced from the original manufacturer or authorized distributors?
All BAV70S,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70S,115 meets industry standards.
7.What is the process for return or replacement of BAV70S,115?
All BAV70S,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAV70S,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70S,115 part is unused and in its original packaging.
Return procedure for BAV70S,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70S,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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