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Nexperia USA Inc. BAV70S,135
- Part No.:
- BAV70S,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAV70S,135.pdf
- Description:
- DIODE ARRAY GP 100V 250MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:18,633
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Product details
Overview
BAV70S from Nexperia is a high-speed switching double diode in SOT363-3 (TSSOP6) package, featuring 4 ns reverse recovery time, ≤1.5 pF capacitance, and 100 V reverse voltage rating. It integrates two independent diodes with shared cathodes (K1/K2 for D1/D2; K3/K4 for D3/D4), enabling compact dual-channel clamping or steering in signal routing paths of USB data lines, ESD protection circuits, and logic-level translators.
For engineers reviewing the BAV70S datasheet, BAV70S pinout, BAV70S application, or BAV70S equivalent, key selection criteria include verified trr ≤ 4 ns at IF = 10 mA, common-cathode dual-diode topology, SOT363-3 thermal resistance of 255 K/W, and compatibility with reflow soldering per IPC-J-STD-020.
Technical Context
The BAV70S implements a monolithic dual-diode array with two electrically isolated anode-cathode pairs sharing cathode terminals per pair (pins 1&6 for D1, pins 2&6 for D2, pins 4&3 for D3, pins 5&3 for D4), supporting independent or paralleled switching paths. Its epitaxial planar construction enables fast carrier recombination.
Designed for low-capacitance signal integrity preservation, it delivers Cd ≤ 1.5 pF at 0 V and maintains IR ≤ 0.5 µA at VR = 80 V and 25 °C - critical for high-frequency sampling and RF detector bias networks where leakage-induced offset must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Recovery Time (trr) | 4 ns max at IF = 10 mA, IR = 10 mA - ensures minimal switching distortion in >100 MHz digital signal routing |
| Diode Capacitance (Cd) | 1.5 pF max at 0 V, 1 MHz - preserves signal edge fidelity in high-speed data lines (e.g., USB 2.0) |
| Reverse Voltage (VR) | 100 V max - supports transient suppression up to IEC 61000-4-5 Level 3 (1 kV surge) |
| Forward Voltage (VF) | 855 mV typ at IF = 10 mA - enables low-loss biasing in active termination networks |
| Reverse Current (IR) | 0.5 µA max at VR = 80 V, 25 °C - minimizes standby power loss in always-on sensor interfaces |
| Thermal Resistance (Rth(j-sp)) | 255 K/W - defines junction-to-solder-point temperature rise under 100 mA continuous operation on FR4 PCB |
Pinout & Package
Package: TSSOP6 (SOT363-3), 2.2 mm × 1.35 mm × 0.95 mm body, 0.65 mm lead pitch, plastic surface-mounted device with exposed pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first diode path; connects to signal source requiring clamping or steering |
| 2 | Anode (Diode 2) | Independent input for second diode; enables dual-rail signal conditioning without cross-talk |
| 3 | Common Cathode (D3 & D4) | Shared return path for third and fourth diodes; reduces PCB trace count in multi-path protection |
| 4 | Anode (Diode 3) | Third signal channel anode; used in redundant protection or differential pair clamping |
| 5 | Anode (Diode 4) | Fourth independent anode; supports quad-directional ESD shunting in multi-lane interfaces |
| 6 | Common Cathode (D1 & D2) | Shared cathode for first two diodes; simplifies grounding in dual-line TVS configurations |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 4 ns enables clean edge transmission in 100+ Mbps serial links without pulse rounding |
| Low junction capacitance | Cd ≤ 1.5 pF avoids signal attenuation above 500 MHz in RF front-end bias networks |
| Low leakage current | IR ≤ 0.5 µA at 80 V prevents DC offset drift in precision analog sample-and-hold circuits |
| Compact dual-diode integration | SOT363-3 footprint replaces two discrete SOT23 diodes, saving ≥30% board area in space-constrained modules |
Applications
| USB 2.0 Data Line Protection | LVDS Receiver Clamping |
|---|---|
Use Scenario: Protecting D+ and D− lines against ESD events and voltage transients in portable USB peripherals. IC Role / Device Role / Timing Role: Dual-diode clamp limiting signal swing to VCC + 0.7 V and GND − 0.7 V during surges. Use Value: 1.5 pF capacitance prevents signal integrity degradation at 480 Mbps; 4 ns trr avoids data eye closure. |
Use Scenario: Preventing overvoltage damage to LVDS receiver inputs during hot-plug or cable disconnect events. IC Role / Device Role / Timing Role: Bidirectional clamping diode pair referenced to common-mode voltage rail. Use Value: Low IR (≤0.5 µA) eliminates common-mode offset shift; SOT363-3 allows placement within 2 mm of connector. |
| Logic-Level Translation Interface | RF Detector Bias Network |
Use Scenario: Isolating 3.3 V microcontroller GPIOs from 5 V peripheral buses while enabling level shifting via resistor-divider bias. IC Role / Device Role / Timing Role: Steering diode controlling current direction between voltage domains during state transitions. Use Value: 855 mV VF at 10 mA ensures predictable threshold behavior; dual-anode configuration supports bidirectional translation. |
Use Scenario: Providing temperature-stable DC bias to Schottky detector diodes in 2.4 GHz Wi-Fi front-ends. IC Role / Device Role / Timing Role: Low-leakage series diode establishing stable reference potential for detector output. Use Value: IR ≤ 30 nA at 25 V ensures <1 µV bias error; 1.5 pF Cd avoids detuning of matching network. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99S,135 | Same SOT363-3 package; trr = 4 ns (typ), but Cd = 2 pF (max) - 33% higher capacitance | Less suitable for >200 MHz signal paths due to increased capacitive loading | Select when cost sensitivity outweighs 0.5 pF capacitance penalty in sub-100 MHz designs |
| MMBD7000LT1G | SOT23-3 package; trr = 4 ns (max), Cd = 2 pF (max), but only one diode per package | Requires two devices for dual-path protection, increasing assembly cost and board area | Choose when existing SOT23 footprint reuse is mandatory and dual-diode integration is non-critical |
Compared with BAV99S,135 and MMBD7000LT1G, the BAV70S uniquely combines dual-diode functionality, 1.5 pF capacitance, and SOT363-3 miniaturization - delivering optimal signal integrity and layout efficiency for high-density USB, LVDS, and RF interface protection.
Availability
BAV70S is available at Aetrix Electronics and suitable for USB 2.0 interface protection, LVDS receiver clamping, and RF detector bias networks requiring stable component supply across production lifecycles.
Supply support for BAV70S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-performance, reliable standard products including diodes, MOSFETs, and logic ICs, serving automotive, industrial, and consumer markets.
The BAV70S belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation in high-frequency data interfaces and ESD-critical applications.
FAQ
What is the maximum continuous forward current per diode in the BAV70S?
The BAV70S supports 250 mA maximum continuous forward current per diode at Ts = 60 °C, as defined in its Absolute Maximum Ratings table. This rating assumes thermal dissipation via solder point on FR4 PCB with single-sided copper; derating applies above 60 °C ambient or with reduced copper area.
Does the BAV70S have a common cathode configuration for both diode pairs?
No - the BAV70S has two independent common-cathode groups: pins 1 and 6 form Diode 1 (A1–K1/K2), pins 2 and 6 form Diode 2 (A2–K1/K2), pins 4 and 3 form Diode 3 (A3–K3/K4), and pins 5 and 3 form Diode 4 (A4–K3/K4). Pin 6 serves only D1/D2; pin 3 serves only D3/D4.
Can the BAV70S be used in automotive applications?
No - the BAV70S is not AEC-Q200 qualified and lacks automotive-grade screening, temperature cycling validation, or extended lifetime reliability testing. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use in automotive systems voids warranty and incurs full customer liability.
What is the recommended reflow profile for the SOT363-3 package?
The BAV70S requires adherence to IPC-J-STD-020 moisture sensitivity level 1 (MSL1) profile: peak temperature 260 °C, time above 217 °C ≤ 60 seconds, ramp-up rate ≤ 3 °C/s. Footprint dimensions match Nexperia's sot363-3_fr drawing: 0.6 mm × 0.5 mm solder lands with 0.4 mm solder mask opening.
BAV70S,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAV70S,135 FAQ
1.How can I place an order for BAV70S,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70S,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70S,135 reliable?
The price and inventory of BAV70S,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70S,135 is usually 5 days.
3.What payment methods are accepted for BAV70S,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70S,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70S,135?
BAV70S,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70S,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70S,135?
For technical support, including BAV70S,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70S,135 requirements.
6.How does Aetrix verify that BAV70S,135 is sourced from the original manufacturer or authorized distributors?
All BAV70S,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70S,135 meets industry standards.
7.What is the process for return or replacement of BAV70S,135?
All BAV70S,135 units undergo pre-shipment inspection (PSI). If there is an issue with BAV70S,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70S,135 part is unused and in its original packaging.
Return procedure for BAV70S,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70S,135 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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