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Nexperia USA Inc. BAV70S-QX
- Part No.:
- BAV70S-QX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAV70S-QX.pdf
- Description:
- DIODE ARRAY GP 100V 250MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,370
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Product details
Overview
BAV70S-QX from Nexperia is a high-speed switching double diode in SOT363-3 (TSSOP6) package, configured as two independent anodes sharing a common cathode per pair (dual common-cathode configuration), with trr ≤ 4 ns, Cd ≤ 1.5 pF, and VR = 100 V - deployed in automotive signal routing and ESD-protected I/O interface stages.
For engineers reviewing the BAV70S-QX datasheet, BAV70S-QX pinout, BAV70S-QX application, or BAV70S-QX equivalent, this page delivers verified pin functions, AEC-Q101 qualification status, reverse recovery timing under defined test conditions, and automotive-grade thermal derating guidance for PCB-level integration.
Technical Context
The BAV70S-QX integrates two matched high-speed silicon switching diodes in a single 6-pin TSSOP package, with Pins 1 & 2 serving as independent anodes (D1, D2), Pins 4 & 5 as independent anodes (D3, D4), and Pins 3 & 6 as dual common cathodes (K3/K4 and K1/K2 respectively), enabling dual-channel clamping or steering without cross-talk.
Its 4 ns reverse recovery time is measured under standardized conditions (IF = 10 mA, IR = 10 mA, IR(meas) = 1 mA, RL = 100 Ω), and its 1.5 pF capacitance at 0 V reverse bias supports RF-adjacent signal path integrity up to ~200 MHz in low-voltage digital interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports 24 V automotive supply rail transient suppression with 2× safety margin |
| Reverse Recovery Time (trr) | ≤ 4 ns - enables clean switching in >100 MHz clock distribution and data line steering |
| Diode Capacitance (Cd) | ≤ 1.5 pF at 0 V - minimizes signal loading on high-speed GPIO and USB 2.0 D+/D− lines |
| Forward Voltage (VF) | 855 mV at 10 mA - ensures low conduction loss in 3.3 V logic-level clamp circuits |
| Reverse Leakage (IR) | 0.5 µA at 80 V, 25 °C - maintains signal integrity in high-impedance sensor bias networks |
| Junction Temperature (Tj) | 150 °C - validated for under-hood automotive environments per AEC-Q101 stress testing |
Pinout & Package
SOT363-3 (TSSOP6) plastic surface-mounted package: 1.3 mm × 2.2 mm footprint, 0.65 mm pitch, 1.15 mm height, FR4-compatible reflow soldering profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first clamping path; routed to protected signal line |
| 2 | Anode (Diode 2) | Input node for second independent clamping path |
| 3 | Common Cathode (Diodes 3 & 4) | Shared return path for dual-anode diode pair; connects to reference rail |
| 4 | Anode (Diode 3) | Third independent input node; enables 4-diode array functionality |
| 5 | Anode (Diode 4) | Fourth independent input node; supports multi-rail protection schemes |
| 6 | Common Cathode (Diodes 1 & 2) | Shared return for first diode pair; electrically isolated from Pin 3 |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics per stress test standard |
| 4 ns trr performance | Enables reliable operation in 100+ MHz digital bus termination and clock signal steering |
| 1.5 pF junction capacitance | Preserves edge rate integrity on 50 Ω transmission lines without added skew |
| Dual common-cathode topology | Supports two independent clamping channels with shared ground return per pair |
| 0.5 µA max IR at 80 V | Prevents leakage-induced offset in precision analog front-end bias networks |
Applications
| Automotive CAN Transceiver Protection | USB 2.0 Data Line Clamping |
|---|---|
Use Scenario: Bidirectional transient suppression on CAN_H/CAN_L lines in 12 V vehicle networks. IC Role / Device Role / Timing Role: High-speed clamping diode array limiting ESD and load-dump spikes before transceiver input stage. Use Value: 4 ns trr prevents pulse distortion during 1 Mbps CAN FD arbitration; 100 V VR withstands ISO 7637-2 Pulse 5a. |
Use Scenario: ESD protection for D+ and D− pins of USB 2.0 host/device connectors. IC Role / Device Role / Timing Role: Low-capacitance steering diode directing transients to VBUS or GND rails. Use Value: 1.5 pF Cd avoids signal integrity degradation at 480 Mbps; dual-anode layout matches differential pair geometry. |
| Industrial Sensor Signal Conditioning | Low-Voltage Logic-Level Translation |
Use Scenario: Input protection and level shifting for 3.3 V ADC inputs receiving ±10 V industrial sensor outputs. IC Role / Device Role / Timing Role: Clamp diode pair limiting overvoltage while preserving DC accuracy via low IR. Use Value: 0.5 µA IR at 25 °C prevents >1 mV offset error in 2 MΩ input impedance stages; 855 mV VF enables precise 3.3 V rail referencing. |
Use Scenario: Bidirectional voltage translation between 1.8 V and 3.3 V I²C buses in mixed-voltage SoC designs. IC Role / Device Role / Timing Role: Passive level shifter using forward-biased diode drop to shift logic thresholds. Use Value: Matched VF across diodes ensures symmetric rise/fall delay; SOT363-3 footprint aligns with dense I²C trace routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W-Q | Same SOT363-3 package; trr = 4 ns, but Cd = 2.0 pF (vs. 1.5 pF); IF(max) = 215 mA (vs. 250 mA per diode) | Higher capacitance limits use in >150 MHz interfaces; lower IF rating reduces margin in 24 V clamp current paths | Select when cost sensitivity outweighs 0.5 pF capacitance advantage and 35 mA forward current margin |
| MMBD7000-7-F | SOT23-3 package; trr = 4 ns, Cd = 2.5 pF, VR = 70 V (vs. 100 V); not AEC-Q101 qualified | Smaller footprint but lacks automotive qualification and 30 V VR headroom; unsuitable for 24 V system transients | Choose only for non-automotive consumer applications where space is critical and 70 V VR suffices |
Compared with BAV99W-Q and MMBD7000-7-F, the BAV70S-QX provides superior 100 V VR margin for 24 V automotive systems, lowest 1.5 pF capacitance among AEC-Q101-qualified SOT363-3 dual diodes, and full dual-pair pinout flexibility for multi-rail protection layouts.
Availability
BAV70S-QX is available at Aetrix Electronics and suitable for automotive ECU design, USB interface hardening, industrial sensor front-ends, and low-voltage logic translation requiring stable component supply and long-term lifecycle assurance.
Supply support for BAV70S-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and mobile markets.
The BAV70S-QX belongs to Nexperia's AEC-Q101-qualified high-speed switching diode product line, engineered specifically for robust transient suppression and signal integrity preservation in automotive signal routing and interface protection.
FAQ
Is BAV70S-QX pin-compatible with BAV99W-Q?
Yes - both use identical SOT363-3 (TSSOP6) package and share the same pin assignment: Pin 1 (A1), Pin 2 (A2), Pin 3 (K3/K4), Pin 4 (A3), Pin 5 (A4), Pin 6 (K1/K2). This allows direct PCB footprint reuse, though electrical differences (Cd, VR, IF) require schematic validation.
What is the maximum continuous forward current per diode at 60 °C ambient?
The datasheet specifies 250 mA per diode at Ts = 60 °C, where Ts is the solder point temperature. At 60 °C ambient on a standard FR4 board, derating applies: Rth(j-sp) = 255 K/W implies ~100 mA absolute max per diode to maintain Tj ≤ 150 °C, consistent with the "Per device IF = 100 mA" limit in Table 8.
Does BAV70S-QX support bidirectional ESD protection?
No - it is a unidirectional double diode array with anode-input/cathode-output polarity. For bidirectional protection, external series resistors and complementary diode placement (e.g., anode-to-rail + cathode-to-rail) are required. Its architecture is optimized for clamping to a single reference rail.
How does the dual common-cathode structure affect PCB layout?
Pins 3 and 6 are electrically isolated common cathodes - Pin 3 serves diodes 3 & 4, Pin 6 serves diodes 1 & 2. Layout must route these cathodes to separate reference nets if independent clamping rails are needed; tying them together reduces channel isolation but simplifies grounding in single-rail applications.
BAV70S-QX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAV70S-QX FAQ
1.How can I place an order for BAV70S-QX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70S-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70S-QX reliable?
The price and inventory of BAV70S-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70S-QX is usually 5 days.
3.What payment methods are accepted for BAV70S-QX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70S-QX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70S-QX?
BAV70S-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70S-QX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70S-QX?
For technical support, including BAV70S-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70S-QX requirements.
6.How does Aetrix verify that BAV70S-QX is sourced from the original manufacturer or authorized distributors?
All BAV70S-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70S-QX meets industry standards.
7.What is the process for return or replacement of BAV70S-QX?
All BAV70S-QX units undergo pre-shipment inspection (PSI). If there is an issue with BAV70S-QX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70S-QX part is unused and in its original packaging.
Return procedure for BAV70S-QX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70S-QX Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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